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Results: 1-25/55
Authors:
Rebohle, L
von Borany, J
Borchert, D
Frob, H
Gebel, T
Helm, M
Moller, W
Skorupa, W
Citation: L. Rebohle et al., Efficient blue light emission from silicon - The first integrated Si-basedoptocoupler, EL SOLID ST, 4(7), 2001, pp. G57-G60
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Yankov, RA
Rebohle, L
Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Rebohle, L
Skorupa, W
Yankov, RA
Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Authors:
Peeva, A
Fichtner, PFP
Behar, M
Koegler, R
Skorupa, W
Citation: A. Peeva et al., Helium implantation induced metal gettering in silicon at half of the projected ion range, NUCL INST B, 175, 2001, pp. 176-181
Authors:
da Silva, DL
Fichtner, PFP
Peeva, A
Behar, M
Koegler, R
Skorupa, W
Citation: Dl. Da Silva et al., The effects of implantation temperature on He bubble formation in silicon, NUCL INST B, 175, 2001, pp. 335-339
Authors:
Kogler, R
Peeva, A
Werner, P
Skorupa, W
Gosele, U
Citation: R. Kogler et al., Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination, NUCL INST B, 175, 2001, pp. 340-344
Authors:
Gebel, T
von Borany, J
Thees, HJ
Wittmaack, M
Stegemann, KH
Skorupa, W
Citation: T. Gebel et al., Non-volatile memories based on Si+-implanted gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 247-252
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range effect in proximity gettering of impurities in silicon, VACUUM, 62(2-3), 2001, pp. 309-313
Authors:
Panknin, D
Wirth, H
Mucklich, A
Skorupa, W
Citation: D. Panknin et al., Electrical and microstructural properties of highly boron-implantation doped 6H-SiC, J APPL PHYS, 89(6), 2001, pp. 3162-3167
Authors:
Peeva, A
Koegler, R
Brauer, G
Werner, P
Skorupa, W
Citation: A. Peeva et al., Metallic impurity gettering to defects remaining in the R-P/2 region of MeV-ion implanted and annealed silicon, MAT SC S PR, 3(4), 2000, pp. 297-301
Authors:
Kachurin, GA
Rebohle, L
Tyschenko, IE
Volodin, VA
Voelskow, M
Skorupa, W
Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Rebohle, L
Misiuk, A
Yankov, RA
Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Authors:
Serre, C
Perez-Rodriguez, A
Morante, JR
Esteve, J
Acero, MC
Kogler, R
Skorupa, W
Citation: C. Serre et al., Ion beam synthesis of polycrystalline SiC on SiO2 structures for MEMS applications, J MICROM M, 10(2), 2000, pp. 152-156
Authors:
Rebohle, L
von Borany, J
Frob, H
Skorupa, W
Citation: L. Rebohle et al., Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements, APP PHYS B, 71(2), 2000, pp. 131-151
Authors:
Hofgen, A
Heera, V
Mucklich, A
Eichhorn, F
Skorupa, W
Citation: A. Hofgen et al., Ion-beam-induced crystal grain nucleation in amorphous silicon carbide, NUCL INST B, 161, 2000, pp. 917-921
Authors:
Fichtner, PFP
Peeva, A
Behar, M
Azevedo, GD
Maltez, RL
Koegler, R
Skorupa, W
Citation: Pfp. Fichtner et al., He-induced cavity formation in silicon upon high-temperature implantation, NUCL INST B, 161, 2000, pp. 1038-1042
Authors:
Peeva, A
Kogler, R
Werner, P
de Mattos, AAD
Fichtner, PFP
Behar, M
Skorupa, W
Citation: A. Peeva et al., Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure, NUCL INST B, 161, 2000, pp. 1090-1094
Authors:
Panda, BK
Brauer, G
Skorupa, W
Kuriplach, J
Citation: Bk. Panda et al., Positron energy levels in semiconductors, PHYS REV B, 61(23), 2000, pp. 15848-15853
Authors:
Gueorguiev, YM
Kogler, R
Peeva, K
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range gettering of copper in high-energy ion-implanted silicon, J APPL PHYS, 88(11), 2000, pp. 6934-6936
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., High-energy ion-implantation-induced gettering of copper in silicon beyondthe projected ion range: The trans-projected-range effect, J APPL PHYS, 88(10), 2000, pp. 5645-5652
Authors:
Hatzopoulos, N
Skorupa, W
Siapkas, DI
Citation: N. Hatzopoulos et al., Double SIMOX structures formed by sequential high energy oxygen implantation into silicon, J ELCHEM SO, 147(1), 2000, pp. 354-362
Authors:
Rebohle, L
von Borany, J
Skorupa, W
Frob, H
Niedermeier, S
Citation: L. Rebohle et al., Strong photoluminescence of Sn-implanted thermally grown SiO2 layers, APPL PHYS L, 77(7), 2000, pp. 969-971
Authors:
Fichtner, PFP
Behar, M
Kaschny, JR
Peeva, A
Koegler, R
Skorupa, W
Citation: Pfp. Fichtner et al., Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon, APPL PHYS L, 77(7), 2000, pp. 972-974
Authors:
Heera, V
Fontaine, F
Skorupa, W
Pecz, B
Barna, A
Citation: V. Heera et al., Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond, APPL PHYS L, 77(2), 2000, pp. 226-228
Authors:
Kogler, R
Peeva, A
Anwand, W
Brauer, G
Skorupa, W
Werner, P
Gosele, U
Citation: R. Kogler et al., Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)], APPL PHYS L, 77(1), 2000, pp. 153-153