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Results:
1-17
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Results: 17
Authors:
SYRBU AV
BEHREND J
FERNANDEZ J
CARLIN JF
BERSETH CA
IAKOVLEV VP
RUDRA A
KAPON E
Citation: Av. Syrbu et al., THERMAL-STABILITY OF INP-BASED STRUCTURES FOR WAFER FUSED LASER-DIODES, Journal of crystal growth, 188(1-4), 1998, pp. 338-342
Authors:
SYRBU AV
IAKOVLEV VP
BERSETH CA
DEHAESE O
RUDRA A
KAPON E
JACQUET J
BOUCART J
STARK C
GABORIT F
SAGNES I
HARMAND JC
RAJ R
Citation: Av. Syrbu et al., 30-DEGREES-C CW OPERATION OF 0.52-MU-M INGAASP ALGAAS VERTICAL-CAVITYLASERS WITH IN-SITU BUILT-IN LATERAL CURRENT CONFINEMENT BY LOCALIZEDFUSION/, Electronics Letters, 34(18), 1998, pp. 1744-1745
Authors:
BERSETH CA
SYRBU AV
IAKOVLEV VP
DEHAESE O
RUDRA A
KAPON E
Citation: Ca. Berseth et al., HIGHLY ACCURATE MEASUREMENT OF REFLECTIVITY AND OPTICAL-ABSORPTION INDISTRIBUTED BRAGG REFLECTORS USING WAFER FUSED RESONATOR, Electronics Letters, 34(17), 1998, pp. 1666-1667
Authors:
MAWST LJ
BHATTACHARYA A
NESNIDAL M
LOPEZ J
BOTEZ D
SYRBU AV
YAKOVLEV VP
SURUCEANU GI
MEREUTZA AZ
JANSEN M
NABIEV RF
Citation: Lj. Mawst et al., MOVPE-GROWN HIGH CW POWER INGAAS INGAASP/INGAP DIODE-LASERS/, Journal of crystal growth, 170(1-4), 1997, pp. 383-389
Authors:
BOTEZ D
MAWST LJ
BHATTACHARYA A
LOPEZ J
LI J
KUECH TF
IAKOVLEV VP
SURUCEANU GI
CALIMAN A
SYRBU AV
MORRIS J
Citation: D. Botez et al., 6W CW FRONT-FACET POWER FROM SHORT-CAVITY (0.5 MM), 100-MU-M STRIPE AL-FREE 0.98-MU-M-EMITTING DIODE-LASERS, Electronics Letters, 33(24), 1997, pp. 2037-2039
Authors:
SYRBU AV
FERNANDEZ J
BEHREND J
SAGALOWICZ L
IAKOVLEV VP
CARLIN JF
BERSETH CA
RUDRA A
KAPON E
Citation: Av. Syrbu et al., CHARACTERISTICS OF INASP INGAASP EDGE EMITTING LASER-DIODES OBTAINED BY LOCALIZED FUSION ON GAAS SUBSTRATES/, Electronics Letters, 33(23), 1997, pp. 1954-1955
Authors:
SYRBU AV
FERNANDEZ J
BEHREND J
BERSETH CA
CARLIN JF
RUDRA A
KAPON E
Citation: Av. Syrbu et al., INGAAS INGAASP/INP EDGE EMITTING LASER-DIODES ON P-GAAS SUBSTRATES OBTAINED BY LOCALIZED WAFER FUSION/, Electronics Letters, 33(10), 1997, pp. 866-868
Authors:
CARLIN JF
SYRBU AV
BERSETH CA
BEHREND J
RUDRA A
KAPON E
Citation: Jf. Carlin et al., LOW-THRESHOLD 1.55 MU-M WAVELENGTH INASP INGAASP STRAINED MULTIQUANTUM-WELL LASER-DIODE GROWN BY CHEMICAL BEAM EPITAXY/, Applied physics letters, 71(1), 1997, pp. 13-15
Authors:
SYRBU AV
MEREUTZA AZ
SURUCEANU GI
YAKOVLEV VP
CALIMAN A
LUPU AT
VIERU S
PREDESCU M
POPESCU IM
ISPASOIU RG
Citation: Av. Syrbu et al., FABRICATION, CHARACTERIZATION, AND APPLICATIONS OF HIGH-PERFORMANCE ALGAAS-BASED BURIED-HETEROSTRUCTURE DIODE-LASERS, Optical engineering, 35(5), 1996, pp. 1278-1283
Authors:
SYRBU AV
YAKOVLEV VP
SURUCEANU GI
MEREUTZA AZ
MAWST LJ
BHATTACHARYA A
NESNIDAL M
LOPEZ J
BOTEZ D
Citation: Av. Syrbu et al., ZNSE-FACET-PASSIVATED INGAAS INGAASP/INGAP DIODE-LASERS OF HIGH CW POWER AND WALLPLUG EFFICIENCY/, Electronics Letters, 32(4), 1996, pp. 352-354
Authors:
BOTEZ D
MAWST LJ
BHATTACHARYA A
LOPEZ J
LI J
KUECH TF
IAKOVLEV VP
SURUCEANU GI
CALIMAN A
SYRBU AV
Citation: D. Botez et al., 66-PERCENT CW WALLPLUG EFFICIENCY FROM AL-FREE 0.98-MU-M-EMITTING DIODE-LASERS, Electronics Letters, 32(21), 1996, pp. 2012-2013
Authors:
BERTOLOTTI M
LIAKHOU GL
VOTI RL
WANG RP
SIBILIA C
SYRBU AV
YAKOVLEV VP
Citation: M. Bertolotti et al., AN EXPERIMENTAL AND THEORETICAL-ANALYSIS OF THE TEMPERATURE PROFILE IN SEMICONDUCTOR-LASER DIODES USING THE PHOTODEFLECTION TECHNIQUE, Measurement science & technology, 6(9), 1995, pp. 1278-1290
Authors:
YAKOVLEV VP
LUPU AT
SURUCHANU GI
SYRBU AV
MEREUTSA AZ
KRAVETSKII IV
KULYUK LL
Citation: Vp. Yakovlev et al., INNER GENERATION OF 2ND HARMONICS IN ALGA AS LASER-DIODES DURING THEIR DEGRADATION, Pis'ma v Zurnal tehniceskoj fiziki, 21(13), 1995, pp. 75-80
Authors:
BERTOLOTTI M
LIAKHOU G
VOTI RL
WANG RP
SIBILIA C
SYRBU AV
YAKOVLEV VP
Citation: M. Bertolotti et al., ON MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD, Journal de physique. IV, 4(C7), 1994, pp. 211-214
Authors:
SYRBU AV
MEREUTZA AZ
YAKOVLEV VP
SURUCEANU GI
LUPU AT
Citation: Av. Syrbu et al., BURIED HETEROSTRUCTURE ALGAAS PHOTONIC DEVICES FABRICATED BY LOW-TEMPERATURE MESA MELT ETCHING AND REGROWTH, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 302-304
Authors:
CHAND N
CHU SNG
DUTTA NK
LOPATA J
GEVA M
SYRBU AV
MEREUTZA AZ
YAKOVLEV VP
Citation: N. Chand et al., GROWTH AND FABRICATION OF HIGH-PERFORMANCE 980-NM STRAINED INGAAS QUANTUM-WELL LASERS FOR ERBIUM-DOPED FIBER AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 424-440
Authors:
KRAVETSKY IV
KULYUK LL
LUPU AT
SHUTOV DA
SURUCEANU GI
SYRBU AV
YAKOVLEV VP
Citation: Iv. Kravetsky et al., INTERNAL 2ND-HARMONIC GENERATION IN CW ALGAAS SQW LASERS - THE FACET DEGRADATION MONITORING, Applied surface science, 69(1-4), 1993, pp. 424-428
Risultati:
1-17
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