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Results: 1-16 |
Results: 16
Radiation hardness of SiC ion detectors under relativistic protons
Authors: Ivanov, AM Strokan, NB Davydov, DV Savkina, NS Lebedev, AA Mironov, YT Ryabov, GA Ivanov, EM
Citation: Am. Ivanov et al., Radiation hardness of SiC ion detectors under relativistic protons, SEMICONDUCT, 35(4), 2001, pp. 481-484
The effect of high-temperature epitaxial SiC layer growth on the structureof porous silicon carbide
Authors: Savkina, NS Ratnikov, VV Shuman, VB
Citation: Ns. Savkina et al., The effect of high-temperature epitaxial SiC layer growth on the structureof porous silicon carbide, SEMICONDUCT, 35(2), 2001, pp. 153-157
Ideal 4H-SiC pn junction and its characteristic shunt
Authors: Strel'chuk, AM Savkina, NS
Citation: Am. Strel'Chuk et Ns. Savkina, Ideal 4H-SiC pn junction and its characteristic shunt, MAT SCI E B, 80(1-3), 2001, pp. 378-382
Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum
Authors: Sorokin, LM Tregubova, AS Shcheglov, MP Lebedev, AA Savkina, NS
Citation: Lm. Sorokin et al., Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum, PHYS SOL ST, 42(8), 2000, pp. 1422-1426
Radiation defects in n-4H-SiC irradiated with 8-MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-4H-SiC irradiated with 8-MeV protons, SEMICONDUCT, 34(9), 2000, pp. 1016-1020
Radiation defects in n-6H-SiC irradiated with 8 MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-6H-SiC irradiated with 8 MeV protons, SEMICONDUCT, 34(8), 2000, pp. 861-866
6H-SiC epilayers as nuclear particle detectors
Authors: Lebedev, AA Savkina, NS Ivanov, AM Strokan, NB Davydov, DV
Citation: Aa. Lebedev et al., 6H-SiC epilayers as nuclear particle detectors, SEMICONDUCT, 34(2), 2000, pp. 243-249
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
Authors: Lebedev, AA Davydov, DV Savkina, NS Tregubova, AS Shcheglov, MP Yakimova, R Syvajarvi, M Janzen, E
Citation: Aa. Lebedev et al., Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum, SEMICONDUCT, 34(10), 2000, pp. 1133-1136
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M
Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54
Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures
Authors: Brezeanu, G Badila, M Tudor, B Godignon, P Millan, J Locatelli, ML Chante, JP Lebedev, A Savkina, NS
Citation: G. Brezeanu et al., Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures, SOL ST ELEC, 44(4), 2000, pp. 571-579
Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovski, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam, J APPL PHYS, 88(11), 2000, pp. 6265-6271
Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes
Authors: Kalinina, EV Kholuyanov, GF Shchukarev, AV Savkina, NS Babanin, AI Yagovkina, MA Kuznetsov, NI
Citation: Ev. Kalinina et al., Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes, DIAM RELAT, 8(6), 1999, pp. 1114-1117
New results in sublimation growth of the SiC epilayers
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Yagovkina, MA
Citation: Ns. Savkina et al., New results in sublimation growth of the SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 165-167
Influence of proton irradiation on recombination current in 6H-SiC pn structures
Authors: Strel'chuk, AM Kozlovski, VV Savkina, NS Rastegaeva, MG Andreev, AN
Citation: Am. Strel'Chuk et al., Influence of proton irradiation on recombination current in 6H-SiC pn structures, MAT SCI E B, 61-2, 1999, pp. 441-445
Studies of the effect of proton irradiation on 6H-SiC pn junction properties
Authors: Lebedev, AA Strel'chuk, AM Kozlovski, VV Savkina, NS Davydov, DV Solov'ev, VV
Citation: Aa. Lebedev et al., Studies of the effect of proton irradiation on 6H-SiC pn junction properties, MAT SCI E B, 61-2, 1999, pp. 450-453
Doping of 6H-SiC pn structures by proton irradiation
Authors: Strel'chuk, AM Lebedev, AA Kozlovski, VV Savkina, NS Davydov, DV Solov'ev, VV Rastegaeva, MG
Citation: Am. Strel'Chuk et al., Doping of 6H-SiC pn structures by proton irradiation, NUCL INST B, 147(1-4), 1999, pp. 74-78
Risultati: 1-16 |