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Results: 1-25/28
Authors:
Yakovlev, YP
Danilova, AP
Imenkov, AN
Kolchanova, NM
Sherstnev, VV
Citation: Yp. Yakovlev et al., Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects, PHI T ROY A, 359(1780), 2001, pp. 523-531
Authors:
Skvortsova, VI
Sherstnev, VV
Gruden, MA
Myasoedov, NF
Stakhovskaya, LV
Efremova, NM
Hadzhieva, MK
Grivennikov, IA
Klyushnik, TP
Chaschikhina, EV
Kuzhilina, VB
Citation: Vi. Skvortsova et al., A role of autoimmune mechanisms in ichemic brain damage, ZH NEVR PS, 2001, pp. 46-54
Authors:
Krier, A
Sherstnev, VV
Citation: A. Krier et Vv. Sherstnev, LEDs for formaldehyde detection at 3.6 mu m, J PHYS D, 34(3), 2001, pp. 428-432
Authors:
Civis, S
Imenkov, AN
Danilova, AP
Kolchanova, NM
Sherstnev, VV
Yakovlev, YP
Walters, AD
Citation: S. Civis et al., A tunable single-mode 3.2 mu m laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm(-1), SPECT ACT A, 56(11), 2000, pp. 2125-2130
Authors:
Krier, A
Gao, HH
Sherstnev, VV
Citation: A. Krier et al., Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs, IEE P-OPTO, 147(3), 2000, pp. 217-221
Authors:
Astakhova, AP
Danilova, TN
Imenkov, AN
Kolchanova, NM
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Astakhova et al., Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane, SEMICONDUCT, 34(9), 2000, pp. 1100-1102
Authors:
Danilova, AP
Imenkov, AN
Kolchanova, NM
Civis, S
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Danilova et al., Single-mode InAsSb/InAsSbP laser (lambda approximate to 3.2 mu m) tunable over 100 angstrom, SEMICONDUCT, 34(2), 2000, pp. 237-242
Authors:
Danilova, TN
Imenkov, AN
Sherstnev, VV
Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP double-heterostructure lasers emitting at 3-4 mu m: Part I, SEMICONDUCT, 34(11), 2000, pp. 1343-1350
Authors:
Civis, S
Imenkov, AN
Danilova, AP
Kolchanova, NM
Sherstnev, VV
Yakovlev, YP
Walters, AD
Citation: S. Civis et al., Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 mu m, APP PHYS B, 71(4), 2000, pp. 481-485
Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy
Authors:
Krier, A
Sherstnev, VV
Labadi, Z
Kreier, SE
Gao, HH
Citation: A. Krier et al., Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy, J PHYS D, 33(24), 2000, pp. 3156-3160
Authors:
Krier, A
Sherstnev, VV
Citation: A. Krier et Vv. Sherstnev, Powerful interface light emitting diodes for methane gas detection, J PHYS D, 33(2), 2000, pp. 101-106
Authors:
Krier, A
Sherstnev, VV
Gao, HH
Citation: A. Krier et al., A novel LED module for the detection of H2S at 3.8 mu m, J PHYS D, 33(14), 2000, pp. 1656-1661
Authors:
Gao, HH
Krier, A
Sherstnev, VV
Citation: Hh. Gao et al., Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m, APPL PHYS L, 77(6), 2000, pp. 872-874
Authors:
Sherstnev, VV
Monahov, AM
Krier, A
Hill, G
Citation: Vv. Sherstnev et al., Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection, APPL PHYS L, 77(24), 2000, pp. 3908-3910
Authors:
Danilova, AP
Imenkov, AN
Danilova, TN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Danilova et al., Fast tuning of 3.3 mu m InAsSb/InAsSbP diode lasers due to nonlinear optical effects, SPECT ACT A, 55(10), 1999, pp. 2077-2082
Authors:
Danilova, TN
Danilova, AP
Imenkov, AN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP heterostructure lasers with a large range of current tuningof the lasing frequency, TECH PHYS L, 25(10), 1999, pp. 766-768
Authors:
Danilova, AP
Danilova, TN
Imenkov, AN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Danilova et al., Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity, SEMICONDUCT, 33(9), 1999, pp. 991-995
Authors:
Danilova, AP
Danilova, TN
Imenkov, AN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Danilova et al., Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions, SEMICONDUCT, 33(8), 1999, pp. 924-928
Authors:
Voronina, TI
Lagunova, TS
Moiseev, KD
Rozov, AE
Sipovskaya, MA
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ti. Voronina et al., Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it, SEMICONDUCT, 33(7), 1999, pp. 719-725
Authors:
Zegrya, GG
Mikhailova, MP
Danilova, TN
Imenkov, AN
Moiseev, KD
Sherstnev, VV
Yakovlev, YP
Citation: Gg. Zegrya et al., Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions, SEMICONDUCT, 33(3), 1999, pp. 350-354
Authors:
Danilova, TN
Zhurtanov, BE
Zakgeim, AL
Il'inskaya, ND
Imenkov, AN
Saraev, ON
Sipovskaya, MA
Sherstnev, VV
Yakovlev, YP
Citation: Tn. Danilova et al., High-power light-emitting diodes operating in the 1.9 to 2.1-mu m spectralrange, SEMICONDUCT, 33(2), 1999, pp. 206-209
Authors:
Danilova, AP
Danilova, TN
Imenkov, AN
Kolchanova, NM
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ap. Danilova et al., Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 mu m) due to nonlinear optical effects, SEMICONDUCT, 33(2), 1999, pp. 210-215
Authors:
Danilova, AP
Imenkov, AN
Kolchanova, NM
Sherstnev, VV
Yakovlev, YP
Civis, S
Citation: Ap. Danilova et al., Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 mu m, SEMICONDUCT, 33(12), 1999, pp. 1322-1327
Authors:
Gao, HH
Krier, A
Sherstnev, VV
Citation: Hh. Gao et al., High quality InAs grown by liquid phase epitaxy using gadolinium gettering, SEMIC SCI T, 14(5), 1999, pp. 441-445
Authors:
Krier, A
Gao, HH
Sherstnev, VV
Yakovlev, Y
Citation: A. Krier et al., High power 4.6 mu m light emitting diodes for CO detection, J PHYS D, 32(24), 1999, pp. 3117-3121