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Results: 1-13 |
Results: 13
SIGE POWER HBTS FOR LOW-VOLTAGE, HIGH-PERFORMANCE RF APPLICATIONS
Authors: BURGHARTZ JN PLOUCHART JO JENKINS KA WEBSTER CS SOYUER M
Citation: Jn. Burghartz et al., SIGE POWER HBTS FOR LOW-VOLTAGE, HIGH-PERFORMANCE RF APPLICATIONS, IEEE electron device letters, 19(4), 1998, pp. 103-105
INTEGRATED RF COMPONENTS IN A SIGE BIPOLAR TECHNOLOGY
Authors: BURGHARTZ JN SOYUER M JENKINS KA KIES M DOLAN M STEIN KJ MALINOWSKI J HARAME DL
Citation: Jn. Burghartz et al., INTEGRATED RF COMPONENTS IN A SIGE BIPOLAR TECHNOLOGY, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1440-1445
AN 11-GHZ 3-V SIGE VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR
Authors: SOYUER M BURGHARTZ JN AINSPAN HA JENKINS KA XIAO P SHAHANI AR DOLAN MS HARAME DL
Citation: M. Soyuer et al., AN 11-GHZ 3-V SIGE VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1451-1454
MULTILEVEL-SPIRAL INDUCTORS USING VLSI INTERCONNECT TECHNOLOGY
Authors: BURGHARTZ JN JENKINS KA SOYUER M
Citation: Jn. Burghartz et al., MULTILEVEL-SPIRAL INDUCTORS USING VLSI INTERCONNECT TECHNOLOGY, IEEE electron device letters, 17(9), 1996, pp. 428-430
MICROWAVE INDUCTORS AND CAPACITORS IN STANDARD MULTILEVEL INTERCONNECT SILICON TECHNOLOGY
Authors: BURGHARTZ JN SOYUER M JENKINS KA
Citation: Jn. Burghartz et al., MICROWAVE INDUCTORS AND CAPACITORS IN STANDARD MULTILEVEL INTERCONNECT SILICON TECHNOLOGY, IEEE transactions on microwave theory and techniques, 44(1), 1996, pp. 100-104
INTEGRATED RF AND MICROWAVE COMPONENTS IN BICMOS TECHNOLOGY
Authors: BURGHARTZ JN SOYUER M JENKINS KA
Citation: Jn. Burghartz et al., INTEGRATED RF AND MICROWAVE COMPONENTS IN BICMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1559-1570
A 2.4-GHZ SILICON BIPOLAR OSCILLATOR WITH INTEGRATED RESONATOR
Authors: SOYUER M JENKINS KA BURGHARTZ JN AINSPAN HA CANORA FJ PONNAPALLI S EWEN JF PENCE WE
Citation: M. Soyuer et al., A 2.4-GHZ SILICON BIPOLAR OSCILLATOR WITH INTEGRATED RESONATOR, IEEE journal of solid-state circuits, 31(2), 1996, pp. 268-270
SINGLE-CHIP 4X500-MBD CMOS TRANSCEIVER
Authors: WIDMER AX WRENNER K AINSPAN HA PARKER B AUSTRUY P BREZZO B HAEN AM EWEN JF SOYUER M BLANC A ABBIATE JC DEUTSCH A SHIN HJ
Citation: Ax. Widmer et al., SINGLE-CHIP 4X500-MBD CMOS TRANSCEIVER, IEEE journal of solid-state circuits, 31(12), 1996, pp. 2004-2014
A 3-V 4-GHZ NMOS VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR
Authors: SOYUER M JENKINS KA BURGHARTZ JN HULVEY MD
Citation: M. Soyuer et al., A 3-V 4-GHZ NMOS VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR, IEEE journal of solid-state circuits, 31(12), 1996, pp. 2042-2045
SI-GE HETEROJUNCTION BIPOLAR TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS
Authors: AHLGREN DC GILBERT M JENG SJ MALINOWSKI J NGUYENNGOC D SCHONENBERG K STEIN K SUNDERLAND D SOYUER M MEYERSON B HARAME D
Citation: Dc. Ahlgren et al., SI-GE HETEROJUNCTION BIPOLAR TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS, Canadian journal of physics, 74, 1996, pp. 159-166
CMOS CIRCUITS FOR GB S SERIAL DATA COMMUNICATION/
Authors: EWEN JF SOYUER M WIDMER AX WRENNER KR PARKER BD AINSPAN HA
Citation: Jf. Ewen et al., CMOS CIRCUITS FOR GB S SERIAL DATA COMMUNICATION/, IBM journal of research and development, 39(1-2), 1995, pp. 73-81
MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY
Authors: SOYUER M BURGHARTZ JN JENKINS KA PONNAPALLI S EWEN JF PENCE WE
Citation: M. Soyuer et al., MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY, Electronics Letters, 31(5), 1995, pp. 359-360
A MONOLITHIC 2.3-GB S 100-MW CLOCK AND DATA RECOVERY CIRCUIT IN SILICON BIPOLAR TECHNOLOGY/
Authors: SOYUER M
Citation: M. Soyuer, A MONOLITHIC 2.3-GB S 100-MW CLOCK AND DATA RECOVERY CIRCUIT IN SILICON BIPOLAR TECHNOLOGY/, IEEE journal of solid-state circuits, 28(12), 1993, pp. 1310-1313
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