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Results: 1-19 |
Results: 19
MANY-BODY EFFECTS IN HIGHLY ACCEPTOR-DOPED GAAS ALXGA1-XAS QUANTUM-WELLS/
Authors: HOLTZ PO FERREIRA AC SERNELIUS BE BUYANOV A MONEMAR B MAURITZ O EKENBERG U SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Po. Holtz et al., MANY-BODY EFFECTS IN HIGHLY ACCEPTOR-DOPED GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4624-4628
INFLUENCE OF POTENTIAL FLUCTUATIONS ON ELECTRICAL-TRANSPORT AND OPTICAL-PROPERTIES IN MODULATION-DOPED GAN AL0.28GA0.72N HETEROSTRUCTURES/
Authors: BUYANOV AV BERGMAN JP SANDBERG JA SERNELIUS BE HOLTZ PO MONEMAR B AMANO H AKASAKI I
Citation: Av. Buyanov et al., INFLUENCE OF POTENTIAL FLUCTUATIONS ON ELECTRICAL-TRANSPORT AND OPTICAL-PROPERTIES IN MODULATION-DOPED GAN AL0.28GA0.72N HETEROSTRUCTURES/, Physical review. B, Condensed matter, 58(3), 1998, pp. 1442-1450
INTERACTION ENERGY FOR A PAIR OF QUANTUM-WELLS
Authors: SERNELIUS BE BJORK P
Citation: Be. Sernelius et P. Bjork, INTERACTION ENERGY FOR A PAIR OF QUANTUM-WELLS, Physical review. B, Condensed matter, 57(11), 1998, pp. 6592-6601
PHOTOCONDUCTIVITY IN N-TYPE MODULATION-DOPED GAN ALGAN HETEROSTRUCTURES/
Authors: BUYANOV AV BERGMAN JP SANDBERG JA SERNELIUS BE HOLTZ PO DALFORS J MONEMAR B AMANO H AKASAKI I
Citation: Av. Buyanov et al., PHOTOCONDUCTIVITY IN N-TYPE MODULATION-DOPED GAN ALGAN HETEROSTRUCTURES/, Journal of crystal growth, 190, 1998, pp. 753-757
WEAKLY LOCALIZED TRANSPORT IN MODULATION-DOPED GAN ALGAN HETEROSTRUCTURES/
Authors: BUYANOV AV SANDBERG JA SERNELIUS BE HOLTZ PO BERGMAN JP MONEMAR B AMANO H AKASAKI I
Citation: Av. Buyanov et al., WEAKLY LOCALIZED TRANSPORT IN MODULATION-DOPED GAN ALGAN HETEROSTRUCTURES/, Journal of crystal growth, 190, 1998, pp. 758-762
METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH
Authors: ABRAMOF E DASILVA AF SERNELIUS BE DESOUZA JP BOUDINOV H
Citation: E. Abramof et al., METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH, Journal of materials research, 12(3), 1997, pp. 641-645
IMPURITY RESISTIVITY IN DOUBLY DELTA-DOPED SYSTEMS
Authors: SODERSTROM E SERNELIUS BE
Citation: E. Soderstrom et Be. Sernelius, IMPURITY RESISTIVITY IN DOUBLY DELTA-DOPED SYSTEMS, Physica scripta. T, T69, 1997, pp. 286-289
TRANSPORT-PROPERTIES OF SILICON IMPLANTED WITH BISMUTH
Authors: ABRAMOF E DASILVA AF SERNELIUS BE DESOUZA JP BOUDINOV H
Citation: E. Abramof et al., TRANSPORT-PROPERTIES OF SILICON IMPLANTED WITH BISMUTH, Physical review. B, Condensed matter, 55(15), 1997, pp. 9584-9589
PLASMON SHAKE-UP EFFECTS IN QUANTUM-WELL EXCITON SPECTRA
Authors: SERNELIUS BE SODERSTROM E
Citation: Be. Sernelius et E. Soderstrom, PLASMON SHAKE-UP EFFECTS IN QUANTUM-WELL EXCITON SPECTRA, Journal of physics. Condensed matter, 8(46), 1996, pp. 9071-9081
CURRENT DRAG IN A SINGLE-QUANTUM-WELL
Authors: SODERSTROM E BUYANOV AV SERNELIUS BE
Citation: E. Soderstrom et al., CURRENT DRAG IN A SINGLE-QUANTUM-WELL, Journal of physics. Condensed matter, 8(20), 1996, pp. 3705-3714
EXCITON PROPERTIES IN P-TYPE GAAS ALXGA1-XAS QUANTUM-WELLS IN THE HIGH DOPING REGIME/
Authors: FERREIRA AC HOLTZ PO SERNELIUS BE BUYANOVA I MONEMAR B MAURITZ O EKENBERG U SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Ac. Ferreira et al., EXCITON PROPERTIES IN P-TYPE GAAS ALXGA1-XAS QUANTUM-WELLS IN THE HIGH DOPING REGIME/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16989-16993
EXCITATION-INDUCED OPTICAL SWITCHING IN TRANSPARENT COATINGS
Authors: SERNELIUS BE
Citation: Be. Sernelius, EXCITATION-INDUCED OPTICAL SWITCHING IN TRANSPARENT COATINGS, Thin solid films, 278(1-2), 1996, pp. 104-107
OPTICAL AND TRANSPORT STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/
Authors: FERREIRA AC BUYANOV AV HOLTZ PO SERNELIUS BE MONEMAR B MAURITZ O EKENBERG U SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Ac. Ferreira et al., OPTICAL AND TRANSPORT STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/, Surface science, 362(1-3), 1996, pp. 420-423
OPTICAL STUDIES OF ACCEPTOR CENTER DOPED GAAS ALGAAS QUANTUM-WELLS/
Authors: FERREIRA AC HOLTZ PO SERNELIUS BE BUYANOV A MONEMAR B EKENBERG U MAURITZ O SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Ac. Ferreira et al., OPTICAL STUDIES OF ACCEPTOR CENTER DOPED GAAS ALGAAS QUANTUM-WELLS/, Solid-state electronics, 40(1-8), 1996, pp. 89-92
ELECTRICAL-RESISTIVITY OF BISMUTH IMPLANTED INTO SILICON
Authors: DASILVA AF SERNELIUS BE DESOUZA JP BOUDINOV H
Citation: Af. Dasilva et al., ELECTRICAL-RESISTIVITY OF BISMUTH IMPLANTED INTO SILICON, Journal of applied physics, 79(7), 1996, pp. 3453-3455
SPECTROSCOPY STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/
Authors: FERREIRA AC HOLTZ PO SERNELIUS BE BUYANOV A MONEMAR B MAURITZ O EKENBERG U SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation: Ac. Ferreira et al., SPECTROSCOPY STUDIES OF HIGHLY ACCEPTOR-DOPED GAAS ALGAAS QUANTUM-WELLS/, Superlattices and microstructures, 18(2), 1995, pp. 153-159
ELECTRON MEAN FREE-PATH IN BE METAL
Authors: JOHANSSON LI SERNELIUS BE
Citation: Li. Johansson et Be. Sernelius, ELECTRON MEAN FREE-PATH IN BE METAL, Physical review. B, Condensed matter, 50(23), 1994, pp. 16817-16823
ELECTRON-MOBILITY ENHANCEMENT IN SI USING DOUBLY DELTA-DOPED LAYERS
Authors: RADAMSON HH SARDELA MR NUR O WILLANDER M SERNELIUS BE NI WX HANSSON GV
Citation: Hh. Radamson et al., ELECTRON-MOBILITY ENHANCEMENT IN SI USING DOUBLY DELTA-DOPED LAYERS, Applied physics letters, 64(14), 1994, pp. 1842-1844
FREE-POLARON ABSORPTION
Authors: SERNELIUS BE
Citation: Be. Sernelius, FREE-POLARON ABSORPTION, Physical review. B, Condensed matter, 48(10), 1993, pp. 7043-7049
Risultati: 1-19 |