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Results: 51-71/71
Authors:
BRAUER G
ANWAND W
COLEMAN PG
KNIGHTS AP
PLAZAOLA F
PACAUD Y
SKORUPA W
STORMER J
WILLUTZKI P
Citation: G. Brauer et al., POSITRON STUDIES OF DEFECTS IN ION-IMPLANTED SIC, Physical review. B, Condensed matter, 54(5), 1996, pp. 3084-3092
Authors:
FUKAREK W
YANKOV RA
SKORUPA W
Citation: W. Fukarek et al., COMPARATIVE-STUDY OF SIMOX STRUCTURES USING 4 ANALYTICAL TECHNIQUES, Surface and interface analysis, 24(4), 1996, pp. 243-251
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
SKORUPA W
Citation: N. Hatzopoulos et al., FORMATION AND CHARACTERIZATION OF SI SIO2 MULTILAYER STRUCTURES BY OXYGEN-ION IMPLANTATION INTO SILICON/, Journal of applied physics, 80(9), 1996, pp. 4960-4970
Authors:
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
PACAUD Y
KOGLER R
HEERA V
SKORUPA W
Citation: C. Serre et al., ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION, Journal of applied physics, 79(9), 1996, pp. 6907-6913
Authors:
SKORUPA W
YANKOV RA
TYSCHENKO IE
FROB H
BOHME T
LEO K
Citation: W. Skorupa et al., ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 68(17), 1996, pp. 2410-2412
Authors:
HATZOPOULOS N
PANKNIN D
FUKAREK W
SKORUPA W
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF DOUBLE SIMOX STRUCTURES FORMED BY SEQUENTIAL HIGH-ENERGY OXYGEN IMPLANTATION INTO SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 415-418
Authors:
KATSIDIS CC
SIAPKAS DI
PANKNIN D
HATZOPOULOS N
SKORUPA W
Citation: Cc. Katsidis et al., OPTICAL CHARACTERIZATION OF DOPED SIMOX STRUCTURES USING FTIR SPECTROSCOPY, Microelectronic engineering, 28(1-4), 1995, pp. 439-442
Authors:
HEERA V
HENKEL T
KOGLER R
SKORUPA W
Citation: V. Heera et al., EVIDENCE FOR DIFFUSION-LIMITED KINETICS OF ION-BEAM-INDUCED EPITAXIALCRYSTALLIZATION IN SILICON, Physical review. B, Condensed matter, 52(22), 1995, pp. 15776-15784
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: C. Serre et al., SPECTROSCOPIC CHARACTERIZATION OF PHASES FORMED BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Journal of applied physics, 77(7), 1995, pp. 2978-2984
Authors:
HEERA V
STOEMENOS J
KOGLER R
SKORUPA W
Citation: V. Heera et al., AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION, Journal of applied physics, 77(7), 1995, pp. 2999-3009
Authors:
SKORUPA W
HATZOPOULOS N
YANKOV RA
DANILIN AB
Citation: W. Skorupa et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES, Applied physics letters, 67(20), 1995, pp. 2992-2994
Authors:
HEERA V
KOGLER R
SKORUPA W
STOEMENOS J
Citation: V. Heera et al., COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY IONIRRADIATION, Applied physics letters, 67(14), 1995, pp. 1999-2001
Authors:
BISCHOFF L
TEICHERT J
HESSE E
PANKNIN D
SKORUPA W
Citation: L. Bischoff et al., COSI2 MICROSTRUCTURES BY MEANS OF A HIGH-CURRENT FOCUSED ION-BEAM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3523-3527
Authors:
REISS S
WEBER R
HEINIG KH
SKORUPA W
Citation: S. Reiss et al., EXPERIMENTAL-STUDY AND MODELING OF STRUCTURE FORMATION IN BURIED LAYERS AT ION-BEAM SYNTHESIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 337-341
Authors:
KOGLER R
VONBORANY J
PANKNIN D
SKORUPA W
Citation: R. Kogler et al., ELECTRICAL EFFECTS OF RESIDUAL DEFECTS IN SI AFTER HIGH-ENERGY IMPLANTATION OF GE+ IONS AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 350-353
Authors:
PANKNIN D
EICHORN F
WIESER E
SKORUPA W
HENRION W
ALBRECHT J
Citation: D. Panknin et al., ELECTRICAL AND OPTICAL-PROPERTIES OF BETA-FESI2 AFTER CO IMPLANTATIONAND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 172-175
Authors:
WEBER R
MULLER R
SKORUPA W
Citation: R. Weber et al., PRECIPITATION STUDIES IN OXYGEN-RICH AND NITROGEN-RICH SILICON FORMEDBY HIGH-DOSE IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 286-290
Authors:
BISCHOFF L
HESSE E
PANKNIN D
SKORUPA W
TEICHERT J
Citation: L. Bischoff et al., WRITING IMPLANTATION WITH A HIGH-CURRENT DENSITY FOCUSED ION-BEAM, Microelectronic engineering, 23(1-4), 1994, pp. 115-118
Authors:
WIESER E
PANKNIN D
SKORUPA W
QUERNER G
HENRION W
ALBRECHT J
Citation: E. Wieser et al., ION-BEAM SYNTHESIS OF TERNARY (FE1-XCOX)SI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 867-871
Authors:
HEERA V
KOGLER R
SKORUPA W
GROTZSCHEL R
Citation: V. Heera et al., DOSE-RATE DEPENDENCE OF THE ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 538-542
Authors:
KOGLER R
HEERA V
SKORUPA W
GLASER E
BACHMANN T
RUCK D
Citation: R. Kogler et al., REDUCED REVERSE TEMPERATURE OF ION-BEAM-INDUCED AMORPHIZATION CRYSTALLIZATION FOR INTERMITTENT BEAM IRRADIATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 556-558