AAAAAA
Results:
1-24
|
Results: 24
Authors:
Normand, P
Beltsios, K
Kapetanakis, E
Tsoukalas, D
Travlos, T
Stoemenos, J
Van Den Berg, J
Zhang, S
Vieu, C
Launois, H
Gautier, J
Jourdan, F
Palun, L
Citation: P. Normand et al., Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films, NUCL INST B, 178, 2001, pp. 74-77
Authors:
Tsoukalas, D
Skarlatos, D
Stoemenos, J
Citation: D. Tsoukalas et al., Investigation of the influence of a dislocation loop layer on interstitialkinetics during surface oxidation of silicon, NUCL INST B, 178, 2001, pp. 180-183
Authors:
Eickhoff, M
Vouroutzis, N
Nielsen, A
Krotz, G
Stoemenos, J
Citation: M. Eickhoff et al., Oxidation dependence on defect density in 3C-SiC films, J ELCHEM SO, 148(6), 2001, pp. G336-G343
Authors:
Moller, H
Krotz, G
Eickhoff, M
Nielsen, A
Papaioannou, V
Stoemenos, J
Citation: H. Moller et al., Suppression of Si cavities at the SiC/Si interface during epitaxial growthof 3C-SiC on silicon-on-insulator, J ELCHEM SO, 148(1), 2001, pp. G16-G24
Authors:
Kiriakidis, G
Moschovis, K
Uusimaa, P
Salokatve, A
Pessa, M
Stoemenos, J
Citation: G. Kiriakidis et al., Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue-green laser diodes, THIN SOL FI, 360(1-2), 2000, pp. 195-204
Authors:
Angelis, CT
Dimitriadis, CA
Miyasaka, M
Farmakis, FV
Kamarinos, G
Brini, J
Stoemenos, J
Citation: Ct. Angelis et al., Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (vol 86, pg 4600, 1999), J APPL PHYS, 87(3), 2000, pp. 1588-1588
Authors:
Tsoukalas, D
Skarlatos, D
Stoemenos, J
Citation: D. Tsoukalas et al., Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique, J APPL PHYS, 87(12), 2000, pp. 8380-8384
Authors:
Heera, V
Reuther, H
Stoemenos, J
Pecz, B
Citation: V. Heera et al., Phase formation due to high dose aluminum implantation into silicon carbide, J APPL PHYS, 87(1), 2000, pp. 78-85
Authors:
Kapetanakis, E
Normand, P
Tsoukalas, D
Beltsios, K
Stoemenos, J
Zhang, S
van den Berg, J
Citation: E. Kapetanakis et al., Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing, APPL PHYS L, 77(21), 2000, pp. 3450-3452
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, E
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at 500 degrees C, MAT SCI E B, 61-2, 1999, pp. 358-362
Authors:
Krotz, G
Moller, H
Eickhoff, M
Zappe, S
Ziermann, R
Obermeier, E
Stoemenos, J
Citation: G. Krotz et al., Heteroepitaxial growth of 3C-SiC on SOI for sensor applications, MAT SCI E B, 61-2, 1999, pp. 516-521
Authors:
Zappe, S
Obermeier, E
Stoemenos, J
Moller, H
Krotz, G
Wirth, H
Skorupa, W
Citation: S. Zappe et al., Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer, MAT SCI E B, 61-2, 1999, pp. 522-525
Authors:
Papaioannou, V
Moller, H
Rapp, M
Veoglmeier, L
Eickhoff, M
Krotz, G
Stoemenos, J
Citation: V. Papaioannou et al., The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD, MAT SCI E B, 61-2, 1999, pp. 539-543
Authors:
Moller, H
Eickhoff, M
Vogelmeier, L
Rapp, M
Krotz, G
Papaioannou, V
Stoemenos, J
Citation: H. Moller et al., Influence of the silicon overlayer thickness of SOI unibond substrates on beta-SIC heteroepitaxy, MAT SCI E B, 61-2, 1999, pp. 567-570
Authors:
Logothetidis, S
Gioti, M
Charitidis, C
Patsalas, P
Arvanitidis, J
Stoemenos, J
Citation: S. Logothetidis et al., Stability, enhancement of elastic properties and structure of multilayeredamorphous carbon films, APPL SURF S, 139, 1999, pp. 244-249
Authors:
Mariucci, L
Carluccio, R
Pecora, A
Foglietti, V
Fortunato, G
Legagneux, P
Pribat, D
Della Sala, D
Stoemenos, J
Citation: L. Mariucci et al., Lateral growth control in excimer laser crystallized polysilicon, THIN SOL FI, 337(1-2), 1999, pp. 137-142
Authors:
Komninou, P
Stoemenos, J
Nouet, G
Karakostas, T
Citation: P. Komninou et al., Gold films epitaxially grown by diffusion at the 3C-SiC/Si interface, J CRYST GR, 203(1-2), 1999, pp. 103-112
Authors:
Angelis, CT
Dimitriadis, CA
Miyasaka, M
Farmakis, FV
Kamarinos, G
Brini, J
Stoemenos, J
Citation: Ct. Angelis et al., Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors, J APPL PHYS, 86(8), 1999, pp. 4600-4606
Authors:
Pecz, B
di Forte-Poisson, MA
Huet, F
Radnoczi, G
Toth, L
Papaioannou, V
Stoemenos, J
Citation: B. Pecz et al., Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition, J APPL PHYS, 86(11), 1999, pp. 6059-6067
Authors:
Miyasaka, M
Stoemenos, J
Citation: M. Miyasaka et J. Stoemenos, Excimer laser annealing of amorphous and solid-phase-crystallized silicon films, J APPL PHYS, 86(10), 1999, pp. 5556-5565
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, M
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures, J APPL PHYS, 85(3), 1999, pp. 1378-1386
Authors:
Stoemenos, J
Pecz, B
Heera, V
Citation: J. Stoemenos et al., Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al+ implantation, APPL PHYS L, 74(18), 1999, pp. 2602-2604
Authors:
Normand, P
Tsoukalas, D
Kapetanakis, E
Van den Berg, JA
Armour, DG
Stoemenos, J
Vieu, C
Citation: P. Normand et al., Formation of 2-D arrays of silicon nanocrystals in thin SiO2 films by very-low energy Si+ ion implantation, EL SOLID ST, 1(2), 1998, pp. 88-90
Authors:
Papaioannou, V
Stoemenos, J
Di Cioccio, L
David, D
Pudda, C
Citation: V. Papaioannou et al., Study of 4H- and 6H-SiC films grown on off-oriented (0001) SIC substrates, J CRYST GR, 194(3-4), 1998, pp. 342-352
Risultati:
1-24
|