ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

QUASI-2-DIMENSIONAL SIMULATION OF DUAL-GATE PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTORS

Authors: DUHAMEL F DEJAEGER JC BUTEL Y LEFEBVRE M SALMER G

Citation: F. Duhamel et al., QUASI-2-DIMENSIONAL SIMULATION OF DUAL-GATE PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTORS, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(3), 1998, pp. 256-269

BERYLLIUM ION-IMPLANTATION INTO GAAS AND PSEUDOMORPHIC ALGAAS INGAAS/GAAS HETEROSTRUCTURE/

Authors: THIERY JF FAWAZ H PESANT JC LINH NT SALMER G

Citation: Jf. Thiery et al., BERYLLIUM ION-IMPLANTATION INTO GAAS AND PSEUDOMORPHIC ALGAAS INGAAS/GAAS HETEROSTRUCTURE/, Journal of electronic materials, 26(1), 1997, pp. 16-20

1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/

Authors: DIETTE F LANGREZ D CODRON JL DELOS E THERON D SALMER G

Citation: F. Diette et al., 1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/, Electronics Letters, 32(9), 1996, pp. 848-850

APPLICATION OF IIIV-POWER DEVICES FOR DC DC POWER CONVERSION/

Authors: AJRAM S KOZLOWSKI R SALMER G

Citation: S. Ajram et al., APPLICATION OF IIIV-POWER DEVICES FOR DC DC POWER CONVERSION/, Electronics Letters, 32(1), 1996, pp. 67-68

EXTREMELY LOW-RESISTANCE AU MN/NI/AU OHMIC CONTACT TO P-GAAS/

Authors: THIERY JF FAWAZ H LEROY A SALMER G

Citation: Jf. Thiery et al., EXTREMELY LOW-RESISTANCE AU MN/NI/AU OHMIC CONTACT TO P-GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2130-2133

ACCURATE EXTRACTION OF DUAL-GATE FIELD-EFFECT-TRANSISTOR PARASITIC ELEMENTS

Authors: LANGREZ D DELOS E SALMER G

Citation: D. Langrez et al., ACCURATE EXTRACTION OF DUAL-GATE FIELD-EFFECT-TRANSISTOR PARASITIC ELEMENTS, Microwave and optical technology letters, 9(2), 1995, pp. 91-95

LT-GAAS WITH HIGH BREAKDOWN STRENGTH AT LOW-TEMPERATURE FOR POWER MISFET APPLICATIONS

Authors: LIPKA KM SPLINGART B THERON D LUO JK SALMER G THOMAS H MORGAN DV KOHN E

Citation: Km. Lipka et al., LT-GAAS WITH HIGH BREAKDOWN STRENGTH AT LOW-TEMPERATURE FOR POWER MISFET APPLICATIONS, Journal of electronic materials, 24(7), 1995, pp. 913-916

2-DIMENSIONAL HYDRODYNAMIC SIMULATION OF SUBMICROMETER DUAL-GATE MODFETS

Authors: SHERIF K REFKY A SHAWKI T ELSAYED O SALMER G

Citation: K. Sherif et al., 2-DIMENSIONAL HYDRODYNAMIC SIMULATION OF SUBMICROMETER DUAL-GATE MODFETS, Solid-state electronics, 38(4), 1995, pp. 917-929

ANALYTICAL APPROACH OF NOISE-FIGURE DEPENDENCE ON TEMPERATURE FOR MICROWAVE FET

Authors: GOBERT Y SALMER G

Citation: Y. Gobert et G. Salmer, ANALYTICAL APPROACH OF NOISE-FIGURE DEPENDENCE ON TEMPERATURE FOR MICROWAVE FET, Microwave and optical technology letters, 7(7), 1994, pp. 307-309

COMPARATIVE BEHAVIOR AND PERFORMANCES OF MESFET AND HEMT AS A FUNCTION OF TEMPERATURE

Authors: GOBERT Y SALMER G

Citation: Y. Gobert et G. Salmer, COMPARATIVE BEHAVIOR AND PERFORMANCES OF MESFET AND HEMT AS A FUNCTION OF TEMPERATURE, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 299-305

LARGE-SIGNAL ANALYSIS OF QUASI-2-D PHYSICAL MODEL OF MESFETS

Authors: GIANNINI F LEUZZI G KOPANSKI M SALMER G

Citation: F. Giannini et al., LARGE-SIGNAL ANALYSIS OF QUASI-2-D PHYSICAL MODEL OF MESFETS, Electronics Letters, 29(21), 1993, pp. 1891-1893

Risultati: 1-11 |