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Results: 1-17 |
Results: 17
SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS
Authors: KACHURIN GA TYSCHENKO IE REBOHLE L SKORUPA W YANKOV RA FROEB H BOEHME T LEO K
Citation: Ga. Kachurin et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS, Semiconductors, 32(4), 1998, pp. 392-396
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE
Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING
Authors: TYSCHENKO IE REBOHLE L YANKOV RA SKORUPA W MISIUK A
Citation: Ie. Tyschenko et al., ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING, Applied physics letters, 73(10), 1998, pp. 1418-1420
PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKII AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME, Semiconductors, 31(6), 1997, pp. 626-630
ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING
Authors: KACHURIN GA ZHURAVLEV KS PAZDNIKOV NA LEIER AF TYSCHENKO IE VOLODIN VA SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 583-586
VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKY AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 571-574
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS
Authors: REBOHLE L VONBORANY J YANKOV RA SKORUPA W TYSCHENKO IE FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION
Authors: GADIYAK GV KACHURIN GA TYSCHENKO IE
Citation: Gv. Gadiyak et al., EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION, Semiconductors, 30(11), 1996, pp. 1019-1023
FORMATION OF ELECTRICALLY ACTIVE-CENTERS BEYOND THE STOPPING RANGES OF IONS IMPLANTED IN HEATED SILICON
Authors: ANTONOVA IV KACHURIN GA TYSCHENKO IE SHAIMEEV SS
Citation: Iv. Antonova et al., FORMATION OF ELECTRICALLY ACTIVE-CENTERS BEYOND THE STOPPING RANGES OF IONS IMPLANTED IN HEATED SILICON, Semiconductors, 30(11), 1996, pp. 1051-1054
A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()
Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS
Authors: SKORUPA W YANKOV RA TYSCHENKO IE FROB H BOHME T LEO K
Citation: W. Skorupa et al., ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 68(17), 1996, pp. 2410-2412
EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS
Authors: KACHURIN GA TYSCHENKO IE TIIS SA PLOTNIKOV AE
Citation: Ga. Kachurin et al., EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS, Semiconductors, 29(3), 1995, pp. 256-258
NEUTRALIZATION OF BORON IN SILICON BY HIGH-TEMPERATURE BOMBARDMENT WITH ARGON IONS
Authors: KACHURIN GA OBODNIKOV VI PRINTS VY TYSCHENKO IE
Citation: Ga. Kachurin et al., NEUTRALIZATION OF BORON IN SILICON BY HIGH-TEMPERATURE BOMBARDMENT WITH ARGON IONS, Semiconductors, 28(3), 1994, pp. 313-316
BEHAVIOR OF BORON AND NITROGEN IN A SURFACE-LAYER OF SILICON DURING SYNTHESIS OF BURIED LAYERS BY IMPLANTATION OF N+ IONS
Authors: KACHURIN GA TYSCHENKO IE
Citation: Ga. Kachurin et Ie. Tyschenko, BEHAVIOR OF BORON AND NITROGEN IN A SURFACE-LAYER OF SILICON DURING SYNTHESIS OF BURIED LAYERS BY IMPLANTATION OF N+ IONS, Semiconductors, 27(7), 1993, pp. 658-662
USE OF THE DLTS METHOD TO STUDY DEFECTS FORMED IN SILICON AS A RESULTOF BOMBARDING IT WITH N-TEMPERATURES( IONS AT HIGH)
Authors: ANTONOVA IV SHAIMEEV SS TYSCHENKO IE
Citation: Iv. Antonova et al., USE OF THE DLTS METHOD TO STUDY DEFECTS FORMED IN SILICON AS A RESULTOF BOMBARDING IT WITH N-TEMPERATURES( IONS AT HIGH), Semiconductors, 27(2), 1993, pp. 130-133
ROLES OF IMPLANTATION TEMPERATURE AND ION DOSE-RATE IN ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS
Authors: KACHURIN GA AKHMETOV VD TYSCHENKO IE PLOTNIKOV AE
Citation: Ga. Kachurin et al., ROLES OF IMPLANTATION TEMPERATURE AND ION DOSE-RATE IN ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 74(3), 1993, pp. 399-404
Risultati: 1-17 |