Authors:
LIU Q
LAKNER H
MENDORF C
TAUDT W
HEUKEN M
HEIME K
KUBALEK E
Citation: Q. Liu et al., THE INFLUENCE OF STRUCTURAL DEFECTS IN ZNSE GAAS HETEROSTRUCTURES ON LUMINESCENCE PROPERTIES/, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2421-2425
Authors:
TAUDT W
XU J
HARDT A
KORFER H
LIU Q
HAMADEH H
LAKNER H
WOITOK J
HEUKEN M
Citation: W. Taudt et al., OPTIMIZATION OF PRE-EPITAXIAL PROCESSES TO OBTAIN HIGH-QUALITY ZNSE GAAS HETEROINTERFACES GROWN IN A LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM/, Journal of crystal growth, 191(4), 1998, pp. 663-672
Authors:
GERMAIN M
ELYACOUBI M
EVRARD R
TAUDT W
HEUKEN M
Citation: M. Germain et al., MEASUREMENTS OF TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT ON MOVPE-GROWN AU ZNSE/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 199-202
Authors:
GURSKII AL
RAKOVICH YP
KARPUK MM
GLADYSHCHUK AA
YABLONSKII GP
HAMADEH H
TAUDT W
HEUKEN M
Citation: Al. Gurskii et al., STRUCTURE OF FREE-EXCITON LUMINESCENCE SPECTRA IN HETEROEPITAXIAL ZNSE GAAS/, Journal of crystal growth, 185, 1998, pp. 1100-1104
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
HAMADEH H
SOLLNER J
TAUDT W
HEUKEN M
Citation: Gp. Yablonskii et al., OPTICALLY-PUMPED LASING OF DOPED ZNSE EPITAXIAL LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Physica status solidi. a, Applied research, 159(2), 1997, pp. 543-557
Authors:
GURSKII AL
MARKO IP
YUVCHENKO VN
YABLONSKII GP
HAMADEH H
TAUDT W
SOLLNER J
KALISCH H
HEUKEN M
Citation: Al. Gurskii et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE OF MOVPE-GROWN UNDOPED AND NITROGEN-DOPED ZNSE, Journal of crystal growth, 174(1-4), 1997, pp. 757-762
Authors:
HEUKEN M
SOLLNER J
TAUDT W
LAMPE S
HAMADEH H
Citation: M. Heuken et al., METALORGANIC CHEMICAL-VAPOR EPITAXY AND DOPING OF ZNMGSSE HETEROSTRUCTURES FOR BLUE-EMITTING DEVICES, Journal of crystal growth, 170(1-4), 1997, pp. 30-38
Authors:
TAUDT W
HARDT A
LAMPE S
HAMADEH H
HEUKEN M
Citation: W. Taudt et al., NITROGEN AS CARRIER GAS FOR THE GROWTH OF ZNSE AND ZNSEN IN PLASMA-ENHANCED METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 491-496
Authors:
GURSKII AL
TAUDT W
LAMPE S
HAMADEH H
SAUERLANDER F
GERMAIN M
BASILAVECCHIA M
EVRARD R
YABLONSKII GP
HEUKEN M
Citation: Al. Gurskii et al., OPTICAL AND ELECTRICAL-PROPERTIES OF MOVPE-GROWN ZNSEN USING TRIALLYLAMINE AS A NITROGEN PRECURSOR, Journal of crystal growth, 170(1-4), 1997, pp. 533-536
Authors:
PROSCH G
HELLIG K
BEYER R
SCHNEIDER A
BURGHARDT H
TAUDT W
HEUKEN M
ZAHN DRT
Citation: G. Prosch et al., DEFECTS IN MOVPE GROWN ZNSE ON GAAS STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Journal of crystal growth, 170(1-4), 1997, pp. 537-541
Authors:
GURSKII AL
GAVRILENKO AN
LUTSENKO EV
YABLONSKII GP
TAUDT W
HAMADEH H
WACHTENDORF B
SOLLNER J
SCHMORANZER J
HEUKEN M
Citation: Al. Gurskii et al., TEMPERATURE AND EXCITATION DEPENDENT PHOTOLUMINESCENCE OF UNDOPED ANDNITROGEN-DOPED ZNSE EPILAYERS, Physica status solidi. b, Basic research, 193(1), 1996, pp. 257-267
Authors:
TAUDT W
LAMPE S
SAUERLANDER F
SOLLNER J
HAMADEH H
HEUKEN M
JONES AC
RUSHWORTH S
OBRIEN P
MALIK MA
Citation: W. Taudt et al., NITROGEN DOPING OF ZNSE WITH TRIMETHYLSILYLAZIDE, TRIALLYLAMINE OR BISDITRIMETHYLSILYLAMIDOZINC DURING METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 169(2), 1996, pp. 243-249
Authors:
LAMPE S
GERMAIN M
SOLLNER J
TAUDT W
EVRARD R
HEUKEN M
Citation: S. Lampe et al., ELECTRICAL CHARACTERIZATION OF DOPED ZNSE-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 293-297
Authors:
HEITZ R
MOLL E
KUTZER V
WIESMANN D
LUMMER B
HOFFMANN A
BROSER I
BAUME P
TAUDT W
SOLLNER J
HEUKEN M
Citation: R. Heitz et al., INFLUENCE OF COMPENSATION ON THE LUMINESCENCE OF NITROGEN-DOPED ZNSE EPILAYERS GROWN BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 307-311
Authors:
TAUDT W
WACHTENDORF B
SAUERLANDER F
HAMADEH H
LAMPE S
HEUKEN M
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM, Journal of electronic materials, 24(11), 1995, pp. 1671-1675
Authors:
BOEMARE C
GIL B
ASSUNCAO M
SOLLNER J
TAUDT W
HEUKEN M
NAZARE MH
Citation: C. Boemare et al., OBSERVATION OF FABRY-PEROT MODES IN THE UPPER BRANCH OF THE POLARITONIN ZNSE-GAAS EPILAYERS, Physical review. B, Condensed matter, 51(12), 1995, pp. 7954-7957
Authors:
GURSKII AL
VAKARELSKA K
TAUDT W
WACHTENDORF B
SOLLNER J
WAHID A
HEUKEN M
Citation: Al. Gurskii et al., OXYGEN AND TELLURIUM IMPURITIES IN ZINC SELENIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 592-598
Authors:
TAUDT W
WACHTENDORF B
BECCARD R
WAHID A
HEUKEN M
GURSKII AL
VAKARELSKA K
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM, Journal of crystal growth, 145(1-4), 1994, pp. 582-588
Authors:
HOFFMANN A
HEITZ R
LUMMER B
FRICKE C
KUTZER V
BROSER I
TAUDT W
GLEITSMANN G
HEUKEN M
Citation: A. Hoffmann et al., INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 379-384
Authors:
TAUDT W
SCHNEIDER A
HEUKEN M
FRICKE C
HOFFMANN A
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND PLASMA-ENHANCED NITROGEN DOPING OF ZNSE BYMETALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 418-424