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Results: 1-25/100
Authors:
DEGER C
BORN E
ANGERER H
AMBACHER O
STUTZMANN M
HORNSTEINER J
RIHA E
FISCHERAUER G
Citation: C. Deger et al., SOUND-VELOCITY OF ALXGA1-XN THIN-FILMS OBTAINED BY SURFACE-ACOUSTIC-WAVE MEASUREMENTS, Applied physics letters, 72(19), 1998, pp. 2400-2402
Authors:
AMBACHER O
FREUDENBERG F
DIMITROV R
ANGERER H
STUTZMANN M
Citation: O. Ambacher et al., NITROGEN EFFUSION AND SELF-DIFFUSION IN (GAN)-N-14 (GAN)-N-15 ISOTOPEHETEROSTRUCTURES/, JPN J A P 1, 37(5A), 1998, pp. 2416-2421
Authors:
AMBACHER O
BRUNNER D
DIMITROV R
STUTZMANN M
SOHMER A
SCHOLZ F
Citation: O. Ambacher et al., ABSORPTION OF INGAN SINGLE QUANTUM-WELLS DETERMINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, JPN J A P 1, 37(3A), 1998, pp. 745-752
Authors:
KAISER S
PREIS H
GEBHARDT W
AMBACHER O
ANGERER H
STUTZMANN M
ROSENAUER A
GERTHSEN D
Citation: S. Kaiser et al., QUANTITATIVE TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE RELAXATION BY MISFIT DISLOCATIONS CONFINED AT THE INTERFACE OF GAN AL2O3(0001)/, JPN J A P 1, 37(1), 1998, pp. 84-89
Authors:
METZGER T
HOPLER R
BORN E
AMBACHER O
STUTZMANN M
STOMMER R
SCHUSTER M
GOBEL H
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
Citation: T. Metzger et al., DEFECT STRUCTURE OF EPITAXIAL GAN FILMS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY AND TRIPLE-AXIS X-RAY-DIFFRACTOMETRY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(4), 1998, pp. 1013-1025
Authors:
EYCKELER M
MONCH W
KAMPEN TU
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: M. Eyckeler et al., NEGATIVE ELECTRON-AFFINITY OF CESIATED P-GAN(0001) SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2224-2228
Authors:
ROHRER E
NEBEL CE
STUTZMANN M
FLOTER A
ZACHAI R
JIANG X
KLAGES CP
Citation: E. Rohrer et al., PHOTOCONDUCTIVITY OF UNDOPED, NITROGEN-DOPED AND BORON-DOPED CVD-DIAMOND AND SYNTHETIC DIAMOND, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 879-883
Authors:
STUTZMANN M
AMBACHER O
ANGERER H
NEBEL CE
ROHRER E
Citation: M. Stutzmann et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF ALGAN - A COMPARISON WITH CVDDIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 123-128
Authors:
NEBEL CE
STUTZMANN M
LACHER F
KOIDL P
ZACHAI R
Citation: Ce. Nebel et al., CARRIER TRAPPING AND RELEASE IN CVD-DIAMOND RIMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 556-559
Authors:
WIMBAUER T
BRANDT MS
BAYERL MW
REINACHER NM
STUTZMANN M
HOFMANN DM
MOCHIZUKI Y
MIZUTA M
Citation: T. Wimbauer et al., RECOMBINATION CENTERS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES INVESTIGATED BY OPTICALLY AND ELECTRICALLY DETECTED MAGNETIC-RESONANCE/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4892-4902
Authors:
BRANDT MS
HERBST P
ANGERER H
AMBACHER O
STUTZMANN M
Citation: Ms. Brandt et al., THERMOPOWER INVESTIGATION OF N-TYPE AND P-TYPE GAN, Physical review. B, Condensed matter, 58(12), 1998, pp. 7786-7791
Authors:
PAU S
LIU ZX
KUHL J
RINGLING J
GRAHN HT
KHAN MA
SUN CJ
AMBACHER O
STUTZMANN M
Citation: S. Pau et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF EXCITONS IN HEXAGONAL GAN LAYERS GROWN ON SAPPHIRE, Physical review. B, Condensed matter, 57(12), 1998, pp. 7066-7070
Authors:
DIMITROV R
WITTMER L
FELSL HP
MITCHELL A
AMBACHER O
STUTZMANN M
Citation: R. Dimitrov et al., CARRIER CONFINEMENT IN ALGAN GAN HETEROSTRUCTURES GROWN BY PLASMA-INDUCED MOLECULAR-BEAM EPITAXY/, Physica status solidi. a, Applied research, 168(2), 1998, pp. 7-8
Authors:
KELLY MK
ROGG J
NEBEL CE
STUTZMANN M
KATAI S
Citation: Mk. Kelly et al., HIGH-RESOLUTION THERMAL-PROCESSING OF SEMICONDUCTORS USING PULSED-LASER INTERFERENCE PATTERNING, Physica status solidi. a, Applied research, 166(2), 1998, pp. 651-657
Authors:
NEBEL CE
CHRISTIANSEN S
STRUNK HP
DAHLHEIMER B
KARRER U
STUTZMANN M
Citation: Ce. Nebel et al., LASER-INTERFERENCE CRYSTALLIZATION OF AMORPHOUS-SILICON - APPLICATIONS AND PROPERTIES, Physica status solidi. a, Applied research, 166(2), 1998, pp. 667-674
Authors:
GROOS G
STUTZMANN M
Citation: G. Groos et M. Stutzmann, REALIZATION AND CHARACTERIZATION OF SI NANOSTRUCTURES, Physica status solidi. a, Applied research, 166(2), 1998, pp. 687-693
Authors:
DAHLHEIMER B
KARRER U
NEBEL CE
STUTZMANN M
Citation: B. Dahlheimer et al., CONDUCTIVE MICROCRYSTALLINE-SI FILMS PRODUCED BY LASER PROCESSING, Journal of non-crystalline solids, 230, 1998, pp. 916-920
Authors:
GROOS G
STUTZMANN M
Citation: G. Groos et M. Stutzmann, SI-NANOSTRUCTURES MADE BY LASER-ANNEALING, Journal of non-crystalline solids, 230, 1998, pp. 938-942
Authors:
JANSSEN R
KARRER U
DIMOVAMALINOVSKA D
STUTZMANN M
Citation: R. Janssen et al., AMORPHOUS-SILICON SUBOXIDE LIGHT-EMITTING-DIODES, Journal of non-crystalline solids, 230, 1998, pp. 1151-1155
Authors:
KNAPEK P
LUTEROVA K
PELANT I
FEJFAR A
KOCKA J
KUDRNA J
MALY P
JANSSEN R
STUTZMANN M
Citation: P. Knapek et al., ELECTROLUMINESCENT PROPERTIES OF A-SIOX-H ALLOYS, Journal of non-crystalline solids, 230, 1998, pp. 1160-1163
Authors:
KUGLER S
STUTZMANN M
Citation: S. Kugler et M. Stutzmann, PROCEEDINGS OF THE 17TH INTERNATIONAL-CONFERENCE ON AMORPHOUS AND MICROCRYSTALLINE SEMICONDUCTORS - SCIENCE AND TECHNOLOGY, BUDAPEST, HUNGARY AUGUST 25-29, 1997, Journal of non-crystalline solids, 230, 1998, pp. 7-7
Authors:
BRANDT MS
BAYERL MW
STUTZMANN M
GRAEFF CFO
Citation: Ms. Brandt et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE OF A-SI-H AT LOW MAGNETIC-FIELDS - THE INFLUENCE OF HYDROGEN ON THE DANGLING BOND RESONANCE, Journal of non-crystalline solids, 230, 1998, pp. 343-347
Authors:
ZAMANZADEHHANEBUTH N
BRANDT MS
STUTZMANN M
Citation: N. Zamanzadehhanebuth et al., VIBRATIONAL PROPERTIES OF SILOXENE - ISOTOPE SUBSTITUTION STUDIES, Journal of non-crystalline solids, 230, 1998, pp. 503-506
Authors:
HOLST J
ECKEY L
HOFFMANN A
AMBACHER O
STUTZMANN M
Citation: J. Holst et al., THE INFLUENCE OF THE AL-CONTENT ON THE OPTICAL GAIN IN ALGAN HETEROSTRUCTURES, Journal of crystal growth, 190, 1998, pp. 692-695
Authors:
ZEISEL R
NEBEL CE
STUTZMANN M
Citation: R. Zeisel et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SYNTHETIC TYPE IIB DIAMOND, Journal of applied physics, 84(11), 1998, pp. 6105-6108