AAAAAA

   
Results: 1-25 | 26-31
Results: 1-25/31
EFFECTS OF IRRADIATION TEMPERATURE ON MOS RADIATION RESPONSE
Authors: SHANEYFELT MR SCHWANK JR FLEETWOOD DM WINOKUR PS
Citation: Mr. Shaneyfelt et al., EFFECTS OF IRRADIATION TEMPERATURE ON MOS RADIATION RESPONSE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1372-1378
CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS DEVINE RAB ARCHER LB BROWN GA WALLACE RM
Citation: K. Vanheusden et al., CHEMICAL-KINETICS OF MOBILE-PROTON GENERATION AND ANNIHILATION IN SIO2 THIN-FILMS, Applied physics letters, 73(5), 1998, pp. 674-676
RADIATION-INDUCED H+ TRAPPING IN BURIED SIO2
Authors: VANHEUSDEN K SCHWANK JR WARREN WL FLEETWOOD DM DEVINE RAB
Citation: K. Vanheusden et al., RADIATION-INDUCED H+ TRAPPING IN BURIED SIO2, Microelectronic engineering, 36(1-4), 1997, pp. 241-244
ADVANTAGES AND LIMITATIONS OF SILICON-ON-INSULATOR TECHNOLOGY IN RADIATION ENVIRONMENTS
Authors: SCHWANK JR
Citation: Jr. Schwank, ADVANTAGES AND LIMITATIONS OF SILICON-ON-INSULATOR TECHNOLOGY IN RADIATION ENVIRONMENTS, Microelectronic engineering, 36(1-4), 1997, pp. 335-342
NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS
Authors: VANHEUSDEN K WARREN WL DEVINE RAB FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS LEMNIOS ZJ
Citation: K. Vanheusden et al., NONVOLATILE MEMORY DEVICE BASED ON MOBILE PROTONS IN SIO2 THIN-FILMS, Nature, 386(6625), 1997, pp. 587-589
PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/
Authors: WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR DRAPER BL WINOKUR PS KNOLL MG VANHEUSDEN K DEVINE RAB ARCHER LB WALLACE RM
Citation: Wl. Warren et al., PROTONIC NONVOLATILE FIELD-EFFECT TRANSISTOR MEMORIES IN SI SIO2/SI STRUCTURES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1789-1798
IMPACT OF AGING ON RADIATION HARDNESS
Authors: SHANEYFELT MR WINOKUR PS FLEETWOOD DM HASH GL SCHWANK JR SEXTON FW PEASE RL
Citation: Mr. Shaneyfelt et al., IMPACT OF AGING ON RADIATION HARDNESS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2040-2047
DOSE ENHANCEMENT IN A ROOM CO-60 SOURCE
Authors: SIMONS M PEASE RL FLEETWOOD DM SCHWANK JR KRZESNIAK MF
Citation: M. Simons et al., DOSE ENHANCEMENT IN A ROOM CO-60 SOURCE, IEEE transactions on nuclear science, 44(6), 1997, pp. 2052-2057
IRRADIATION RESPONSE OF MOBILE PROTONS IN BURIED SIO2-FILMS
Authors: VANHEUSDEN K DEVINE RAB SCHWANK JR FLEETWOOD DM POLCAWICH RG WARREN WL KARNA SP PUGH RD
Citation: K. Vanheusden et al., IRRADIATION RESPONSE OF MOBILE PROTONS IN BURIED SIO2-FILMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2087-2094
RADIATION EFFECTS AT LOW ELECTRIC-FIELDS IN THERMAL, SIMOX, AND BIPOLAR-BASE OXIDES
Authors: FLEETWOOD DM RIEWE LC SCHWANK JR WITCZAK SC SCHRIMPF RD
Citation: Dm. Fleetwood et al., RADIATION EFFECTS AT LOW ELECTRIC-FIELDS IN THERMAL, SIMOX, AND BIPOLAR-BASE OXIDES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2537-2546
A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS
Authors: WARREN WL VANHEUSDEN K FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., A PROPOSED MODEL FOR POSITIVE CHARGE IN SIO2 THIN-FILMS OVER-COORDINATED OXYGEN CENTERS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2617-2626
A DOSE-RATE INDEPENDENT PMOS DOSIMETER FOR SPACE APPLICATIONS
Authors: SCHWANK JR ROESKE SB BEUTLER DE MORENO DJ SHANEYFELT MR
Citation: Jr. Schwank et al., A DOSE-RATE INDEPENDENT PMOS DOSIMETER FOR SPACE APPLICATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2671-2678
EFFECTS OF RELIABILITY SCREENS ON MOS CHARGE TRAPPING
Authors: SHANEYFELT MR WINOKUR PS FLEETWOOD DM SCHWANK JR REBER RA
Citation: Mr. Shaneyfelt et al., EFFECTS OF RELIABILITY SCREENS ON MOS CHARGE TRAPPING, IEEE transactions on nuclear science, 43(3), 1996, pp. 865-872
MECHANISM FOR ANNEAL-INDUCED INTERFACIAL CHARGING IN SIO2 THIN-FILMS ON SI
Authors: WARREN WL VANHEUSDEN K SCHWANK JR FLEETWOOD DM WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., MECHANISM FOR ANNEAL-INDUCED INTERFACIAL CHARGING IN SIO2 THIN-FILMS ON SI, Applied physics letters, 68(21), 1996, pp. 2993-2995
NONUNIFORM OXIDE CHARGE AND PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/
Authors: VANHEUSDEN K WARREN WL SCHWANK JR FLEETWOOD DM SHANEYFELT MR WINOKUR PS DEVINE RAB
Citation: K. Vanheusden et al., NONUNIFORM OXIDE CHARGE AND PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2/SI STRUCTURES/, Applied physics letters, 68(15), 1996, pp. 2117-2119
BORDER TRAPS - ISSUES FOR MOS RADIATION RESPONSE AND LONG-TERM RELIABILITY
Authors: FLEETWOOD DM SHANEYFELT MR WARREN WL SCHWANK JR MEISENHEIMER TL WINOKUR PS
Citation: Dm. Fleetwood et al., BORDER TRAPS - ISSUES FOR MOS RADIATION RESPONSE AND LONG-TERM RELIABILITY, Microelectronics and reliability, 35(3), 1995, pp. 403-428
CHARGE COLLECTION IN GAAS-MESFETS FABRICATED IN SEMIINSULATING SUBSTRATES
Authors: SCHWANK JR SEXTON FW WEATHERFORD TR MCMORROW D KNUDSON AR MELINGER JS
Citation: Jr. Schwank et al., CHARGE COLLECTION IN GAAS-MESFETS FABRICATED IN SEMIINSULATING SUBSTRATES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1585-1591
EFFECTS OF INTERFACE TRAPS AND BORDER TRAPS ON MOS POSTIRRADIATION ANNEALING RESPONSE
Authors: FLEETWOOD DM WARREN WL SCHWANK JR WINOKUR PS SHANEYFELT MR RIEWE LC
Citation: Dm. Fleetwood et al., EFFECTS OF INTERFACE TRAPS AND BORDER TRAPS ON MOS POSTIRRADIATION ANNEALING RESPONSE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1698-1707
MICROSCOPIC NATURE OF BORDER TRAPS IN MOS OXIDES
Authors: WARREN WL SHANEYFELT MR FLEETWOOD DM SCHWANK JR WINOKUR PS DEVINE RAB
Citation: Wl. Warren et al., MICROSCOPIC NATURE OF BORDER TRAPS IN MOS OXIDES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1817-1827
PROTON IRRADIATION EFFECTS ON ADVANCED DIGITAL AND MICROWAVE III-V COMPONENTS
Authors: HASH GL SCHWANK JR SHANEYFELT MR SANDOVAL CE CONNORS MP SHERIDAN TJ SEXTON FW SLAYTON EM HEISE JA FOSTER CC
Citation: Gl. Hash et al., PROTON IRRADIATION EFFECTS ON ADVANCED DIGITAL AND MICROWAVE III-V COMPONENTS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2259-2266
EFFECTS OF BURN-IN ON RADIATION HARDNESS
Authors: SHANEYFELT MR FLEETWOOD DM SCHWANK JR MEISENHEIMER TL WINOKUR PS
Citation: Mr. Shaneyfelt et al., EFFECTS OF BURN-IN ON RADIATION HARDNESS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2550-2559
SHALLOW OXYGEN-RELATED DONORS IN BONDED AND ETCHBACK SILICON-ON-INSULATOR STRUCTURES
Authors: WARREN WL FLEETWOOD DM SCHWANK JR SHANEYFELT MR WINOKUR PS DEVINE RAB MASZARA WP
Citation: Wl. Warren et al., SHALLOW OXYGEN-RELATED DONORS IN BONDED AND ETCHBACK SILICON-ON-INSULATOR STRUCTURES, Applied physics letters, 64(4), 1994, pp. 508-510
LINKS BETWEEN OXIDE, INTERFACE, AND BORDER TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2 SYSTEMS
Authors: WARREN WL FLEETWOOD DM SHANEYFELT MR SCHWANK JR WINOKUR PS DEVINE RAB MATHIOT D
Citation: Wl. Warren et al., LINKS BETWEEN OXIDE, INTERFACE, AND BORDER TRAPS IN HIGH-TEMPERATURE ANNEALED SI SIO2 SYSTEMS, Applied physics letters, 64(25), 1994, pp. 3452-3454
ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: FLEETWOOD DM SHANEYFELT MR SCHWANK JR
Citation: Dm. Fleetwood et al., ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 64(15), 1994, pp. 1965-1967
RADIATION-INDUCED DEFECT CENTERS IN BONDED AND ETCHBACK SOI MATERIALS
Authors: WARREN WL SCHWANK JR SHANEYFELT MR FLEETWOOD DM WINOKUR PS MASZARA WP MCKITTERICK LB
Citation: Wl. Warren et al., RADIATION-INDUCED DEFECT CENTERS IN BONDED AND ETCHBACK SOI MATERIALS, Microelectronic engineering, 22(1-4), 1993, pp. 387-390
Risultati: 1-25 | 26-31