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Results: 1-25/69
Authors:
GASKA R
OSINSKY A
YANG JW
SHUR MS
Citation: R. Gaska et al., SELF-HEATING IN HIGH-POWER ALGAN-GAN HFETS, IEEE electron device letters, 19(3), 1998, pp. 89-91
HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/
Authors:
CHEN Q
YANG JW
GASKA R
KHAN MA
SHUR MS
SULLIVAN GJ
SAILOR AL
HIGGINGS JA
PING AT
ADESIDA I
Citation: Q. Chen et al., HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, IEEE electron device letters, 19(2), 1998, pp. 44-46
Authors:
LU JQ
SHUR MS
HESLER JL
SUN LQ
WEIKLE R
Citation: Jq. Lu et al., TERAHERTZ DETECTOR UTILIZING 2-DIMENSIONAL ELECTRONIC FLUID, IEEE electron device letters, 19(10), 1998, pp. 373-375
Authors:
CHEREMISIN MV
DYAKONOV MI
SHUR MS
SAMSONIDZE G
Citation: Mv. Cheremisin et al., INFLUENCE OF ELECTRON-SCATTERING ON CURRENT INSTABILITY IN-FIELD EFFECT TRANSISTORS, Solid-state electronics, 42(9), 1998, pp. 1737-1742
Authors:
OLEARY SK
FOUTZ BE
SHUR MS
BHAPKAR UV
EASTMAN LF
Citation: Sk. Oleary et al., MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN WURTZITE ALUMINUM NITRIDE, Solid state communications, 105(10), 1998, pp. 621-626
Authors:
DYAKONOV M
SHUR MS
Citation: M. Dyakonov et Ms. Shur, CONSEQUENCES OF SPACE DEPENDENCE OF EFFECTIVE-MASS IN HETEROSTRUCTURES, Journal of applied physics, 84(7), 1998, pp. 3726-3730
Authors:
OLEARY SK
FOUTZ BE
SHUR MS
BHAPKAR UV
EASTMAN LF
Citation: Sk. Oleary et al., ELECTRON-TRANSPORT IN WURTZITE INDIUM NITRIDE, Journal of applied physics, 83(2), 1998, pp. 826-829
Authors:
HURT MJ
MENEGHESSO G
ZANONI E
PEATMAN WCB
TSAI R
SHUR MS
Citation: Mj. Hurt et al., BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1843-1845
Authors:
SLADE HC
SHUR MS
Citation: Hc. Slade et Ms. Shur, ANALYSIS OF BIAS STRESS ON UNPASSIVATED HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1548-1553
Authors:
MARTINEZ EJ
SHUR MS
SCHUERMEYER FL
Citation: Ej. Martinez et al., GATE CURRENT MODEL FOR THE HOT-ELECTRON REGIME OF OPERATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2108-2115
Authors:
MARTINEZ EJ
SHUR MS
SCHUERMEYER FL
Citation: Ej. Martinez et al., ANALYTICAL GATE CURRENT MODEL FOR N-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2116-2121
Authors:
OSINSKY A
SHUR MS
GASKA R
CHEN Q
Citation: A. Osinsky et al., AVALANCHE BREAKDOWN AND BREAKDOWN LUMINESCENCE IN P-PI-N GAN DIODES, Electronics Letters, 34(7), 1998, pp. 691-692
Authors:
DYAKONOVA N
DICKENS A
SHUR MS
GASKA R
Citation: N. Dyakonova et al., IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS ON SAPPHIRE SUBSTRATES, Electronics Letters, 34(17), 1998, pp. 1699-1700
Authors:
LEVINSHTEIN ME
RUMYANTSEV SL
GASKA R
YANG JW
SHUR MS
Citation: Me. Levinshtein et al., ALGAN GAN HIGH-ELECTRON-MOBILITY FIELD-EFFECT TRANSISTORS WITH LOW 1/F NOISE/, Applied physics letters, 73(8), 1998, pp. 1089-1091
Authors:
GASKA R
YANG JW
OSINSKY A
CHEN Q
KHAN MA
ORLOV AO
SNIDER GL
SHUR MS
Citation: R. Gaska et al., ELECTRON-TRANSPORT IN ALGAN-GAN HETEROSTRUCTURES GROWN ON 6H-SIC SUBSTRATES, Applied physics letters, 72(6), 1998, pp. 707-709
Authors:
LEVINSHTEIN ME
PASCAL F
CONTRERAS S
KNAP W
RUMYANTSEV SL
GASKA R
YANG JW
SHUR MS
Citation: Me. Levinshtein et al., LOW-FREQUENCY NOISE IN GAN GAALN HETEROJUNCTIONS/, Applied physics letters, 72(23), 1998, pp. 3053-3055
Authors:
DYAKONOVA N
DICKENS A
SHUR MS
GASKA R
YANG JW
Citation: N. Dyakonova et al., TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Applied physics letters, 72(20), 1998, pp. 2562-2564
Authors:
GASKA R
YANG JW
BYKHOVSKI AD
SHUR MS
KAMINSKI VV
SOLOVIOV SM
Citation: R. Gaska et al., THE INFLUENCE OF THE DEFORMATION ON THE 2-DIMENSIONAL ELECTRON-GAS DENSITY IN GAN-ALGAN HETEROSTRUCTURES, Applied physics letters, 72(1), 1998, pp. 64-66
Authors:
KHAN MA
SHUR MS
Citation: Ma. Khan et Ms. Shur, GAN BASED TRANSISTORS FOR HIGH-TEMPERATURE APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 69-73
Authors:
KHAN MA
CHEN Q
YANG J
SUN CJ
LIM B
TEMKIN H
SCHETZINA J
SHUR MS
Citation: Ma. Khan et al., UV, BLUE AND GREEN LIGHT-EMITTING-DIODES BASED ON GAN-INGAN MULTIPLE-QUANTUM WELLS OVER SAPPHIRE AND (111)-SPINEL SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 265-268
Authors:
SHUR MS
KHAN MA
Citation: Ms. Shur et Ma. Khan, GAN ALGAN HETEROSTRUCTURE DEVICES - PHOTODETECTORS AND FIELD-EFFECT TRANSISTORS/, MRS bulletin, 22(2), 1997, pp. 44-50
Authors:
BURM J
CHU K
SCHAFF WJ
EASTMAN LF
KHAN MA
CHEN QH
YANG JW
SHUR MS
Citation: J. Burm et al., 0.12-MU-M GATE III-V NITRIDE HFETS WITH HIGH CONTACT RESISTANCES, IEEE electron device letters, 18(4), 1997, pp. 141-143
Authors:
GASKA R
CHEN Q
YANG J
OSINSKY A
KHAN MA
SHUR MS
Citation: R. Gaska et al., HIGH-TEMPERATURE PERFORMANCE OF ALGAN GAN HFETS ON SIC SUBSTRATES/, IEEE electron device letters, 18(10), 1997, pp. 492-494
Authors:
FJELDLY TA
SHUR MS
YTTERDAL T
Citation: Ta. Fjeldly et al., FIELD-EFFECT TRANSISTOR MODELING ISSUES, Physica scripta. T, T69, 1997, pp. 30-39
Authors:
SHUR MS
KHAN MA
Citation: Ms. Shur et Ma. Khan, ALGAN GAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Physica scripta. T, T69, 1997, pp. 103-107