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Results:
1-18
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Results: 18
Authors:
SELMI L
PAVESI M
WONG HSP
ACOVIC A
SANGIORGI E
Citation: L. Selmi et al., MONITORING HOT-CARRIER DEGRADATION IN SOI MOSFETS BY HOT-CARRIER LUMINESCENCE TECHNIQUES, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1135-1139
Authors:
SELMI L
MASTRAPASQUA M
BOULIN DM
BUDE JD
PAVESI M
SANGIORGI E
PINTO MR
Citation: L. Selmi et al., VERIFICATION OF ELECTRON DISTRIBUTIONS IN SILICON BY MEANS OF HOT-CARRIER LUMINESCENCE MEASUREMENTS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 802-808
Authors:
SANGIORGI E
CURATOLO M
Citation: E. Sangiorgi et M. Curatolo, APPLICATION OF A SEQUENTIAL ANALYTICAL PROCEDURE FOR THE DETECTION OFTHE BETA-AGONIST BROMBUTEROL IN BOVINE URINE SAMPLES, Journal of chromatography B. Biomedical sciences and applications, 693(2), 1997, pp. 468-478
Authors:
SELMI L
GHETTI A
BEZ R
SANGIORGI E
Citation: L. Selmi et al., TRADE-OFFS BETWEEN TUNNELING AND HOT-CARRIER INJECTION IN SHORT-CHANNEL FLOATING-GATE MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 293-296
Authors:
FISCHER B
GHETTI A
SELMI L
BEZ R
SANGIORGI E
Citation: B. Fischer et al., BIAS AND TEMPERATURE-DEPENDENCE OF HOMOGENEOUS HOT-ELECTRON INJECTIONFROM SILICON INTO SILICON DIOXIDE AT LOW VOLTAGES, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 288-296
Authors:
FISCHER B
SELMI L
GHETTI A
SANGIORGI E
Citation: B. Fischer et al., ELECTRON INJECTION INTO THE GATE OXIDE OF MOS STRUCTURES AT LIQUID-NITROGEN TEMPERATURE - MEASUREMENT AND SIMULATION, Journal de physique. IV, 6(C3), 1996, pp. 19-24
Authors:
GURRIERI F
PRINOS P
TACKELS D
KILPATRICK MW
ALLANSON J
GENUARDI M
VUCKOV A
NANNI L
SANGIORGI E
GAROFALO G
NUNES ME
NERI G
SCHWARTZ C
TSIPOURAS P
Citation: F. Gurrieri et al., A SPLIT HAND-SPLIT FOOT (SHFM3) GENE IS LOCATED AT 10Q24-]25, American journal of medical genetics, 62(4), 1996, pp. 427-436
Authors:
ESSENI D
SELMI L
SANGIORGI E
BEZ R
RICCO B
Citation: D. Esseni et al., TEMPERATURE-DEPENDENCE OF GATE AND SUBSTRATE CURRENTS IN THE CHE CROSSOVER REGIME, IEEE electron device letters, 16(11), 1995, pp. 506-508
Authors:
SELMI L
SANGIORGI E
BEZ R
Citation: L. Selmi et al., NONLOCAL EFFECTS IN P-MOSFET SUBSTRATE HOT-HOLE INJECTION EXPERIMENTS, IEEE electron device letters, 16(10), 1995, pp. 442-444
Authors:
TSUBOI Y
FIEGNA C
SANGIORGI E
RICCO B
WADA T
KATSUMATA Y
IWAI H
Citation: Y. Tsuboi et al., MONTE-CARLO ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN BIPOLAR-DEVICESWITH AND WITHOUT AN I-LAYER, IEICE transactions on electronics, E77C(2), 1994, pp. 174-178
Authors:
ABRAMO A
BRUNETTI R
JACOBONI C
VENTURI F
SANGIORGI E
Citation: A. Abramo et al., A MULTIBAND MONTE-CARLO APPROACH TO COULOMB INTERACTION FOR DEVICE ANALYSIS, Journal of applied physics, 76(10), 1994, pp. 5786-5794
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE - REPLY, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1681-1683
Authors:
FIEGNA C
IWAI H
WADA T
SAITO M
SANGIORGI E
RICCO B
Citation: C. Fiegna et al., SCALING THE MOS-TRANSISTOR BELOW 0.1 MU-M - METHODOLOGY, DEVICE STRUCTURES, AND TECHNOLOGY REQUIREMENTS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 941-951
Authors:
PINTO MR
SANGIORGI E
BUDE J
Citation: Mr. Pinto et al., SILICON MOS TRANSCONDUCTANCE SCALING INTO THE OVERSHOOT REGIME, IEEE electron device letters, 14(8), 1993, pp. 375-378
Authors:
ABRAMO A
VENTURI F
SANGIORGI E
HIGMAN JM
RICCO B
Citation: A. Abramo et al., A NUMERICAL-METHOD TO COMPUTE ISOTROPIC BAND MODELS FROM ANISOTROPIC SEMICONDUCTOR BAND STRUCTURES, IEEE transactions on computer-aided design of integrated circuits and systems, 12(9), 1993, pp. 1327-1336
Authors:
FIEGNA C
SANGIORGI E
Citation: C. Fiegna et E. Sangiorgi, DETERMINATION OF SPACE-DEPENDENT ELECTRON-DISTRIBUTION FUNCTION BY COMBINED USE OF ENERGY AND BOLTZMANN TRANSPORT-EQUATIONS - IMPROVEMENT, EVALUATION, AND EXPLANATION - REPLY, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2369-2370
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2018-2022
Authors:
ABRAMO A
VENTURI F
SANGIORGI E
FIEGNA C
RICCO B
BRUNETTI R
QUADE W
JACOBONI C
Citation: A. Abramo et al., A MULTIBAND MODEL FOR HOLE TRANSPORT IN SILICON AT HIGH-ENERGIES, Semiconductor science and technology, 7(3B), 1992, pp. 597-600
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