Citation: Y. Kobayashi et al., Toward the creation of NMR databases in chiral solvents for assignments ofrelative and absolute stereochemistry: Proof of concept, ORG LETT, 3(14), 2001, pp. 2245-2248
Authors:
Fan, MH
Gerung, H
Yelehanka, PR
Cheng, A
Zhou, MS
Chi, C
Tan, CH
Xie, J
Citation: Mh. Fan et al., Critical dimension control optimization methodology on shallow trench isolation substrate for sub-0.25 mu m technology gate patterning, J VAC SCI B, 19(2), 2001, pp. 456-460
Citation: Ch. Tan et al., Finite-form acoustical reconstruction algorithm for scatterers of absorbing type and its computer simulations, PROG NAT SC, 11, 2001, pp. S106-S109
Citation: Zy. Tao et al., Acoustical tomography based on the second-order Rytov transform perturbation approximation, PROG NAT SC, 11, 2001, pp. S114-S117
Citation: Lf. Mao et al., Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(7), 2001, pp. 1081-1084
Citation: Lf. Mao et al., Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(5), 2001, pp. 773-776
Citation: Fc. Mu et al., An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode, SOL ST ELEC, 45(3), 2001, pp. 385-389
Citation: Fc. Mu et al., A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes, SOL ST ELEC, 45(3), 2001, pp. 435-439
Citation: Lf. Mao et al., Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 531-534
Citation: Lf. Mao et al., Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current, SOL ST COMM, 119(2), 2001, pp. 67-71
Citation: Lf. Mao et al., The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures, MICROEL REL, 41(6), 2001, pp. 927-931
Citation: Fc. Mu et al., A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d, MICROEL REL, 41(11), 2001, pp. 1909-1913
Citation: Fc. Mu et al., Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions, MICROEL REL, 41(1), 2001, pp. 129-131
Authors:
Tan, CH
Inigo, AR
Hsu, JH
Fann, W
Wei, PK
Citation: Ch. Tan et al., Mesoscale structures in luminescent conjugated polymer thin films studied by near-field scanning optical microscopy, J PHYS CH S, 62(9-10), 2001, pp. 1643-1654
Authors:
Tan, EC
Chong, SA
Mahendran, R
Dong, F
Tan, CH
Citation: Ec. Tan et al., Susceptibility to neuroleptic-induced tardive dyskinesia and the T102C polymorphism in the serotonin type 2A receptor, BIOL PSYCHI, 50(2), 2001, pp. 144-147