Authors:
Niraula, M
Nakamura, A
Aoki, T
Tatsuoka, H
Hatanaka, Y
Citation: M. Niraula et al., Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing, J ELEC MAT, 30(8), 2001, pp. 911-916
Citation: T. Koga et al., Epitaxial growth of high quality beta-FeSi2 layers on Si(111) under the presence of an Sb flux, APPL SURF S, 169, 2001, pp. 310-314
Authors:
Tatsuoka, H
Koga, T
Matsuda, K
Nose, Y
Souno, Y
Kuwabara, H
Brown, PD
Humphreys, CJ
Citation: H. Tatsuoka et al., Microstructure of semiconducting MnSi1.7 and beta-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy, THIN SOL FI, 381(2), 2001, pp. 231-235
Authors:
Suzuki, T
Tatsuoka, H
Chiba, T
Sekikawa, T
Nemoto, T
Moriya, H
Sakuraba, S
Nakaya, H
Citation: T. Suzuki et al., Beneficial effects of nitric oxide synthase inhibition on the recovery of neurological function after spinal card injury in rats, N-S ARCH PH, 363(1), 2001, pp. 94-100
Authors:
Miyake, A
Kominami, H
Tatsuoka, H
Kuwabara, H
Nakanishi, Y
Hatanaka, Y
Citation: A. Miyake et al., Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS film on Si(111) substrate, JPN J A P 2, 39(11B), 2000, pp. L1186-L1187
Authors:
Koga, T
Bright, A
Suzuki, T
Shimada, K
Tatsuoka, H
Kuwabara, H
Citation: T. Koga et al., Growth of beta-FeSi2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds, THIN SOL FI, 369(1-2), 2000, pp. 248-252
Citation: T. Osuga et H. Tatsuoka, Effect of 1.5 T steady magnetic field on neuroconduction of a bullfrog sciatic nerve in a partially active state within several hours after extraction, MAGN RES IM, 17(5), 1999, pp. 791-794
Authors:
Yamaguchi, K
Murakami, M
Takahashi, K
Moriya, H
Tatsuoka, H
Chiba, T
Citation: K. Yamaguchi et al., Behavioral and morphologic studies of the chronically compressed cauda equina - Experimental model of lumbar spinal stenosis in the rat, SPINE, 24(9), 1999, pp. 845-851
Authors:
Yan, Y
Al-Jassim, MM
Matsuda, K
Tatsuoka, H
Kuwabara, H
Pennycook, SJ
Citation: Y. Yan et al., The mechanism for the high-quality single-phase growth of MnSi films on Si(111) in the presence of Sb flux, APPL PHYS L, 75(19), 1999, pp. 2894-2896