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Results: 1-25/42
Authors:
Emel'yanov, AM
Sobolev, NA
Yakimenko, AN
Citation: Am. Emel'Yanov et al., Capacitance-voltage characteristics of p-n structures based on (111)Si doped with erbium and oxygen, SEMICONDUCT, 35(3), 2001, pp. 316-320
Authors:
Sobolev, NA
Emel'yanov, AM
Nikolaev, YA
Citation: Na. Sobolev et al., Effect of the annealing temperature on erbium ion electroluminescence in Si :(Er,O) diodes with (111) substrate orientation, SEMICONDUCT, 35(10), 2001, pp. 1171-1174
Authors:
Cavaco, A
Sobolev, NA
Carmo, MC
Presting, H
Konig, U
Citation: A. Cavaco et al., Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon, J MAT S-M E, 12(4-6), 2001, pp. 241-243
Authors:
Pereira, RN
Gehlhoff, W
Sobolev, NA
Neves, AJ
Bimberg, D
Citation: Rn. Pereira et al., Determination of the W8 and AB5 defect levels in the diamond gap, J PHYS-COND, 13(40), 2001, pp. 8957-8964
Authors:
Emtsev, VV
Poloskin, DS
Shek, EI
Sobolev, NA
Kimerling, LC
Citation: Vv. Emtsev et al., Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 74-76
Authors:
Sobolev, NA
Emelyanov, AM
Nikolaev, YA
Andreev, BA
Krasilnik, ZF
Citation: Na. Sobolev et al., Holmium-related luminescence in crystalline silicon, MAT SCI E B, 81(1-3), 2001, pp. 176-178
Authors:
Sobolev, NA
Cavaco, A
Carmo, MC
Grundmann, M
Heinrichsdorff, F
Bimberg, D
Citation: Na. Sobolev et al., Enhanced radiation hardness of InAs/GaAs quantum dot structures, PHYS ST S-B, 224(1), 2001, pp. 93-96
Authors:
Alves, E
Sequeira, AD
Franco, N
da Silva, MF
Soares, JC
Sobolev, NA
Carmo, MC
Citation: E. Alves et al., Coherent amorphization of Ge/Si multilayers with ion beams, NUCL INST B, 178, 2001, pp. 279-282
Authors:
Kyutt, RN
Sobolev, NA
Nikolaev, YA
Vdovin, VI
Citation: Rn. Kyutt et al., Defect structure of erbium-doped < 111 > silicon layers formed by solid phase epitaxy, NUCL INST B, 173(3), 2001, pp. 319-325
Authors:
Ribbat, C
Sellin, R
Grundmann, M
Bimberg, D
Sobolev, NA
Carmo, MC
Citation: C. Ribbat et al., Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation, ELECTR LETT, 37(3), 2001, pp. 174-175
Authors:
Sobolev, NA
Emel'yanov, AM
Nikolaev, YA
Citation: Na. Sobolev et al., Influence of erbium ion implantation dose on characteristics of (111) Si :(Er, O) light-emitting diodes operating in p-n-junction breakdown mode, SEMICONDUCT, 34(9), 2000, pp. 1027-1030
Authors:
Emel'yanov, AM
Sobolev, NA
Trishenkov, MA
Khakuashev, PE
Citation: Am. Emel'Yanov et al., Tunnel light-emitting Si :(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions, SEMICONDUCT, 34(8), 2000, pp. 927-930
Authors:
Aleksandrov, OV
Zakhar'in, AO
Sobolev, NA
Nikolaev, YA
Citation: Ov. Aleksandrov et al., The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium, SEMICONDUCT, 34(5), 2000, pp. 510-513
Authors:
Aleksandrov, OV
Nikolaev, YA
Sobolev, NA
Citation: Ov. Aleksandrov et al., Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers, SEMICONDUCT, 34(1), 2000, pp. 1-5
Authors:
Neves, AJ
Pereira, R
Sobolev, NA
Nazare, MH
Gehlhoff, W
Naser, A
Kanda, H
Citation: Aj. Neves et al., New paramagnetic centers in annealed high-pressure synthetic diamond, DIAM RELAT, 9(3-6), 2000, pp. 1057-1060
Authors:
Sobolev, NA
Emel'yanov, AM
Kyutt, RN
Nikolaev, YA
Shek, EI
Aleksandrov, OV
Zachar'in, AO
Vdovin, VI
Makoviichuk, MI
Parshin, EO
Yakimenko, AN
Citation: Na. Sobolev et al., Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties, IAN FIZ, 64(2), 2000, pp. 258-263
Authors:
Sobolev, NA
Emel'yanov, AM
Nikolaev, YA
Vdovin, VI
Yakimenko, AN
Citation: Na. Sobolev et al., The electroluminescence of erbium ions at p-n junction breakdown and the properties of Si : Er : O light-emitting structures, IAN FIZ, 64(2), 2000, pp. 348-352
Authors:
Sobolev, NA
Emel'yanov, AM
Filin, YN
Melekh, BT
Nikolaev, YA
Yakimenko, AN
Citation: Na. Sobolev et al., Infrared photoluminescence from holmium ions in single-crystal silicon andholmium oxide, SEMIC SCI T, 15(6), 2000, pp. 511-513
Authors:
Mamedli, EM
Sobolev, NA
Citation: Em. Mamedli et Na. Sobolev, A method of ensuring fault tolerance in redundant computer control systems, AUT REMOT R, 61(2), 2000, pp. 337-347
Authors:
Bresler, MS
Gusev, OB
Sobolev, NA
Terukov, EI
Yassievich, IN
Zakharchenya, BP
Gregorkevich, T
Citation: Ms. Bresler et al., Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon, PHYS SOL ST, 41(5), 1999, pp. 770-773
Authors:
Sobolev, NA
Emel'yanov, AM
Nikolaev, YA
Citation: Na. Sobolev et al., Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O, SEMICONDUCT, 33(8), 1999, pp. 850-851
Authors:
Ammerlaan, CAJ
Thao, DTX
Gregorkiewicz, T
Sobolev, NA
Citation: Caj. Ammerlaan et al., Photoluminescence of erbium-doped silicon: excitation power dependence, SEMICONDUCT, 33(6), 1999, pp. 598-602
Authors:
Emtsev, VV
Emtsev, VV
Poloskin, DS
Sobolev, NA
Shek, EI
Michel, J
Kimerling, LC
Citation: Vv. Emtsev et al., Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, SEMICONDUCT, 33(6), 1999, pp. 603-605
Authors:
Aleksandrov, OV
Nikolaev, YA
Sobolev, NA
Sakharov, VI
Serenkov, IT
Kudryavtsev, YA
Citation: Ov. Aleksandrov et al., Redistribution of erbium during the crystallization of buried amorphous silicon layers, SEMICONDUCT, 33(6), 1999, pp. 606-609
Authors:
Sobolev, NA
Shek, EI
Emel'yanov, AM
Vdovin, VI
Yugova, TG
Citation: Na. Sobolev et al., Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon, SEMICONDUCT, 33(6), 1999, pp. 610-612