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Results:
1-22
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Results: 22
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Synchrotron studies of implanted InxGa1-xAs, J ALLOY COM, 328(1-2), 2001, pp. 193-198
Authors:
Stonert, A
Turos, A
Nowicki, L
Breeger, B
Wendler, E
Wesch, W
Citation: A. Stonert et al., Compositional dependence of defect mobility and damage buildup in AlxGa1-xAs, NUCL INST B, 175, 2001, pp. 219-223
Authors:
Jagielski, J
Piatkowska, A
Matz, W
Richter, E
Gawlik, G
Turos, A
Citation: J. Jagielski et al., Structural and micromechanical properties of ion-beam mixed tungsten-on-steel system, VACUUM, 63(4), 2001, pp. 671-677
Authors:
Gawlik, G
Ratajczak, R
Turos, A
Jagielski, J
Bedell, S
Lanford, WL
Citation: G. Gawlik et al., Hydrogen-ion implantation in GaAs, VACUUM, 63(4), 2001, pp. 697-700
Authors:
Wierzchowski, W
Wieteska, K
Turos, A
Graeff, W
Gawlik, G
Citation: W. Wierzchowski et al., Synchrotron investigation of strain profiles in the implanted semiconductors, VACUUM, 63(4), 2001, pp. 767-773
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Citation: K. Wieteska et al., Application of Bragg-case section topography for strain profile determination in A(III)B(V) implanted semiconductors, J PHYS D, 34(10A), 2001, pp. A122-A127
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography, J SYNCHROTR, 7, 2000, pp. 318-325
Authors:
Turos, A
Gawlik, G
Jagielski, J
Stonert, A
Madi, N
Matz, W
Mucklich, A
Citation: A. Turos et al., Atomic transport effects in Kr-ion bombarded ZrO2/Fe ternary system, NUCL INST B, 166, 2000, pp. 128-132
Authors:
Stonert, A
Turos, A
Nowicki, L
Breeger, B
Citation: A. Stonert et al., Analysis of defects in multicomponent crystals by ion channeling, NUCL INST B, 161, 2000, pp. 496-500
Authors:
Nowicki, L
Ratajczak, R
Stonert, A
Turos, A
Baranowski, JM
Banasik, R
Pakula, K
Citation: L. Nowicki et al., Characterization of InGaN/GaN heterostructures by means of RBS/channeling, NUCL INST B, 161, 2000, pp. 539-543
Authors:
Nowicki, L
Garrido, F
Turos, A
Thome, L
Citation: L. Nowicki et al., Polytypic arrangements of cuboctahedral oxygen clusters in U3O7, J PHYS CH S, 61(11), 2000, pp. 1789-1804
Authors:
Leszczynski, M
Prystawko, P
Suski, T
Lucznik, B
Domagala, J
Bak-Misiuk, J
Stonert, A
Turos, A
Langer, R
Barski, A
Citation: M. Leszczynski et al., Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire, J ALLOY COM, 286(1-2), 1999, pp. 271-275
Authors:
Wierzchowski, W
Wieteska, K
Graeff, W
Turos, A
Citation: W. Wierzchowski et al., Interference fringes in plane-wave topography of AlxCa1-xAs epitaxial layers implanted with Se ions, J ALLOY COM, 286(1-2), 1999, pp. 343-348
Authors:
Turos, A
Nowicki, L
Garrido, F
Thome, L
Fromknecht, R
Domagala, J
Citation: A. Turos et al., Polygonisation of ionic single crystals - A new effect of swift ion bombardment, ACT PHY P B, 30(5), 1999, pp. 1611-1618
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Lattice deformation in AlxGa1-xAs epitaxial layers caused by implantation with high doses of 1 MeV Si ions, ACT PHY P A, 96(2), 1999, pp. 289-293
Authors:
Turos, A
Stonert, A
Breeger, B
Wendler, E
Wesch, W
Fromknecht, R
Citation: A. Turos et al., Low temperature transformations of defects in GaAs and AlGaAs, NUCL INST B, 148(1-4), 1999, pp. 401-405
Authors:
Turos, A
Gawlik, G
Jagielski, J
Stonert, A
Matz, W
Groetzschel, R
Citation: A. Turos et al., Ion beam mixing of the ZrO2/Fe system, NUCL INST B, 148(1-4), 1999, pp. 778-782
Authors:
Jagielski, J
Kopcewicz, M
Turos, A
Eichhorn, F
Citation: J. Jagielski et al., Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers, NUCL INST B, 148(1-4), 1999, pp. 886-890
Authors:
Jagielski, J
Gawlik, G
Turos, A
Piatkowska, A
Treheux, D
Starczewski, L
Szudrowicz, M
Citation: J. Jagielski et al., Study of micromechanical properties of ion-beam mixed layers, NUCL INST B, 148(1-4), 1999, pp. 941-945
Authors:
Guziewicz, M
Piotrowska, A
Kaminska, E
Golaszewska, K
Turos, A
Mizera, E
Winiarski, A
Szade, J
Citation: M. Guziewicz et al., Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs, SOL ST ELEC, 43(6), 1999, pp. 1055-1061
Authors:
Sass, J
Mazur, K
Gladki, A
Turos, A
Eichhorn, F
Citation: J. Sass et al., Reciprocal space mapping and reflectivity investigations of epi-ready InP substrate, PHYS ST S-A, 171(1), 1999, pp. 395-401
Authors:
Turos, A
Stonert, A
Breeger, B
Wendler, E
Wesch, W
Citation: A. Turos et al., Thermally activated defect transformations in III-V compound semiconductors, NUKLEONIKA, 44(2), 1999, pp. 93-101
Risultati:
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