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Results: 1-24 |

Results: 24

(InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range

Authors: Mereuta, A Saint-Girons, G Bouchoule, S Sagnes, I Alexandre, F Le Roux, G Decobert, J Ougazzaden, A

Citation: A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188

Influence of the thermal treatment on the optical and structural properties of 1.3 mu m emitting LP-MOVPE grown InAs/CaAs quantum dots

Authors: Saint-Girons, G Mereuta, A Patriarche, G Gerard, JM Sagnes, I

Citation: G. Saint-girons et al., Influence of the thermal treatment on the optical and structural properties of 1.3 mu m emitting LP-MOVPE grown InAs/CaAs quantum dots, OPT MATER, 17(1-2), 2001, pp. 263-266

Normal-incidence (001) second-harmonic generation in ordered Ga0.5In0.5P

Authors: Sauvage, S Bernard, Y Sagnes, I Patriarche, G Glas, F Le Roux, G Bensoussan, M Levenson, JA

Citation: S. Sauvage et al., Normal-incidence (001) second-harmonic generation in ordered Ga0.5In0.5P, J OPT SOC B, 18(1), 2001, pp. 81-84

Optical switching waves in III-V semiconductor microresonators - art. no. 075318

Authors: Ganne, I Slekys, G Sagnes, I Kuszelewicz, R

Citation: I. Ganne et al., Optical switching waves in III-V semiconductor microresonators - art. no. 075318, PHYS REV B, 6307(7), 2001, pp. 5318

MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs

Authors: Sagnes, I Le Roux, G Meriadec, C Mereuta, A Saint-Girons, G Bensoussan, M

Citation: I. Sagnes et al., MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs, ELECTR LETT, 37(8), 2001, pp. 500-501

Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

Authors: Saint-Girons, G Patriarche, G Largeau, L Coelho, J Mereuta, A Moison, JM Gerard, JM Sagnes, I

Citation: G. Saint-girons et al., Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots, APPL PHYS L, 79(14), 2001, pp. 2157-2159

Enhancement of second-harmonic generation in a one-dimensional semiconductor photonic band gap

Authors: Dumeige, Y Vidakovic, P Sauvage, S Sagnes, I Levenson, JA Sibilia, C Centini, M D'Aguanno, G Scalora, M

Citation: Y. Dumeige et al., Enhancement of second-harmonic generation in a one-dimensional semiconductor photonic band gap, APPL PHYS L, 78(20), 2001, pp. 3021-3023

Optical pattern formation in passive semiconductor microresonators

Authors: Slekys, G Ganne, I Sagnes, I Kuszelewicz, R

Citation: G. Slekys et al., Optical pattern formation in passive semiconductor microresonators, J OPT B-QUA, 2(3), 2000, pp. 443-446

Electroluminescent diodes with microcavity for spontaneous emission control

Authors: Nelep, K Sagnes, I Kazmierski, C Bourdon, G Robert, I Abram, I

Citation: K. Nelep et al., Electroluminescent diodes with microcavity for spontaneous emission control, J PHYS IV, 10(P8), 2000, pp. 123-124

1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response

Authors: Saint-Girons, G Mereuta, A Gerard, JM Ramdane, A Sagnes, I

Citation: G. Saint-girons et al., 1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response, MAT SCI E B, 78(2-3), 2000, pp. 145-147

GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth

Authors: Patriarche, G Meriadec, C LeRoux, G Deparis, C Sagnes, I Harmand, JC Glas, F

Citation: G. Patriarche et al., GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth, APPL SURF S, 164, 2000, pp. 15-21

Novel technologies for 1.55-mu m vertical cavity lasers

Authors: Streubel, K Hammar, M Salomonsson, F Bentell, J Mogg, S Rapp, S Jacquet, J Boucart, J Stark, C Plais, A Gaborit, F Derouin, E Bouche, N Rudra, A Syrbu, AV Iakovlev, VP Berseth, CA Dehaese, O Kapon, E Moussa, H Sagnes, I

Citation: K. Streubel et al., Novel technologies for 1.55-mu m vertical cavity lasers, OPT ENG, 39(2), 2000, pp. 488-497

Optical self-organization in bulk and multiquantum well GaAlAs microresonators

Authors: Kuszelewicz, R Ganne, I Sagnes, I Slekys, G Brambilla, M

Citation: R. Kuszelewicz et al., Optical self-organization in bulk and multiquantum well GaAlAs microresonators, PHYS REV L, 84(26), 2000, pp. 6006-6009

Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE

Authors: Mereuta, A Bouchoule, S Alexandre, F Sagnes, I Decobert, J Ougazzaden, A

Citation: A. Mereuta et al., Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE, ELECTR LETT, 36(5), 2000, pp. 436-437

Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities

Authors: Bourdon, G Robert, I Adams, R Nelep, K Sagnes, I Moison, JM Abram, I

Citation: G. Bourdon et al., Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities, APPL PHYS L, 77(9), 2000, pp. 1345-1347

Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Authors: Patriarche, G Sagnes, I Boucaud, P Le Thanh, V Bouchier, D Hernandez, C Campidelli, Y Bensahel, D

Citation: G. Patriarche et al., Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition, APPL PHYS L, 77(3), 2000, pp. 370-372

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition

Authors: Brunhes, T Boucaud, P Sauvage, S Aniel, F Lourtioz, JM Hernandez, C Campidelli, Y Kermarrec, O Bensahel, D Faini, G Sagnes, I

Citation: T. Brunhes et al., Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition, APPL PHYS L, 77(12), 2000, pp. 1822-1824

MOVPE growth of a monolithic VCSEL at 1.56 mu m in the InGaAlAs-InAlAs system lattice matched to InP

Authors: Debray, JP Sagnes, I Le Roux, G Legay, P Quillec, M Kazmierski, C Madani, R Palmier, JF

Citation: Jp. Debray et al., MOVPE growth of a monolithic VCSEL at 1.56 mu m in the InGaAlAs-InAlAs system lattice matched to InP, IEEE PHOTON, 11(7), 1999, pp. 770-772

Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror

Authors: Harmand, JC Ungaro, G Sagnes, I Debray, JP Sermage, B Rivera, T Meriadec, C Oudar, JL Raj, R Olivier-martin, F Kazmierski, C Madani, R

Citation: Jc. Harmand et al., Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror, J CRYST GR, 202, 1999, pp. 837-840

Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

Authors: Hernandez, C Campidelli, Y Simon, D Bensahel, D Sagnes, I Patriarche, G Boucaud, P Sauvage, S

Citation: C. Hernandez et al., Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor, J APPL PHYS, 86(2), 1999, pp. 1145-1148

+55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers

Authors: Kazmierski, C Debray, JP Madani, R Sagnes, I Ougazzaden, A Bouadma, N Etrillard, J Alexandre, F Quillec, M

Citation: C. Kazmierski et al., +55 degrees C pulse lasing at 1.56 mu m of all-monolithic InGaAlAs/InP vertical cavity lasers, ELECTR LETT, 35(10), 1999, pp. 811-812

Near room-temperature continuous-wave operation of electrically pumped 1.55 mu m vertical cavity lasers with InGaAsP/InP bottom mirror

Authors: Rapp, S Salomonsson, F Bentell, J Sagnes, I Moussa, H Meriadec, C Raj, R Streubel, K Hammar, M

Citation: S. Rapp et al., Near room-temperature continuous-wave operation of electrically pumped 1.55 mu m vertical cavity lasers with InGaAsP/InP bottom mirror, ELECTR LETT, 35(1), 1999, pp. 49-50

Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion

Authors: Syrbu, AV Iakovlev, VP Berseth, CA Dehaese, O Rudra, A Kapon, E Stark, C Boucart, J Gaborit, F Jacquet, J Sagnes, I Harmand, JC Raj, R

Citation: Av. Syrbu et al., Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion, JPN J A P 1, 37(11), 1998, pp. 6016-6017

High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy

Authors: Sagnes, I Prevot, I Patriarche, G Le Roux, G Gayral, B Lemaitre, A Gerard, JM

Citation: I. Sagnes et al., High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 524-529

Risultati: 1-24 |