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Results: 1-12 |
Results: 12
Radial confinement in lateral power devices
Authors: Krishnan, S De Souza, MM Narayanan, EMS Vellvehi, M Roig, J Flores, D Rebollo, J Millan, J
Citation: S. Krishnan et al., Radial confinement in lateral power devices, MICROELEC J, 32(5-6), 2001, pp. 481-484
SiC power DIMOS with double implanted Al/B P-well
Authors: Godignon, P Morvan, E Jorda, X Vellvehi, M Flores, D Rebollo, J
Citation: P. Godignon et al., SiC power DIMOS with double implanted Al/B P-well, MICROELEC J, 32(5-6), 2001, pp. 503-507
Dynamic latch-up in advanced LIGBT structures at high operating temperatures
Authors: Vellvehi, M Jorda, X Flores, D Morvan, E Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Dynamic latch-up in advanced LIGBT structures at high operating temperatures, MAT SCI E B, 74(1-3), 2000, pp. 304-308
Radial confinement: concept for lateral power devices
Authors: Krishnan, S De Souza, MM Narayanan, EMS Vellvehi, M Flores, D Rebollo, J Millan, J
Citation: S. Krishnan et al., Radial confinement: concept for lateral power devices, ELECTR LETT, 36(14), 2000, pp. 1242-1244
Mapping of 6H-SiC for implantation control
Authors: Morvan, E Godignon, P Montserrat, J Flores, D Jorda, X Vellvehi, M
Citation: E. Morvan et al., Mapping of 6H-SiC for implantation control, DIAM RELAT, 8(2-5), 1999, pp. 335-340
Lateral spread of implanted ion distributions in 6H-SiC: simulation
Authors: Morvan, E Mestres, N Pascual, J Flores, D Vellvehi, M Rebollo, J
Citation: E. Morvan et al., Lateral spread of implanted ion distributions in 6H-SiC: simulation, MAT SCI E B, 61-2, 1999, pp. 373-377
Electronic stopping power for Monte Carlo simulation of ion implantation into SiC
Authors: Morvan, E Godignon, P Berberich, S Vellvehi, M Millan, J
Citation: E. Morvan et al., Electronic stopping power for Monte Carlo simulation of ion implantation into SiC, NUCL INST B, 147(1-4), 1999, pp. 68-73
Cryogenic operation of emitter switched thyristor structures
Authors: Flores, D Jorda, X Vellvehi, M Rebollo, J Millan, J
Citation: D. Flores et al., Cryogenic operation of emitter switched thyristor structures, SOL ST ELEC, 43(3), 1999, pp. 633-640
Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K
Authors: Vellvehi, M Jorda, X Flores, D Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K, MICROEL REL, 39(8), 1999, pp. 1239-1246
Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures
Authors: Vellvehi, M Jorda, X Godignon, P Flores, D Hidalgo, S Rebollo, J
Citation: M. Vellvehi et al., Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures, MICROELEC J, 30(6), 1999, pp. 583-589
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor
Authors: Flores, D Godignon, P Jorda, X Vellvehi, M Fernandez, J Millan, J
Citation: D. Flores et al., Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor, MICROELEC J, 30(6), 1999, pp. 591-597
Channeling implantations of Al+ into 6H silicon carbide
Authors: Morvan, E Godignon, P Vellvehi, M Hallen, A Linnarsson, M Kuznetsov, AY
Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992
Risultati: 1-12 |