AAAAAA

   
Results: 1-17 |
Results: 17
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots
Authors: Sanguinetti, S Gurioli, M Grilli, E Guzzi, M Henini, M
Citation: S. Sanguinetti et al., Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 111-114
Dynamic quantum-confined stark effect in self-assembled InAs quantum dots
Authors: Gurioli, M Sanguinetti, S Henini, M
Citation: M. Gurioli et al., Dynamic quantum-confined stark effect in self-assembled InAs quantum dots, APPL PHYS L, 78(7), 2001, pp. 931-933
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
Authors: Sanguinetti, S Chiantoni, G Miotto, A Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation: S. Sanguinetti et al., Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case, MICRON, 31(3), 2000, pp. 309-313
3D island nucleation behaviour on high index substrates
Authors: Sanguinetti, S Chiantoni, G Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation: S. Sanguinetti et al., 3D island nucleation behaviour on high index substrates, MAT SCI E B, 74(1-3), 2000, pp. 239-241
Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots
Authors: Sanguinetti, S Gurioli, M Grilli, E Guzzi, M Henini, M
Citation: S. Sanguinetti et al., Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 198-200
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures
Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S Lazzarini, L Salviati, G
Citation: S. Sanguinetti et al., Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures, THIN SOL FI, 380(1-2), 2000, pp. 224-226
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S
Citation: S. Sanguinetti et al., Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, APPL PHYS L, 77(9), 2000, pp. 1307-1309
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAsquantum dots grown on (N11) GaAs substrates
Authors: Sanguinetti, S Gurioli, M Grilli, E Guzzi, M Henini, M
Citation: S. Sanguinetti et al., Piezoelectric-induced quantum-confined Stark effect in self-assembled InAsquantum dots grown on (N11) GaAs substrates, APPL PHYS L, 77(13), 2000, pp. 1982-1984
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots
Authors: Sanguinetti, S Castiglioni, S Grilli, E Guzzi, M Panzarini, G Andreani, LC Henini, M
Citation: S. Sanguinetti et al., Intrinsic polarised emission from InAs/GaAs(311)A quantum dots, JPN J A P 1, 38(8), 1999, pp. 4676-4679
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures
Authors: Sanguinetti, S Chiantoni, G Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation: S. Sanguinetti et al., Substrate orientation dependence of island nucleation critical thickness in strained heterostructures, EUROPH LETT, 47(6), 1999, pp. 701-707
Characterization studies of purified HgI2 precursors
Authors: Schieber, M Zuck, A Sanguinetti, S Montalti, M Braiman, M Melekhov, L Nissenbaum, J Grilli, E Guzzi, M Turchetta, R Dulinski, W Husson, D Riester, JL
Citation: M. Schieber et al., Characterization studies of purified HgI2 precursors, NUCL INST A, 428(1), 1999, pp. 25-29
Carrier thermal escape and retrapping in self-assembled quantum dots
Authors: Sanguinetti, S Henini, M Alessi, MG Capizzi, M
Citation: S. Sanguinetti et al., Carrier thermal escape and retrapping in self-assembled quantum dots, PHYS REV B, 60(11), 1999, pp. 8276-8283
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
Authors: Sanguinetti, S Miotto, A Castiglioni, S Grilli, E Guzzi, M Henini, M Polimeni, A Patane, A Eaves, L Main, PC
Citation: S. Sanguinetti et al., Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces, MICROELEC J, 30(4-5), 1999, pp. 419-425
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures
Authors: Polimeni, A Patane, A Henini, M Eaves, L Main, PC Sanguinetti, S Guzzi, M
Citation: A. Polimeni et al., Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures, J CRYST GR, 202, 1999, pp. 276-279
Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy
Authors: Cavallini, A Fraboni, B Pizzini, S Binetti, S Sanguinetti, S Lazzarini, L Salviati, G
Citation: A. Cavallini et al., Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy, J APPL PHYS, 85(3), 1999, pp. 1582-1586
Self-aggregation of InAs quantum dots on (N11) GaAs substrates
Authors: Sanguinetti, S Fortina, SC Miotto, A Grilli, E Guzzi, M Henini, M Polimeni, A Eaves, L
Citation: S. Sanguinetti et al., Self-aggregation of InAs quantum dots on (N11) GaAs substrates, THIN SOL FI, 336(1-2), 1998, pp. 9-12
Erbium-doped silicon epilayers grown by liquid-phase epitaxy
Authors: Binetti, S Cavallini, A Dellafiore, A Fraboni, B Grilli, E Guzzi, M Pizzini, S Sanguinetti, S
Citation: S. Binetti et al., Erbium-doped silicon epilayers grown by liquid-phase epitaxy, J LUMINESC, 80(1-4), 1998, pp. 347-351
Risultati: 1-17 |