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Results: 1-17 |
Results: 17
Hydrogen-acceptor interactions in diamond
Authors: Chevallier, J Lusson, A Ballutaud, D Theys, B Jomard, F Deneuville, A Bernard, M Gheeraert, E Bustarret, E
Citation: J. Chevallier et al., Hydrogen-acceptor interactions in diamond, DIAM RELAT, 10(3-7), 2001, pp. 399-404
Hydrogen diffusion and stability in polycrystalline CVD undoped diamond
Authors: Ballutaud, D Jomard, F Theys, B Mer, C Tromson, D Bergonzo, P
Citation: D. Ballutaud et al., Hydrogen diffusion and stability in polycrystalline CVD undoped diamond, DIAM RELAT, 10(3-7), 2001, pp. 405-410
Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy
Authors: Theys, B Teukam, Z Jomard, F de Mierry, P Polyakov, AY Barbe, M
Citation: B. Theys et al., Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy, SEMIC SCI T, 16(9), 2001, pp. L53-L56
Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition
Authors: Mimila-Arroyo, J Lusson, A Chevallier, J Barbe, M Theys, B Jomard, F Bland, SW
Citation: J. Mimila-arroyo et al., Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(19), 2001, pp. 3095-3097
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films
Authors: Ballutaud, D Jomard, F Le Duigou, J Theys, B Chevallier, J Deneuville, A Pruvost, F
Citation: D. Ballutaud et al., Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films, DIAM RELAT, 9(3-6), 2000, pp. 1171-1174
Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants (vol 14, pg 1136, 1999)
Authors: Gerard, F Theys, B Lusson, A Jomard, F Dolin, C Rao, EVK Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants (vol 14, pg 1136, 1999), SEMIC SCI T, 15(2), 2000, pp. 233-233
Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers
Authors: Tournie, E Neu, G Teisseire, M Faurie, JP Pelletier, H Theys, B
Citation: E. Tournie et al., Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers, PHYS REV B, 62(19), 2000, pp. 12868-12874
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Theys, B Jomard, F Nikitina, IP Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Effects of proton implantation on electrical and recombination properties of n-GaN
Authors: Polyakov, AY Usikov, AS Theys, B Smirnov, NB Govorkov, AV Jomard, F Shmidt, NM Lundin, WV
Citation: Ay. Polyakov et al., Effects of proton implantation on electrical and recombination properties of n-GaN, SOL ST ELEC, 44(11), 2000, pp. 1971-1983
Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N
Authors: Tournie, E Pelletier, H Neu, G Theys, B Lusson, A Teisseire, M Chauvet, C Faurie, JP
Citation: E. Tournie et al., Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N, J CRYST GR, 214, 2000, pp. 507-510
Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe : As layers
Authors: Pelletier, H Theys, B Lusson, A Cote, D Rommeluere, JF Jomard, F Dolin, C
Citation: H. Pelletier et al., Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe : As layers, J APPL PHYS, 88(1), 2000, pp. 550-554
Evidence of hydrogen-boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments
Authors: Chevallier, J Lusson, A Theys, B Deneuville, A Gheeraert, E
Citation: J. Chevallier et al., Evidence of hydrogen-boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments, DIAM RELAT, 8(2-5), 1999, pp. 278-282
Hydrogenation of buried passive sections in photonic integrated circuits: a tool to improve propagation losses at similar to 1.56 mu m
Authors: Rao, EVK Gottesman, Y Allovon, M Theys, B Sik, H Slempkes, S
Citation: Evk. Rao et al., Hydrogenation of buried passive sections in photonic integrated circuits: a tool to improve propagation losses at similar to 1.56 mu m, MAT SCI E B, 66(1-3), 1999, pp. 50-54
Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants
Authors: Gerard, F Theys, B Lusson, A Jomard, F Dolin, C Rao, EVK Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants, SEMIC SCI T, 14(12), 1999, pp. 1136-1140
Hydrogen in monocrystalline CVD boron doped diamond
Authors: Chevallier, J Ballutaud, D Theys, B Jomard, F Deneuville, A Gheeraert, E Pruvost, F
Citation: J. Chevallier et al., Hydrogen in monocrystalline CVD boron doped diamond, PHYS ST S-A, 174(1), 1999, pp. 73-81
Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe
Authors: Pelletier, H Theys, B Lusson, A Tournie, E Chevallier, J Marfaing, Y Faurie, JP
Citation: H. Pelletier et al., Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe, J APPL PHYS, 86(3), 1999, pp. 1393-1397
Risultati: 1-17 |