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Results: 1-13 |
Results: 13
Strategy for electromagnetic interconnect modeling
Authors: Meuris, P Schoenmaker, W Magnus, W
Citation: P. Meuris et al., Strategy for electromagnetic interconnect modeling, IEEE COMP A, 20(6), 2001, pp. 753-762
Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation
Authors: Rajendran, K Schoenmaker, W
Citation: K. Rajendran et W. Schoenmaker, Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation, SOL ST ELEC, 45(2), 2001, pp. 229-233
Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers with a linearly graded germanium profile
Authors: Rajendran, K Schoenmaker, W
Citation: K. Rajendran et W. Schoenmaker, Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers with a linearly graded germanium profile, SOL ST ELEC, 45(11), 2001, pp. 1879-1884
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors
Authors: Magnus, W Schoenmaker, W
Citation: W. Magnus et W. Schoenmaker, On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors, MICROEL REL, 41(1), 2001, pp. 31-35
Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs
Authors: Rajendran, K Schoenmaker, W
Citation: K. Rajendran et W. Schoenmaker, Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs, MICROELEC J, 32(8), 2001, pp. 631-639
Studies of boron diffusivity in strained Si1-xGex epitaxial layers
Authors: Rajendran, K Schoenmaker, W
Citation: K. Rajendran et W. Schoenmaker, Studies of boron diffusivity in strained Si1-xGex epitaxial layers, J APPL PHYS, 89(2), 2001, pp. 980-987
Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers
Authors: Rajendran, K Schoenmaker, W Decoutere, S Loo, R Caymax, M Vandervorst, W
Citation: K. Rajendran et al., Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers, IEEE DEVICE, 48(9), 2001, pp. 2022-2031
Quantized conductance, circuit topology, and flux quantization
Authors: Magnus, W Schoenmaker, W
Citation: W. Magnus et W. Schoenmaker, Quantized conductance, circuit topology, and flux quantization, PHYS REV B, 61(16), 2000, pp. 10883-10889
Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors
Authors: Magnus, W Schoenmaker, W
Citation: W. Magnus et W. Schoenmaker, Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal-insulator-semiconductor capacitors, J APPL PHYS, 88(10), 2000, pp. 5833-5842
Modeling electromigration as a fluid-gas system
Authors: Schoenmaker, W Petrescu, V
Citation: W. Schoenmaker et V. Petrescu, Modeling electromigration as a fluid-gas system, MICROEL REL, 39(11), 1999, pp. 1667-1676
Non-Abelian random polygons: A new model in statistical physics
Authors: Schoenmaker, W Magnus, W
Citation: W. Schoenmaker et W. Magnus, Non-Abelian random polygons: A new model in statistical physics, J STAT PHYS, 94(3-4), 1999, pp. 389-413
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures
Authors: Pokatilov, EP Fomin, VM Balaban, SN Gladilin, VN Klimin, SN Devreese, JT Magnus, W Schoenmaker, W Collaert, N Van Rossum, M De Meyer, K
Citation: Ep. Pokatilov et al., Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures, J APPL PHYS, 85(9), 1999, pp. 6625-6631
On the use of a new integral theorem for the quantum mechanical treatment of electric circuits
Authors: Magnus, W Schoenmaker, W
Citation: W. Magnus et W. Schoenmaker, On the use of a new integral theorem for the quantum mechanical treatment of electric circuits, J MATH PHYS, 39(12), 1998, pp. 6715-6719
Risultati: 1-13 |