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Results:
1-15
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Results: 15
Authors:
Castracane, P
Selmi, L
Casadio, S
Cacciani, M
Fiocci, G
Citation: P. Castracane et al., Ground-based remote sensing of wind, temperature and aerosol backscattering in an urban environment during different atmospheric stability conditions, PHYS CH P B, 26(3), 2001, pp. 239-245
Authors:
Driussi, F
Esseni, D
Selmi, L
Piazza, F
Citation: F. Driussi et al., Hot hole gate current in surface channel PMOSFETs, IEEE ELEC D, 22(1), 2001, pp. 29-31
Authors:
Sangiorgi, E
Selmi, L
Citation: E. Sangiorgi et L. Selmi, Proceedings of the 12th Biennial Conference on Insulating Films on Semiconductors - June 20-23, 2001 Udine, Italy - Preface, MICROEL ENG, 59(1-4), 2001, pp. 1-1
Authors:
Esseni, D
Bude, JD
Selmi, L
Citation: D. Esseni et al., Experimental study of low voltage anode hole injection in thin oxides, MICROEL ENG, 59(1-4), 2001, pp. 55-60
Authors:
Esseni, D
Selmi, L
Citation: D. Esseni et L. Selmi, BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications, MICROEL ENG, 59(1-4), 2001, pp. 231-236
Authors:
Mastrapasqua, M
Esseni, D
Celler, GK
Fiegna, C
Selmi, L
Sangiorgi, E
Citation: M. Mastrapasqua et al., Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs, MICROEL ENG, 59(1-4), 2001, pp. 409-416
Authors:
Palestri, P
Selmi, L
Citation: P. Palestri et L. Selmi, Non-local microscopic view of signal propagation times in BJTs biased up to high currents, SOL ST ELEC, 45(10), 2001, pp. 1753-1761
Authors:
Dalla Serra, A
Abramo, A
Palestri, P
Selmi, L
Widdershoven, F
Citation: A. Dalla Serra et al., Closed- and open-boundary models for gate-current calculation in n-MOSFETs, IEEE DEVICE, 48(8), 2001, pp. 1811-1815
Authors:
Palestri, P
Fiegna, C
Selmi, L
Peter, MS
Hurkx, GAM
Slotboom, JW
Sangiorgi, E
Citation: P. Palestri et al., A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles, IEEE DEVICE, 47(5), 2000, pp. 1044-1051
Authors:
Esseni, D
Selmi, L
Ghetti, A
Sangiorgi, E
Citation: D. Esseni et al., Injection efficiency of CHISEL gate currents in short MOS devices: Physical mechanisms, device implications, and sensitivity to technological parameters, IEEE DEVICE, 47(11), 2000, pp. 2194-2200
Authors:
Abramo, A
Cardin, A
Selmi, L
Sangiorgi, E
Citation: A. Abramo et al., Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs, IEEE DEVICE, 47(10), 2000, pp. 1858-1863
Authors:
Pavesi, M
Selmi, L
Manfredi, M
Sangiorgi, E
Mastrapasqua, M
Bude, JD
Citation: M. Pavesi et al., Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFET's by light emission measurements, IEEE ELEC D, 20(11), 1999, pp. 595-597
Authors:
Ghetti, A
Selmi, L
Bez, RT
Citation: A. Ghetti et al., Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells, IEEE DEVICE, 46(4), 1999, pp. 696-702
Authors:
Esseni, D
Selmi, L
Citation: D. Esseni et L. Selmi, A better understanding of substrate enhanced gate current in VLSI MOSFET'sand flash cells - Part I: Phenomenological aspects, IEEE DEVICE, 46(2), 1999, pp. 369-375
Authors:
Selmi, L
Esseni, D
Citation: L. Selmi et D. Esseni, A better understanding of substrate enhanced gate current in VLSI MOSFET'sand flash cells - Part II: Physical analysis, IEEE DEVICE, 46(2), 1999, pp. 376-382
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