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Results: 1-11 |
Results: 11
MEASUREMENT OF SINGLE INTERFACE-TRAP CAPTURE CROSS-SECTIONS WITH CHARGE-PUMPING
Authors: SAKS NS
Citation: Ns. Saks, MEASUREMENT OF SINGLE INTERFACE-TRAP CAPTURE CROSS-SECTIONS WITH CHARGE-PUMPING, Applied physics letters, 70(25), 1997, pp. 3380-3382
OXIDE, INTERFACE, AND BORDER TRAPS IN THERMAL, N2O, AND N2O-NITRIDED OXIDES
Authors: FLEETWOOD DM SAKS NS
Citation: Dm. Fleetwood et Ns. Saks, OXIDE, INTERFACE, AND BORDER TRAPS IN THERMAL, N2O, AND N2O-NITRIDED OXIDES, Journal of applied physics, 79(3), 1996, pp. 1583-1594
HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS - REPLY
Authors: WEBER W BROX M THEWES R SAKS NS
Citation: W. Weber et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS - REPLY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1474-1477
CHARACTERIZATION OF INDIVIDUAL INTERFACE TRAPS WITH CHARGE-PUMPING
Authors: SAKS NS GROESENEKEN G DEWOLF I
Citation: Ns. Saks et al., CHARACTERIZATION OF INDIVIDUAL INTERFACE TRAPS WITH CHARGE-PUMPING, Applied physics letters, 68(10), 1996, pp. 1383-1385
CHARGE-PUMPING IN THIN-FILM TRANSISTORS
Authors: SAKS NS BATRA S MANNING M
Citation: Ns. Saks et al., CHARGE-PUMPING IN THIN-FILM TRANSISTORS, Microelectronic engineering, 28(1-4), 1995, pp. 379-382
HOT-HOLE-INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS
Authors: WEBER W BROX M THEWES R SAKS NS
Citation: W. Weber et al., HOT-HOLE-INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1473-1480
NITROGEN DEPLETION DURING OXIDATION IN N2O
Authors: SAKS NS MA DI FOWLER WB
Citation: Ns. Saks et al., NITROGEN DEPLETION DURING OXIDATION IN N2O, Applied physics letters, 67(3), 1995, pp. 374-376
RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O
Authors: SAKS NS SIMONS M FLEETWOOD DM YOUNT JT LENAHAN PM KLEIN RB
Citation: Ns. Saks et al., RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O, IEEE transactions on nuclear science, 41(6), 1994, pp. 1854-1863
EFFECTS OF HYDROGEN ANNEALING AFTER CHANNEL HOT-CARRIER STRESS
Authors: SAKS NS KLEIN RB
Citation: Ns. Saks et Rb. Klein, EFFECTS OF HYDROGEN ANNEALING AFTER CHANNEL HOT-CARRIER STRESS, Microelectronic engineering, 22(1-4), 1993, pp. 265-268
COMPARISON OF INTERFACE-TRAP DENSITIES MEASURED BY THE JENQ AND CHARGE-PUMPING TECHNIQUES
Authors: SAKS NS
Citation: Ns. Saks, COMPARISON OF INTERFACE-TRAP DENSITIES MEASURED BY THE JENQ AND CHARGE-PUMPING TECHNIQUES, Journal of applied physics, 74(5), 1993, pp. 3303-3306
EFFECTS OF PAST-STRESS HYDROGEN ANNEALING ON MOS OXIDES AFTER CO-60 IRRADIATION OR FOWLER-NORDHEIM INJECTION
Authors: SAKS NS KLEIN RB STAHLBUSH RE MRSTIK BJ RENDELL RW
Citation: Ns. Saks et al., EFFECTS OF PAST-STRESS HYDROGEN ANNEALING ON MOS OXIDES AFTER CO-60 IRRADIATION OR FOWLER-NORDHEIM INJECTION, IEEE transactions on nuclear science, 40(6), 1993, pp. 1341-1349
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