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Results: 1-22 |
Results: 22
THICKNESS-DEPENDENT ELECTRON ACCUMULATION IN INAS THIN-FILMS ON GAAS(111)A - A SCANNING-TUNNELING-SPECTROSCOPY STUDY
Authors: YAMAGUCHI H SUDIJONO JL JOYCE BA JONES TS GATZKE C STRADLING RA
Citation: H. Yamaguchi et al., THICKNESS-DEPENDENT ELECTRON ACCUMULATION IN INAS THIN-FILMS ON GAAS(111)A - A SCANNING-TUNNELING-SPECTROSCOPY STUDY, Physical review. B, Condensed matter, 58(8), 1998, pp. 4219-4222
SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY
Authors: HOLMES DM TOK ES SUDIJONO JL JONES TS JOYCE BA
Citation: Dm. Holmes et al., SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY, Journal of crystal growth, 192(1-2), 1998, pp. 33-46
A SCANNING-TUNNELING-MICROSCOPY REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION-RATE EQUATION STUDY OF THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ON GAAS(001), GAAS(110) AND GAAS(111)A - QUANTUM DOTS AND 2-DIMENSIONAL MODES
Authors: JOYCE BA SUDIJONO JL BELK JG YAMAGUCHI H ZHANG XM DOBBS HT ZANGWILL A VVEDENSKY DD JONES TS
Citation: Ba. Joyce et al., A SCANNING-TUNNELING-MICROSCOPY REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION-RATE EQUATION STUDY OF THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ON GAAS(001), GAAS(110) AND GAAS(111)A - QUANTUM DOTS AND 2-DIMENSIONAL MODES, JPN J A P 1, 36(6B), 1997, pp. 4111-4117
SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A
Authors: BELK JG SUDIJONO JL YAMAGUCHI H ZHANG XM PASHLEY DW MCCONVILLE CF JONES TS JOYCE BA
Citation: Jg. Belk et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 915-918
PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: YAMAGUCHI H BELK JG ZHANG XM SUDIJONO JL FAHY MR JONES TS JOYCE BA
Citation: H. Yamaguchi et al., PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 112, 1997, pp. 138-141
SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/
Authors: BELK JG PASHLEY DW MCCONVILLE CF SUDIJONO JL JOYCE BA JONES TS
Citation: Jg. Belk et al., SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/, Physical review. B, Condensed matter, 56(16), 1997, pp. 10289-10296
ATOMIC-SCALE IMAGING OF STRAIN RELAXATION VIA MISFIT DISLOCATIONS IN HIGHLY MISMATCHED SEMICONDUCTOR HETEROEPITAXY - INAS GAAS(111)A/
Authors: YAMAGUCHI H BELK JG ZHANG XM SUDIJONO JL FAHY MR JONES TS PASHLEY DW
Citation: H. Yamaguchi et al., ATOMIC-SCALE IMAGING OF STRAIN RELAXATION VIA MISFIT DISLOCATIONS IN HIGHLY MISMATCHED SEMICONDUCTOR HETEROEPITAXY - INAS GAAS(111)A/, Physical review. B, Condensed matter, 55(3), 1997, pp. 1337-1340
SURFACE ALLOYING AT INAS-GAAS INTERFACES GROWN ON (001)-SURFACES BY MOLECULAR-BEAM EPITAXY
Authors: BELK JG MCCONVILLE CF SUDIJONO JL JONES TS JOYCE BA
Citation: Jg. Belk et al., SURFACE ALLOYING AT INAS-GAAS INTERFACES GROWN ON (001)-SURFACES BY MOLECULAR-BEAM EPITAXY, Surface science, 387(1-3), 1997, pp. 213-226
DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A
Authors: HOLMES DM SUDIJONO JL MCCONVILLE CF JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A, Surface science, 370(1), 1997, pp. 173-178
SURFACE CONTRAST IN 2 DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS GAAS(110) HETEROEPITAXY/
Authors: BELK JG SUDIJONO JL ZHANG XM NEAVE JH JONES TS JOYCE BA
Citation: Jg. Belk et al., SURFACE CONTRAST IN 2 DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS GAAS(110) HETEROEPITAXY/, Physical review letters, 78(3), 1997, pp. 475-478
RHEED AND STM STUDY OF THE 2-DIMENSIONAL GROWTH OF INAS ON GAAS(111)A
Authors: YAMAGUCHI H BELK JG ZHANG XM SUDIJONO JL FAHY MR JONES TS JOYCE BA
Citation: H. Yamaguchi et al., RHEED AND STM STUDY OF THE 2-DIMENSIONAL GROWTH OF INAS ON GAAS(111)A, Microelectronics, 28(8-10), 1997, pp. 825-831
GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY
Authors: JOYCE BA NEAVE JH FAHY MR SATO K HOLMES DM BELK JG SUDIJONO JL JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
STM STUDIES OF ISLAND FORMATION AND SURFACE ORDERING OF SI ON GAAS(001), GAAS(2X4) AND C(4X4) - IMPLICATIONS FOR DELTA-DOPING
Authors: SUDIJONO JL AVERY AR JOYCE BA JONES TS
Citation: Jl. Sudijono et al., STM STUDIES OF ISLAND FORMATION AND SURFACE ORDERING OF SI ON GAAS(001), GAAS(2X4) AND C(4X4) - IMPLICATIONS FOR DELTA-DOPING, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 333-339
DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 849-853
SITE OCCUPATION OF SI ATOMS DEPOSITED ON VICINAL GAAS(001)-(2X4) SURFACES
Authors: AVERY AR SUDIJONO JL JONES TS JOYCE BA
Citation: Ar. Avery et al., SITE OCCUPATION OF SI ATOMS DEPOSITED ON VICINAL GAAS(001)-(2X4) SURFACES, Applied surface science, 104, 1996, pp. 539-545
SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4)
Authors: BELK JG SUDIJONO JL HOLMES DM MCCONVILLE CF JONES TS JOYCE BA
Citation: Jg. Belk et al., SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4), Surface science, 365(3), 1996, pp. 735-742
MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES
Authors: AVERY AR GORINGE CM HOLMES DM SUDIJONO JL JONES TS
Citation: Ar. Avery et al., MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES, Physical review letters, 76(18), 1996, pp. 3344-3347
THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110)
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110), Surface science, 341(1-2), 1995, pp. 133-141
THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI GAAS(001) INTERFACE STUDIED BY STM/
Authors: AVERY AR SUDIJONO JL JONES TS JOYCE BA
Citation: Ar. Avery et al., THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI GAAS(001) INTERFACE STUDIED BY STM/, Surface science, 340(1-2), 1995, pp. 57-70
A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING
Authors: AVERY AR HOLMES DM SUDIJONO JL JONES TS FAHY MR JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208
DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(19), 1995, pp. 2848-2850
LARGE-SCALE SURFACE-STRUCTURE FORMED DURING GAAS (001) HOMOEPITAXY
Authors: ORME C JOHNSON MD SUDIJONO JL LEUNG KT ORR BG
Citation: C. Orme et al., LARGE-SCALE SURFACE-STRUCTURE FORMED DURING GAAS (001) HOMOEPITAXY, Applied physics letters, 64(7), 1994, pp. 860-862
Risultati: 1-22 |