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Results: 20

Authors: CHELYADINSKII AR VARICHENKO VS ZAITSEV AM
Citation: Ar. Chelyadinskii et al., SPATIAL-DISTRIBUTION, BUILDUP, AND ANNEALING OF RADIATION DEFECTS IN SILICON IMPLANTED BY HIGH-ENERGY KRYPTON AND XENON IONS, Physics of the solid state, 40(9), 1998, pp. 1478-1481

Authors: ADAWI MA DIDYK AY VARICHENKO VS ZAITSEV AM
Citation: Ma. Adawi et al., RADIATION-DAMAGE IN DIELECTRIC AND SEMICONDUCTOR SINGLE-CRYSTALS (DIRECT OBSERVATION), Radiation physics and chemistry (1993), 53(5), 1998, pp. 577-582

Authors: MELNIKOV AA DENISENKO AV ZAITSEV AM SHULENKOV A VARICHENKO VS FILIPP AR DRAVIN VA KANDA H FAHRNER WR
Citation: Aa. Melnikov et al., ELECTRICAL-PROPERTIES AND OPTICAL-PROPERTIES OF LIGHT-EMITTING P-I-N-DIODES ON DIAMOND, Journal of applied physics, 84(11), 1998, pp. 6127-6134

Authors: ERTCHAK DP EFIMOV VG STELMAKH VF MARTINOVICH VA ALEXANDROV AF GUSEVA MB PENINA NM VARICHENKO VS KARPOVICH IA ZAITSEV AM FAHRNER WR FINK D
Citation: Dp. Ertchak et al., THE ORIGIN OF DOMINATING ESR ABSORPTION IN ION-IMPLANTED DIAMOND, Physica status solidi. b, Basic research, 203(2), 1997, pp. 529-547

Authors: FEDOTOV SA BYELI AV ZAITSEV AM VARICHENKO VS KAZYUTCHITS NM
Citation: Sa. Fedotov et al., MODIFICATION OF DIAMOND FILMS BY HIGH-ENERGY ION IRRADIATION - TRACK CHANNELING AND ION CHARGE FLUCTUATION EFFECTS, Thin solid films, 301(1-2), 1997, pp. 183-187

Authors: POPOVICI G MELNIKOV AA VARICHENKO VS KHASAWINAH S SUNG T PRELAS MA DENISENKO AB PENINA NM MARTINOVICH VA DROZDOVA EN ZAITSEV AM FAHRNER WR FARMER JW WHITE H CHAMBERLAIN J
Citation: G. Popovici et al., PROPERTIES OF LI DOPED DIAMOND FILMS, OBTAINED BY TRANSMUTATION OF B-10 INTO LI-7, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 761-765

Authors: VARICHENKO VS ZAITSEV AM KAZUTCHITS NM CHELYADINSKII AR PENINA NM MARTINOVICH VA LATUSHKO YI FAHRNER WR
Citation: Vs. Varichenko et al., DEFECT PRODUCTION IN SILICON IRRADIATED WITH 5.68 GEV XE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 107(1-4), 1996, pp. 268-272

Authors: DIDYK AY VARICHENKO VS
Citation: Ay. Didyk et Vs. Varichenko, TRACK STRUCTURE IN DIELECTRIC AND SEMICONDUCTOR SINGLE-CRYSTALS IRRADIATED BY HEAVY-IONS WITH HIGH-LEVEL OF INELASTIC ENERGY-LOSSES, Radiation measurements, 25(1-4), 1995, pp. 119-124

Authors: DIDYK AY VARICHENKO VS ZAITSEV AM RUSETSKII MS DEWELDIGE K FRIES T WANDELT K
Citation: Ay. Didyk et al., SURFACE MODIFICATION OF DIAMOND IRRADIATED WITH SWIFT HEAVY-IONS, Radiation measurements, 25(1-4), 1995, pp. 685-688

Authors: POPOVICI G PRELAS MA SUNG T KHASAWINAH S MELNIKOV AA VARICHENKO VS ZAITSEV AM DENISENKO AV FAHRNER WR
Citation: G. Popovici et al., PROPERTIES OF DIFFUSED DIAMOND FILMS WITH N-TYPE CONDUCTIVITY, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 877-881

Authors: FEDOTOV SA VARICHENKO VS ZAITSEV AM ISHIMARU M HIROYAMA Y MOTOOKA T
Citation: Sa. Fedotov et al., MACRODEFECT FORMATION IN SEMICONDUCTORS DURING HIGH-ENERGY ION-IMPLANTATION - MONTE-CARLO SIMULATION OF DAMAGE DEPTH DISTRIBUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 202-205

Authors: FINK D CHADDERTON LT CRUZ SA FAHRNER WR HNATOWICZ V TEKAAT EH MELNIKOV AA VARICHENKO VS ZAITSEV AM
Citation: D. Fink et al., ION TRACK DOPING, Radiation effects and defects in solids, 132(2), 1994, pp. 81-90

Authors: VARICHENKO VS ZAITSEV AM RUSETSKII MS STELMAKH VF DEWELDIGE K FRIES T WANDELT K DIDYK AJ LAPTEV VA
Citation: Vs. Varichenko et al., SCANNING-TUNNELING-MICROSCOPY OF DIAMOND IRRADIATED WITH HIGH-ENERGY IONS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 711-714

Authors: BURCHARD B ZAITSEV AM FAHRNER WR MELNIKOV AA DENISENKO AV VARICHENKO VS
Citation: B. Burchard et al., DIAMOND BASED LIGHT-EMITTING STRUCTURES, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 947-950

Authors: VARICHENKO VS ZAITSEV AM LINDNER JKN DOMRES R PENINA NM ERCHAK DP CHELYADINSKII AR MARTINOVITSH VA
Citation: Vs. Varichenko et al., EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 240-244

Authors: VARICHENKO VS ZAITSEV AM MELNIKOV AA FAHRNER WR KASYTCHITS NM PENINA NM ERCHAK DP
Citation: Vs. Varichenko et al., DEFECT PRODUCTION IN SILICON IMPLANTED WITH 13.6-MEV BORON IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 259-265

Authors: FINK D CHADDERTON LT CRUZ SA FAHRNER WR HNATOWICZ V TEKAAT EH MELNIKOV AA VARICHENKO VS ZAITSEV AM
Citation: D. Fink et al., ION TRACKS IN CONDENSED CARBONACEOUS MATTER, Radiation effects and defects in solids, 126(1-4), 1993, pp. 247-250

Authors: ERCHAK DP EFIMOV VG AZARKO II DENISENKO AV PENINA NM STELMAKH VF VARICHENKO VS ZAITSEV AM MELNIKOV AA
Citation: Dp. Erchak et al., ELECTRON-PARAMAGNETIC-RESONANCE OF BORON-IMPLANTED NATURAL DIAMONDS AND EPITAXIAL DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 2(8), 1993, pp. 1164-1167

Authors: BONDARENKO VP VARICHENKO VS DOROFEEV AM KAZYUCHITS NM LABUNOV VA STELMAKH VF
Citation: Vp. Bondarenko et al., INTEGRAL OPTICAL WAVE-GUIDE BASED ON PORO US SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 19(14), 1993, pp. 73-76

Authors: ZAITSEV AM FEDOTOV SA MELNIKOV AA KOMAROV FF FAHRNER WR VARICHENKO VS KAAT EHT
Citation: Am. Zaitsev et al., PENETRATION OF HIGH-ENERGY IONS IN SEMICONDUCTORS THROUGH TRACKS - SIMULATION WITH TRANSPORT-EQUATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 421-430
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