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Results: 1-12 |
Results: 12
Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region
Authors: Zheng, XG Sun, X Wang, S Kinsey, GS Holmes, AL Streetman, BG Campbell, JC
Citation: Xg. Zheng et al., Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region, APPL PHYS L, 78(24), 2001, pp. 3833-3835
High-Speed and low-noise avalanche photodiode operating at 1.06 mu m
Authors: Yuan, P Baklenov, O Nie, H Holmes, AL Streetman, BG Campbell, JC
Citation: P. Yuan et al., High-Speed and low-noise avalanche photodiode operating at 1.06 mu m, IEEE S T QU, 6(3), 2000, pp. 422-425
Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode
Authors: Kinsey, GS Hansing, CC Holmes, AL Streetman, BG Campbell, JC Dentai, AG
Citation: Gs. Kinsey et al., Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode, IEEE PHOTON, 12(4), 2000, pp. 416-418
Growth of GaNAs by molecular beam expitaxy using a N-2/Ar rf plasma
Authors: Gotthold, DW Govindaraju, S Mattord, T Holmes, AL Streetman, BG
Citation: Dw. Gotthold et al., Growth of GaNAs by molecular beam expitaxy using a N-2/Ar rf plasma, J VAC SCI A, 18(2), 2000, pp. 461-464
Temperature dependence of the ionization coefficients of AlxGa1-xAs
Authors: Zheng, XG Yuan, P Sun, X Kinsey, GS Holmes, AL Streetman, BG Campbell, JC
Citation: Xg. Zheng et al., Temperature dependence of the ionization coefficients of AlxGa1-xAs, IEEE J Q EL, 36(10), 2000, pp. 1168-1173
GaNAs avalanche photodiode operating at 0.94 mu m
Authors: Kinsey, GS Gotthold, DW Holmes, AL Streetman, BG Campbell, JC
Citation: Gs. Kinsey et al., GaNAs avalanche photodiode operating at 0.94 mu m, APPL PHYS L, 76(20), 2000, pp. 2824-2825
Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy
Authors: Baklenov, O Nie, H Campbell, JC Streetman, BG Holmes, AL
Citation: O. Baklenov et al., Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy, J VAC SCI B, 17(3), 1999, pp. 1124-1126
Substrate preparation and interface grading in InGaAs InAlAs photodiodes grown on InP by molecular-beam epitaxy
Authors: Lenox, C Nie, H Kinsey, G Hansing, C Campbell, JC Holmes, AL Streetman, BG
Citation: C. Lenox et al., Substrate preparation and interface grading in InGaAs InAlAs photodiodes grown on InP by molecular-beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1175-1179
Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
Authors: Lenox, C Nie, H Yuan, P Kinsey, G Homles, AL Streetman, BG Campbell, JC
Citation: C. Lenox et al., Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz, IEEE PHOTON, 11(9), 1999, pp. 1162-1164
Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states
Authors: Htoon, H Yu, HB Kulik, D Keto, JW Baklenov, O Holmes, AL Streetman, BG Shih, CK
Citation: H. Htoon et al., Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states, PHYS REV B, 60(15), 1999, pp. 11026-11029
Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study
Authors: Chao, KJ Liu, N Shih, CK Gotthold, DW Streetman, BG
Citation: Kj. Chao et al., Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study, APPL PHYS L, 75(12), 1999, pp. 1703-1705
Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors
Authors: Lenox, C Nie, H Kinsey, G Yuan, P Holmes, AL Streetman, BG Campbell, JC
Citation: C. Lenox et al., Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors, APPL PHYS L, 73(23), 1998, pp. 3405-3407
Risultati: 1-12 |