AAAAAA
Results: 1-25/41
Authors:
GOLOVAN LA
KASHKAROV PK
SOSNOVSKIKH YN
TIMOSHENKO VY
CHECHENIN NG
LAKEENKOV VM
Citation: La. Golovan et al., INVESTIGATION OF LASER-INDUCED DEFECT FORMATION IN CDTE CRYSTALS BY RUTHERFORD BACKSCATTERING, Physics of the solid state, 40(2), 1998, pp. 187-189
Authors:
USHAKOV VV
DRAVIN VA
MELNIK NN
ZAVARITSKAYA TV
LOIKO NN
KARAVANSKII VA
KONSTANTINOVA EA
TIMOSHENKO VY
Citation: Vv. Ushakov et al., ION-IMPLANTATION OF POROUS GALLIUM-PHOSPHIDE, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 886-890
Authors:
TIMOSHENKO VY
KONSTANTINOVA EA
DITTRICH T
Citation: Vy. Timoshenko et al., INVESTIGATION OF THE PHOTOVOLTAGE IN POR-SI P-SI STRUCTURES BY THE PULSED-PHOTOVOLTAGE METHOD/, Semiconductors, 32(5), 1998, pp. 549-554
Authors:
VOLKOV RV
GORDIENKO VM
DZHIDZHOEV MS
KAMENEV BV
KASHKAROV PK
PONOMAREV YV
SAVELEV AB
TIMOSHENKO VY
SHASHKOV AA
Citation: Rv. Volkov et al., GENERATION OF HARD X-RAY-RADIATION BY IRRADIATION OF POROUS SILICON WITH ULTRAINTENSE FEMTOSECOND LASER-PULSES, Quantum electronics, 28(1), 1998, pp. 1-2
Authors:
SAVELEV AB
BABAEV VG
DZHIDZHOEV MS
GORDIENKO VM
JOUKOV MA
SHASHKOV AA
TIMOSHENKO VY
VOLKOV RV
Citation: Ab. Savelev et al., FEMTOSECOND PLASMA IN SOLID TARGETS WITH REDUCED THERMAL CONDUCTION -X-RAY-PRODUCTION AND 2ND-HARMONIC GENERATION, Laser physics, 8(3), 1998, pp. 637-641
Authors:
TIMOSHENKO VY
RAPPICH J
DITTRICH T
Citation: Vy. Timoshenko et al., EXPRESS CHARACTERIZATION OF INDIRECT SEMICONDUCTOR SURFACES BY IN-SITU PHOTOLUMINESCENCE DURING CHEMICAL AND ELECTROCHEMICAL TREATMENTS, Applied surface science, 123, 1998, pp. 111-114
Authors:
KASHKAROV PK
KAMENEV BV
KONSTANTINOVA EA
EFIMOVA AI
PAVLIKOV AV
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., DYNAMICS OF NONEQUILIBRIUM CHARGE-CARRIERS IN SILICON QUANTUM WIRES, Uspehi fiziceskih nauk, 168(5), 1998, pp. 577-582
Authors:
GOLOVAN LA
MARKOV BA
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., EVAPORATION EFFECT ON LASER-INDUCED SOLID-LIQUID PHASE-TRANSITIONS INCDTE AND HGCDTE, Solid state communications, 108(10), 1998, pp. 707-712
Authors:
DITTRICH T
TIMOSHENKO VY
RAPPICH J
Citation: T. Dittrich et al., UNUSUAL STABILIZATION OF SI SURFACES DURING ROUGHENING IN FLUORIDE SOLUTION, Applied physics letters, 72(13), 1998, pp. 1635-1637
Authors:
TIMOSHENKO VY
RAPPICH J
DITTRICH T
Citation: Vy. Timoshenko et al., IN-SITU PHOTOLUMINESCENCE ANALYSIS OF NONRADIATIVE RECOMBINATION ON SILICON SURFACES TREATED IN FLUORIDE SOLUTION, JPN J A P 2, 36(1AB), 1997, pp. 58-60
Authors:
USHAKOV VV
DRAVIN VA
MELNIK NN
KARAVANSKII VA
KONSTANTINOVA EA
TIMOSHENKO VY
Citation: Vv. Ushakov et al., RADIATION HARDNESS OF POROUS SILICON, Semiconductors, 31(9), 1997, pp. 966-969
Authors:
GOLOVAN LA
KASHKAROV PK
TIMOSHENKO VY
LAKEENKOV VM
Citation: La. Golovan et al., EFFECT OF PULSED-LASER IRRADIATION ON THE OPTICAL CHARACTERISTICS ANDPHOTOCONDUCTIVITY OF THE SOLID-SOLUTIONS CDHGTE, Semiconductors, 31(8), 1997, pp. 793-796
Authors:
KASHKAROV PK
KONSTANTINOVA EA
PETROVA SA
TIMOSHENKO VY
YUNOVICH AE
Citation: Pk. Kashkarov et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 31(6), 1997, pp. 639-641
Authors:
OBRAZTSOV AN
TIMOSHENKO VY
OKUSHI H
WATANABE H
Citation: An. Obraztsov et al., PHOTOACOUSTIC-SPECTROSCOPY OF POROUS SILICON, Semiconductors, 31(5), 1997, pp. 534-536
Authors:
OBRAZTSOV AN
PAVLOVSKY IY
TIMOSHENKO VY
Citation: An. Obraztsov et al., DIAMOND SEED INCORPORATION BY ELECTROCHEMICAL TREATMENT OF SILICON SUBSTRATE, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1629-1632
Authors:
OBRAZTSOV AN
OKUSHI H
WATANABE H
TIMOSHENKO VY
Citation: An. Obraztsov et al., OPTICAL-ABSORPTION IN POROUS SILICON STUDIED BY PHOTOACOUSTIC-SPECTROSCOPY, Physica status solidi. b, Basic research, 203(2), 1997, pp. 565-569
Authors:
BABAEV VG
DZHIDZHOEV MS
GORDIENKO VM
JOUKOV MA
SAVELEV AB
TIMOSHENKO VY
SHASHKOV AA
VOLKOV RV
Citation: Vg. Babaev et al., X-RAY-PRODUCTION AND 2ND-HARMONIC GENERATION BY SUPERINTENSE FEMTOSECOND LASER-PULSES IN THE SOLIDS WITH RESTRICTED THERMAL CONDUCTION, Journal of nonlinear optical physics and materials, 6(4), 1997, pp. 495-505
Authors:
KASHKAROV PK
KONSTANTINOVA EA
PAVLIKOV AV
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 123-129
Authors:
RAPPICH J
TIMOSHENKO VY
DITTRICH T
Citation: J. Rappich et al., IN-SITU MONITORING OF ELECTROCHEMICAL PROCESSES AT THE (100)P-SI AQUEOUS NH4(F) ELECTROLYTE INTERFACE BY PHOTOLUMINESCENCE/, Journal of the Electrochemical Society, 144(2), 1997, pp. 493-496
Authors:
RAPPICH J
TIMOSHENKO VY
DITTRICH T
Citation: J. Rappich et al., CORRELATION BETWEEN SURFACE NONRADIATIVE RECOMBINATION AND CURRENT OSCILLATION AT P-SI(100) DURING ELECTROPOLISHING IN FLUORIDE SOLUTION, Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(1), 1997, pp. 139-142
Authors:
DITTRICH T
RAPPICH J
TIMOSHENKO VY
Citation: T. Dittrich et al., BLOCKING EFFECT OF CHARGE-TRANSFER AT THE POROUS SILICON SILICON INTERFACE/, Applied physics letters, 70(20), 1997, pp. 2705-2707
Authors:
ZOTEEV AV
KASHKAROV PK
OBRAZTSOV AN
TIMOSHENKO VY
Citation: Av. Zoteev et al., ELECTROCHEMICAL FORMATION AND OPTICAL-PROPERTIES OF POROUS GALLIUM-PHOSPHIDE, Semiconductors, 30(8), 1996, pp. 775-777
Authors:
KASHKAROV PK
KONSTANTINOVA EA
TIMOSHENKO VY
Citation: Pk. Kashkarov et al., MECHANISMS FOR THE EFFECT OF ADSORPTION OF MOLECULES ON RECOMBINATIONPROCESSES IN POROUS SILICON, Semiconductors, 30(8), 1996, pp. 778-783
Authors:
GOLOVAN LA
KASHKAROV PK
TIMOSHENKO VY
Citation: La. Golovan et al., LASER-INDUCED MELTING AND DEFECT FORMATION IN CADMIUM TELLURIDE, Laser physics, 6(5), 1996, pp. 925-927
Authors:
DITTRICH T
KLIEFOTH K
SIEBER I
RAPPICH J
RAUSCHER S
TIMOSHENKO VY
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THIN AU NANOPOROUS-SI/N-SI STRUCTURES/, Thin solid films, 276(1-2), 1996, pp. 183-186