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Results:
1-25
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Results: 25
Authors:
DOSSANTOS MC
TESCHKE O
Citation: Mc. Dossantos et O. Teschke, ALIGNED PIPE ARRAYS FORMATION BY SILICON ANODIC ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2105-2109
Authors:
TESCHKE O
SOUZA EF
Citation: O. Teschke et Ef. Souza, ATOMIC-FORCE MICROSCOPY IMPROVED RESOLUTION EMPLOYING LARGE SCANNING SPEEDS - EFFECTS OF THE DOUBLE RELAXATION-TIME, Review of scientific instruments, 69(10), 1998, pp. 3588-3592
Authors:
DESOUZA EF
DOUGLAS RA
TESCHKE O
Citation: Ef. Desouza et al., ATOMIC-FORCE MICROSCOPIC IMAGING IN LIQUIDS - EFFECTS OF THE FILM COMPRESSED BETWEEN THE SUBSTRATE AND THE TIP, Langmuir, 13(23), 1997, pp. 6012-6017
Authors:
KLEINKE MU
KNOBEL M
BONUGLI LO
TESCHKE O
Citation: Mu. Kleinke et al., AMORPHOUS-ALLOYS AS ANODIC AND CATHODIC MATERIALS FOR ALKALINE WATER ELECTROLYSIS, International journal of hydrogen energy, 22(8), 1997, pp. 759-762
Authors:
RIBEIRO E
CERDEIRA F
TESCHKE O
Citation: E. Ribeiro et al., TRIDIMENSION STRUCTURAL CHARACTERIZATION OF POROUS SILICON BY TRANSMISSION ELECTRON-MICROSCOPY AND RAMAN-SCATTERING, Solid state communications, 101(5), 1997, pp. 327-331
Authors:
TESCHKE O
SOARES DM
NUNES LAO
Citation: O. Teschke et al., THE FORMATION OF NANOSTRUCTURES ON SILICON SURFACES IN THE PRESENCE OF HYDROGEN, Applied physics letters, 70(21), 1997, pp. 2840-2842
Authors:
TESCHKE O
DOUGLAS RA
PROLLA TA
Citation: O. Teschke et al., VISCOUS DRAG EFFECT ON IMAGING OF LINEARIZED PLASMID DEOXYRIBONUCLEIC-ACID IN LIQUID-MEDIUM WITH THE ATOMIC-FORCE MICROSCOPE, Applied physics letters, 70(15), 1997, pp. 1977-1979
Authors:
SASSAKI RM
DOUGLAS RA
KLEINKE MU
TESCHKE O
Citation: Rm. Sassaki et al., STRUCTURE IMAGING BY ATOMIC-FORCE MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY OF DIFFERENT LIGHT-EMITTING SPECIES OF POROUS SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2432-2437
Authors:
SOARES DM
TESCHKE O
DOSSANTOS MC
Citation: Dm. Soares et al., DYNAMICS OF THE HYDROGEN OXIDATION AND SILICON DISSOLUTION REACTIONS IN THE FORMATION OF POROUS SILICON, Langmuir, 12(12), 1996, pp. 2875-2877
Authors:
COTTA MA
DECARVALHO MMG
PUDENZI MAA
LANDERS KMI
DESOUZA CF
MARTINS RB
LANDERS R
TESCHKE O
Citation: Ma. Cotta et al., SURFACE MORPHOLOGIES OF BE-DOPED HOMOEPITAXIAL INP FILMS, Journal of crystal growth, 164(1-4), 1996, pp. 409-414
Authors:
TESCHKE O
SOARES DM
Citation: O. Teschke et Dm. Soares, ISOLATED SUBMICROMETER FILAMENTS FORMED BY SILICON ANODIZATION IN HF SOLUTIONS, Journal of the Electrochemical Society, 143(5), 1996, pp. 100-102
Authors:
SASSAKI RM
GALEMBECK F
TESCHKE O
Citation: Rm. Sassaki et al., ON SURFACE-PLASMONS IN POROUS SILICON - MEASUREMENTS OF THE ELECTRON-ENERGY-LOSS IN ETCHED SILICON NANOCRYSTALS, Applied physics letters, 69(2), 1996, pp. 206-208
Authors:
TESCHKE O
Citation: O. Teschke, VISUALIZATION OF NANOSTRUCTURED POROUS SILICON BY A COMBINATION OF TRANSMISSION ELECTRON-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY, Applied physics letters, 68(15), 1996, pp. 2129-2131
Authors:
TESCHKE O
KLEINKE MU
GALEMBECK F
Citation: O. Teschke et al., MECHANICAL INSTABILITY OF SWOLLEN PVC FILMS, Journal of applied polymer science, 57(13), 1995, pp. 1567-1573
Authors:
TESCHKE O
DOSSANTOS MC
KLEINKE MU
SOARES DM
GALVAO DS
Citation: O. Teschke et al., SPATIALLY-VARIABLE REACTION IN THE FORMATION OF ANODICALLY GROWN POROUS SILICON STRUCTURES, Journal of applied physics, 78(1), 1995, pp. 590-592
Authors:
SOARES DM
DOSSANTOS MC
TESCHKE O
Citation: Dm. Soares et al., ANODICALLY GROWN POROUS SILICON STRUCTURE - FORMATION MECHANISMS, Chemical physics letters, 242(1-2), 1995, pp. 202-206
Authors:
COTTA MA
DECARVALHO MMG
PUDENZI MAA
LANDERS KMI
DESOUZA CF
LANDERS R
TESCHKE O
Citation: Ma. Cotta et al., BE INCORPORATION AND SURFACE MORPHOLOGIES IN HOMOEPITAXIAL INP FILMS, Applied physics letters, 67(8), 1995, pp. 1122-1124
Authors:
SOARES DM
KLEINKE MU
TORRIANI I
TESCHKE O
Citation: Dm. Soares et al., DEACTIVATION MECHANISM OF NICKEL CATHODES IN ALKALINE MEDIA, International journal of hydrogen energy, 19(7), 1994, pp. 573-578
Authors:
TESCHKE O
GALEMBECK F
GONCALVES MC
DAVANZO CU
Citation: O. Teschke et al., PHOTOLUMINESCENCE SPECTRUM REDSHIFTING OF POROUS SILICON BY A POLYMERIC CARBON LAYER, Applied physics letters, 64(26), 1994, pp. 3590-3592
Authors:
TESCHKE O
Citation: O. Teschke, SPATIAL-DISTRIBUTION OF OXYGEN IN LUMINESCENT POROUS SILICON FILMS, Applied physics letters, 64(15), 1994, pp. 1986-1988
Authors:
TESCHKE O
Citation: O. Teschke, SPATIAL-TEMPORAL STRUCTURES IN IRON ELECTRODIC REACTIONS, Journal of physics. Condensed matter, 5, 1993, pp. 201-202
Authors:
TESCHKE O
KLEINKE MU
GALEMBECK F
Citation: O. Teschke et al., BUCKLING OF ANODIC FILMS ON ALUMINUM - DETERMINATION OF PLASTIC-DEFORMATION ENERGY OF COATINGS, Journal of the Electrochemical Society, 140(6), 1993, pp. 1667-1671
Authors:
TESCHKE O
ALVAREZ F
TESSLER L
KLEINKE MU
Citation: O. Teschke et al., NANOSIZE STRUCTURES CONNECTIVITY IN POROUS SILICON AND ITS RELATION TO PHOTOLUMINESCENCE EFFICIENCY, Applied physics letters, 63(14), 1993, pp. 1927-1929
Authors:
TESCHKE O
GONCALVES MC
GALEMBECK F
Citation: O. Teschke et al., ETCHING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OFNANOSTRUCTURE OF VISIBLE LUMINESCENT POROUS SILICON, Applied physics letters, 63(10), 1993, pp. 1348-1350
Authors:
TESSLER LR
ALVAREZ F
TESCHKE O
Citation: Lr. Tessler et al., TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON - EVIDENCE FOR TUNNELING LIMITED RECOMBINATION IN A BAND OF LOCALIZED STATES, Applied physics letters, 62(19), 1993, pp. 2381-2383
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