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Results:
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Results: 22
Authors:
GRANDIDIER B
STIEVENARD D
NYS JP
WALLART X
Citation: B. Grandidier et al., MICROSCOPIC BEHAVIOR OF SILICON IN SILICON DELTA-DOPED LAYER IN GAAS, Applied physics letters, 72(19), 1998, pp. 2454-2456
Authors:
TETELIN C
WALLART X
STIEVENARD D
NYS JP
GRAVESTEIJN DJ
Citation: C. Tetelin et al., EVIDENCE OF GE ISLAND FORMATION DURING THERMAL ANNEALING OF SIGE ALLOYS - COMBINED ATOMIC-FORCE MICROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 137-141
Authors:
PIOTROWICZ S
GAQUIERE C
BONTE B
BOURCIER E
THERON D
WALLART X
CROSNIER Y
Citation: S. Piotrowicz et al., BEST COMBINATION BETWEEN POWER-DENSITY, EFFICIENCY, AND GAIN AT V-BAND WITH AN INP-BASED PHEMT STRUCTURE, IEEE microwave and guided wave letters, 8(1), 1998, pp. 10-12
Authors:
LAMPIN JF
WALLART X
GOUY JP
MOLLOT F
Citation: Jf. Lampin et al., LIGHT-HOLE RESONANT-TUNNELING THROUGH TENSILE-STRAINED GAINAS QUANTUM-WELLS, Superlattices and microstructures, 24(4), 1998, pp. 273-278
Authors:
SCHULER O
DEHAESE O
WALLART X
MOLLOT F
Citation: O. Schuler et al., A STUDY OF GAINP GAAS INTERFACES - METALLURGICAL COUPLING OF SUCCESSIVE QUANTUM-WELLS/, Superlattices and microstructures, 23(2), 1998, pp. 265-271
Authors:
DEHAESE O
WALLART X
SCHULER O
MOLLOT F
Citation: O. Dehaese et al., XPS STUDY OF GAINP ON GAAS INTERFACE, Applied surface science, 123, 1998, pp. 523-527
Authors:
DEHAESE O
WALLART X
SCHULER O
MOLLOT F
Citation: O. Dehaese et al., X-RAY PHOTOEMISSION CHARACTERIZATION OF INTERFACE ABRUPTNESS AND BAND-OFFSET OF GA0.5IN0.5P GROWN ON GAAS, Journal of applied physics, 84(4), 1998, pp. 2127-2132
Authors:
VIGNAUD D
WALLART X
MOLLOT F
SERMAGE B
Citation: D. Vignaud et al., PHOTOLUMINESCENCE STUDY OF THE INTERFACE IN TYPE-II INALAS-INP HETEROSTRUCTURES, Journal of applied physics, 84(4), 1998, pp. 2138-2145
Authors:
SCHULER O
DEHAESE O
WALLART X
MOLLOT F
Citation: O. Schuler et al., INTERFACE QUALITY AND ELECTRON-TRANSFER AT THE GAINP ON GAAS HETEROJUNCTION, Journal of applied physics, 84(2), 1998, pp. 765-769
Authors:
TETELIN C
WALLART X
NYS JP
VESCAN L
GRAVESTEIJN DJ
Citation: C. Tetelin et al., KINETICS AND MECHANISM OF LOW-TEMPERATURE ATOMIC OXYGEN-ASSISTED OXIDATION OF SIGE LAYERS, Journal of applied physics, 83(5), 1998, pp. 2842-2846
Authors:
CHEVALIER P
WALLART X
BONTE B
FAUQUEMBERGUE R
Citation: P. Chevalier et al., V-BAND HIGH-POWER LOW-VOLTAGE INGAAS/INP COMPOSITE CHANNEL HEMTS/, Electronics Letters, 34(4), 1998, pp. 409-411
Authors:
ALLONGUE P
DEVILLENEUVE CH
PINSON J
OZANAM F
CHAZALVIEL JN
WALLART X
Citation: P. Allongue et al., ORGANIC MONOLAYERS ON SI(111) BY ELECTROCHEMICAL METHOD, Electrochimica acta, 43(19-20), 1998, pp. 2791-2798
Authors:
VIGNAUD D
WALLART X
MOLLOT F
Citation: D. Vignaud et al., DIRECT AND INVERSE EQUIVALENT INALAS-INP INTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(9), 1998, pp. 1075-1077
Authors:
DEHAESE O
WALLART X
SCHULER O
MOLLOT F
Citation: O. Dehaese et al., AS SURFACE SEGREGATION DURING THE GROWTH OF GAINP ON GAAS, JPN J A P 1, 36(11), 1997, pp. 6620-6624
Authors:
TETELIN C
WALLART X
VESCAN L
NYS JP
Citation: C. Tetelin et al., PLASMA-ASSISTED OXIDATION OF SIGE LAYERS AT 500-DEGREES-C - INTERFACECHARACTERIZATION, Applied surface science, 104, 1996, pp. 385-391
Authors:
TETELIN C
WALLART X
NYS JP
VESCAN L
Citation: C. Tetelin et al., GERMANIUM BEHAVIOR DURING THE LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION OF SIGE ALLOYS, Surface and interface analysis, 23(6), 1995, pp. 363-366
Authors:
DEHAESE O
WALLART X
MOLLOT F
Citation: O. Dehaese et al., KINETIC-MODEL OF ELEMENT-III SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF III-III'-IV-SEMICONDUCTOR COMPOUNDS, Applied physics letters, 66(1), 1995, pp. 52-54
Authors:
WALLART X
NYS JP
TETELIN C
Citation: X. Wallart et al., GROWTH OF ULTRATHIN IRON SILICIDE FILMS - OBSERVATION OF THE GAMMA-FESI2 PHASE BY ELECTRON SPECTROSCOPIES, Physical review. B, Condensed matter, 49(8), 1994, pp. 5714-5717
Authors:
ANDRE JP
ALAOUI H
DESWARTE A
ZHENG Y
PETROFF JF
WALLART X
NYS JP
Citation: Jp. Andre et al., IRON SILICIDE GROWTH ON SI(111) SUBSTRATE USING THE METALORGANIC VAPOR-PHASE EPITAXY PROCESS, Journal of crystal growth, 144(1-2), 1994, pp. 29-40
Authors:
VIGNAUD D
WALLART X
MOLLOT F
Citation: D. Vignaud et al., INALAS INP HETEROSTRUCTURES - INFLUENCE OF A THIN INAS LAYER AT THE INTERFACE/, Journal of applied physics, 76(4), 1994, pp. 2324-2329
Authors:
WESTPHALEN R
BOUDART B
THERON D
WALLART X
DRUELLE Y
CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81
Authors:
WALLART X
NYS JP
DEHAESE O
VINCENT G
Citation: X. Wallart et al., STUDY OF THE EPITAXY OF BETA-FESI2 BY CODEPOSITION OF FE AND SI ON SI(111), Applied surface science, 70-1, 1993, pp. 598-602
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