Authors:
SPREVAK D
FERGUSON RS
WALTON AJ
NEWSAM MI
Citation: D. Sprevak et al., OPTIMIZATION OF EMPIRICAL-MODEL FOR IC FABRICATION PROCESS USING LINEAR-PROGRAMMING, IEE proceedings. Science, measurement and technology, 145(2), 1998, pp. 58-60
Authors:
ABUGHAZALEH SA
STEVENSON JTM
CHRISTIE P
WALTON AJ
Citation: Sa. Abughazaleh et al., THEORETICAL AND EXPERIMENTAL-ANALYSIS OF WIRE SEGMENT HOLOGRAMS FOR STATISTICAL INTERCONNECT METROLOGY, IEEE transactions on semiconductor manufacturing, 11(2), 1998, pp. 225-231
Citation: Ga. Allan et Aj. Walton, CRITICAL AREA EXTRACTION FOR SOFT FAULT ESTIMATION, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 146-154
Authors:
WALTON AJ
FALLON M
NEWSAM MI
FERGUSON RS
SPREVAK D
ELLIOTT JP
ALLAN GA
Citation: Aj. Walton et al., TOTAL TCAD STRATEGY FOR DFM IN IC TECHNOLOGY DEVELOPMENT, IEE proceedings. Science, measurement and technology, 144(2), 1997, pp. 63-68
Authors:
ELLIOTT JP
FALLON M
WALTON AJ
STEVENSON JTM
OHARA A
GUNDLACH AM
Citation: Jp. Elliott et al., AN ELECTRICAL TEST STRUCTURE FOR THE MEASUREMENT OF PLANARIZATION, IEEE transactions on semiconductor manufacturing, 10(2), 1997, pp. 242-249
Citation: Ga. Allan et Aj. Walton, EFFICIENT CRITICAL AREA MEASUREMENTS OF IC LAYOUT APPLIED TO QUALITY AND RELIABILITY ENHANCEMENT, Microelectronics and reliability, 37(12), 1997, pp. 1825-1833
Authors:
SPREVAK D
FERGUSON RS
WALTON AJ
FALLON M
NEWSAM MI
Citation: D. Sprevak et al., SCREENING OF VARIABLES FOR THE EMPIRICAL MODELING OF SEMICONDUCTOR-DEVICES, IEE proceedings. Science, measurement and technology, 143(5), 1996, pp. 319-326
Citation: Aj. Walton et al., THE APPLICATION OF DOE AND RSM TECHNIQUES FOR WAFER MAPPING IN IC TECHNOLOGY, IEICE transactions on electronics, E79C(2), 1996, pp. 219-225
Citation: Aj. Hardwick et Aj. Walton, THE ACOUSTIC BUBBLE CAPACITOR - A NEW METHOD FOR SIZING GAS-BUBBLES IN LIQUIDS, Measurement science & technology, 6(2), 1995, pp. 202-205
Authors:
REEVES CM
TURCU ICE
PREWETT PD
GUNDLACH AM
STEVENSON JT
WALTON AJ
ROSS AWS
LAWES RA
ANASTASI P
BURGE R
MITCHELL P
Citation: Cm. Reeves et al., FABRICATION OF 200 NM FIELD-EFFECT TRANSISTOR BY X-RAY-LITHOGRAPHY WITH A LASER-PLASMA X-RAY SOURCE, Electronics Letters, 31(25), 1995, pp. 2218-2219
Authors:
COOKE GA
DOWSETT MG
HILL C
PEARSON PJ
WALTON AJ
Citation: Ga. Cooke et al., COMPARISON BETWEEN COMPUTER-SIMULATION AND DIRECT SECONDARY-ION MASS-SPECTROMETRY MEASUREMENT OF LATERAL DOPANT DISTRIBUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 243-246
Authors:
FALLON M
WALTON AJ
STEVENSON JTM
ROSS AWS
Citation: M. Fallon et al., DESIGN CONSIDERATIONS FOR A GAUDI TEST STRUCTURE WHICH CAN BE USED TODETERMINE THE OPTIMUM FOCUS, IEEE transactions on semiconductor manufacturing, 7(3), 1994, pp. 272-278
Citation: Gj. Gaston et Aj. Walton, THE INTEGRATION OF SIMULATION AND RESPONSE-SURFACE METHODOLOGY FOR THE OPTIMIZATION OF IC PROCESSES, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 22-33
Citation: Ck. Tang et al., LOW-LOSS, SINGLE-MODE, OPTICAL-PHASE MODULATOR IN SIMOX MATERIAL, Journal of lightwave technology, 12(8), 1994, pp. 1394-1400
Authors:
WALTON AJ
FALLON M
STEVENSON JTM
ROSS AWS
REEVES CM
Citation: Aj. Walton et al., IMPROVED STRUCTURE FOR OPTIMIZATION OF FOCUS AND EXPOSURE FOR IC PRODUCTION, Electronics Letters, 29(17), 1993, pp. 1573-1574