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Results: 1-25 | 26-32
Results: 1-25/32
Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy
Authors: Alt, HC Egorov, AY Riechert, H Wiedemann, B Meyer, JD Michelmann, RW Bethge, K
Citation: Hc. Alt et al., Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy, PHYSICA B, 302, 2001, pp. 282-290
Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs
Authors: Egorov, AY Bedarev, D Bernklau, D Dumitras, G Riechert, H
Citation: Ay. Egorov et al., Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs, PHYS ST S-B, 224(3), 2001, pp. 839-843
Fine structure of the inner electric field in semiconductor laser diodes studied by EFM
Authors: Ankudinov, A Marushchak, V Titkov, A Evtikhiev, V Kotelnikov, E Egorov, A Riechert, H Huhtinen, H Laiho, R
Citation: A. Ankudinov et al., Fine structure of the inner electric field in semiconductor laser diodes studied by EFM, PHYS LOW-D, 3-4, 2001, pp. 9-16
Profiling band structure in GaN devices by electron holography
Authors: Cherns, D Mokhtari, H Jiao, CG Averbeck, R Riechert, H
Citation: D. Cherns et al., Profiling band structure in GaN devices by electron holography, J CRYST GR, 230(3-4), 2001, pp. 410-414
Growth of high quality InGaAsN heterostructures and their laser application
Authors: Egorov, AY Bernklau, D Borchert, B Illek, S Livshits, D Rucki, A Schuster, M Kaschner, A Hoffmann, A Dumitras, G Amann, MC Riechert, H
Citation: Ay. Egorov et al., Growth of high quality InGaAsN heterostructures and their laser application, J CRYST GR, 227, 2001, pp. 545-552
Simultaneous experimental evaluation of In and N concentrations in InGaAsNquantum wells
Authors: Grillo, V Albrecht, M Remmele, T Strunk, HP Egorov, AY Riechert, H
Citation: V. Grillo et al., Simultaneous experimental evaluation of In and N concentrations in InGaAsNquantum wells, J APPL PHYS, 90(8), 2001, pp. 3792-3798
Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure
Authors: Fehse, R Sweeney, SJ Adams, AR O'Reilly, EP Egorov, AY Riechert, H Illek, S
Citation: R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93
Monolithic VCSEL with InGaAsN active region emitting at 1.28 mu m and CW output power exceeding 500 mu W at room temperature
Authors: Steinle, G Riechert, H Egorov, AY
Citation: G. Steinle et al., Monolithic VCSEL with InGaAsN active region emitting at 1.28 mu m and CW output power exceeding 500 mu W at room temperature, ELECTR LETT, 37(2), 2001, pp. 93-95
Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsN VCSELs' (vol 37, pg 632, 2001)
Authors: Steinle, G Mederer, F Kicherer, M Michalzik, R Kristen, G Egorov, AY Riechert, H Wolf, HD Ebeling, KJ
Citation: G. Steinle et al., Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsN VCSELs' (vol 37, pg 632, 2001), ELECTR LETT, 37(12), 2001, pp. 803-803
Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsNVCSELs
Authors: Steinle, G Mederer, F Kicherer, M Michalzik, R Kristen, G Egorov, AY Riechert, H Wolf, HD Ebeling, KJ
Citation: G. Steinle et al., Data transmission up to 10Gbit/s with 1.3 mu m wavelength InGaAsNVCSELs, ELECTR LETT, 37(10), 2001, pp. 632-634
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime
Authors: Hofmann, M Wagner, A Ellmers, C Schlichenmeier, C Schafer, S Hohnsdorf, F Koch, J Stolz, W Koch, SW Ruhle, WW Hader, J Moloney, JV O'Reilly, EP Borchert, B Egorov, AY Riechert, H
Citation: M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
Authors: Kaschner, A Luttgert, T Born, H Hoffmann, A Egorov, AY Riechert, H
Citation: A. Kaschner et al., Recombination mechanisms in GaInNAs/GaAs multiple quantum wells, APPL PHYS L, 78(10), 2001, pp. 1391-1393
Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Authors: Kaschner, H Holst, J von Gfug, U Hoffmann, A Bertram, F Riemann, T Rudloff, D Fischer, P Christen, J Averbeck, R Riechert, H
Citation: H. Kaschner et al., Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_592-NIL_597
Static and dynamic characteristics of 1.29-mu m GaInNAs ridge-waveguide laser diodes
Authors: Borchert, B Egorov, AY Illek, S Riechert, H
Citation: B. Borchert et al., Static and dynamic characteristics of 1.29-mu m GaInNAs ridge-waveguide laser diodes, IEEE PHOTON, 12(6), 2000, pp. 597-599
InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices
Authors: Riechert, H Egorov, AY Livshits, D Borchert, B Illek, S
Citation: H. Riechert et al., InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices, NANOTECHNOL, 11(4), 2000, pp. 201-205
Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD
Authors: Holst, J Kaschner, A Gfug, U Hoffmann, A Thomsen, C Bertram, F Riemann, T Rudloff, D Christen, J Averbeck, R Riechert, H Heuken, M Schwambera, M Schon, O
Citation: J. Holst et al., Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD, PHYS ST S-A, 180(1), 2000, pp. 327-332
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
Authors: Heying, B Averbeck, R Chen, LF Haus, E Riechert, H Speck, JS
Citation: B. Heying et al., Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy, J APPL PHYS, 88(4), 2000, pp. 1855-1860
Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 mu m
Authors: Illek, S Ultsch, A Borchert, B Egorov, AY Riechert, H
Citation: S. Illek et al., Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 mu m, ELECTR LETT, 36(8), 2000, pp. 725-726
8W continuous wave operation of InGaAsN lasers at 1.3 mu m
Authors: Livshits, DA Egorov, AY Riechert, H
Citation: Da. Livshits et al., 8W continuous wave operation of InGaAsN lasers at 1.3 mu m, ELECTR LETT, 36(16), 2000, pp. 1381-1382
Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers
Authors: Alt, HC Egorov, AY Riechert, H Wiedemann, B Meyer, JD Michelmann, RW Bethge, K
Citation: Hc. Alt et al., Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers, APPL PHYS L, 77(21), 2000, pp. 3331-3333
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
Authors: Hetterich, M Dawson, MD Egorov, AY Bernklau, D Riechert, H
Citation: M. Hetterich et al., Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content, APPL PHYS L, 76(8), 2000, pp. 1030-1032
Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations
Authors: Kaczmarczyk, G Kaschner, A Reich, S Hoffmann, A Thomsen, C As, DJ Lima, AP Schikora, D Lischka, K Averbeck, R Riechert, H
Citation: G. Kaczmarczyk et al., Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations, APPL PHYS L, 76(15), 2000, pp. 2122-2124
Radio frequency plasma nitridation of c-plane sapphire; influence on properties of GaN grown by molecular beam epitaxy
Authors: Heinlein, C Grepstad, JK Riechert, H Averbeck, R
Citation: C. Heinlein et al., Radio frequency plasma nitridation of c-plane sapphire; influence on properties of GaN grown by molecular beam epitaxy, MAT SCI E B, 58(3), 1999, pp. 270-273
X-ray standing-wave study of (AlAs)(m)(GaAs)(n) short-period superlattices
Authors: Lessmann, A Brennan, S Munkholm, A Schuster, M Riechert, H Materlik, G
Citation: A. Lessmann et al., X-ray standing-wave study of (AlAs)(m)(GaAs)(n) short-period superlattices, PHYS REV B, 59(16), 1999, pp. 10801-10810
Quantitative model for the MBE-growth of ternary nitrides
Authors: Averbeck, R Riechert, H
Citation: R. Averbeck et H. Riechert, Quantitative model for the MBE-growth of ternary nitrides, PHYS ST S-A, 176(1), 1999, pp. 301-305
Risultati: 1-25 | 26-32