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Results: 76-84/84
Authors:
SIMOEN E
MAGNUSSON U
VERMEIREN J
CLAEYS C
Citation: E. Simoen et al., BACK-GATE INDUCED RANDOM TELEGRAPH SIGNAL-NOISE IN FULLY-DEPLETED SILICON-ON-INSULATOR NMOSFETS, Solid-state electronics, 36(11), 1993, pp. 1593-1596
Authors:
ROTONDARO ALP
MAGNUSSON U
SIMOEN E
CLAEYS C
Citation: Alp. Rotondaro et al., A CONSISTENT EXPERIMENTAL-METHOD FOR THE EXTRACTION OF THE THRESHOLD VOLTAGE OF SOI NMOSFETS FROM ROOM DOWN TO CRYOGENIC TEMPERATURES, Solid-state electronics, 36(10), 1993, pp. 1465-1468
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, GATE-LENGTH DEPENDENCE OF THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED SOI N-MOSFETS, Solid state communications, 88(7), 1993, pp. 507-508
Authors:
DIERICKX B
WOUTERS D
WILLEMS G
ALAERTS A
DEBUSSCHERE I
SIMOEN E
VLUMMENS J
AKIMOTO H
CLAEYS C
MAES H
HERMANS L
HEIJNE EHM
JARRON P
ANGHINOLFI F
CAMPBELL M
PENGG FX
ASPELL P
BOSISIO L
FOCARDI E
FORTI F
KASHIGIN S
MEKKAOUI A
HABRARD MC
SAUVAGE D
DELPIERRE P
Citation: B. Dierickx et al., INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS, IEEE transactions on nuclear science, 40(4), 1993, pp. 753-758
Authors:
SIMOEN E
DIERICKX B
CLAEYS CL
Citation: E. Simoen et al., LOW-FREQUENCY NOISE BEHAVIOR OF SI NMOSTS STRESSED AT 4.2 K, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1296-1299
Authors:
SIMOEN E
MAGNUSSON U
CLAEYS C
Citation: E. Simoen et al., A LOW-FREQUENCY NOISE STUDY OF GATE-ALL-AROUND SOI TRANSISTORS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2054-2059
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, LOW-FREQUENCY NOISE BEHAVIOR OF GAMMA-IRRADIATED PARTIALLY DEPLETED SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 63(12), 1993, pp. 1672-1674
Authors:
DIERICKX B
SIMOEN E
DECLERCK G
Citation: B. Dierickx et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .1. THEORY, Semiconductor science and technology, 6(9), 1991, pp. 896-904
Authors:
SIMOEN E
DIERICKX B
CLAEYS C
DECLERCK G
Citation: E. Simoen et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR, Semiconductor science and technology, 6(9), 1991, pp. 905-911