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Results:
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Results: 22
Authors:
NAWAZ R
ELLIOTT M
WILKS SP
WILLIAMS RH
BLAND SW
DAVIES JI
Citation: R. Nawaz et al., SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS USING DELTA-DOPING, Applied surface science, 123, 1998, pp. 467-470
Authors:
CAMMACK DS
MCGREGOR SM
MCCHESNEY JJ
CLARK SA
DUNSTAN PR
BURGESS SR
WILKS SP
PEIRO F
FERRER JC
CORNET A
MORANTE JR
KESTLE A
WESTWOOD DI
ELLIOTT M
Citation: Ds. Cammack et al., AN INVESTIGATION OF THE PROPERTIES OF INTIMATE IN-INXGA1-XAS(100) INTERFACES FORMED AT ROOM AND CRYOGENIC TEMPERATURES, Applied surface science, 123, 1998, pp. 501-507
Authors:
WILKS SP
BURGESS S
DUNSTAN P
PAN M
PRITCHARD MA
WILLIAMS RH
CAMMACK D
CLARK SA
WESTWOOD DI
Citation: Sp. Wilks et al., BAND ENGINEERING AT THE GAAS-ALGAAS HETEROJUNCTION USING ULTRA-THIN SI AND BE DIPOLE LAYERS - A COMPARISON OF MODIFICATION TECHNIQUES, Applied surface science, 123, 1998, pp. 528-532
Authors:
DUNSTAN PR
WILKS SP
BURGESS SR
PAN M
WILLIAMS RH
CAMMACK DS
CLARK SA
Citation: Pr. Dunstan et al., THE ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE SILICON-GALLIUM ARSENIDE(110) INTERFACE, Applied surface science, 123, 1998, pp. 533-537
Authors:
CAMMACK DS
CLARK SA
DUNSTAN PR
PAN M
WILKS SP
ELLIOTT M
Citation: Ds. Cammack et al., FORMATION OF IN- AND AU-IN-0.52 AL-0.48 AS(100) INTERFACES - A SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY STUDY, Journal of applied physics, 84(8), 1998, pp. 4443-4447
Authors:
PAN M
WILKS SP
DUNSTAN PR
PRITCHARD M
WILLIAMS RH
CAMMACK DS
CLARK SA
Citation: M. Pan et al., MODIFICATION OF BAND OFFSETS BY A ZNSE INTRALAYER AT THE SI GE(111) INTERFACE/, Applied physics letters, 72(21), 1998, pp. 2707-2709
Authors:
WILKS SP
KESTLE A
Citation: Sp. Wilks et A. Kestle, THE CONTROL AND MODIFICATION OF SEMICONDUCTOR INTERFACES USING THIN MULTIQUANTUM BARRIER WELL (MQB/W) REFLECTORS/, Applied surface science, 117, 1997, pp. 334-341
Authors:
CAMMACK DS
MCGREGOR SM
MCCHESNEY JJ
DHARMADASA IM
CLARK SA
DUNSTAN PR
BURGESS SR
WILKS SP
ELIOTT M
Citation: Ds. Cammack et al., PHOTOEMISSION-STUDY OF THE FORMATION OF INTIMATE IN-INGAAS(100) CONTACTS AT ROOM AND CRYOGENIC TEMPERATURES, Journal of applied physics, 81(12), 1997, pp. 7876-7879
Authors:
BURGESS SR
COWIE BCC
WILKS SP
DUNSTAN PR
DUNSCOMBE CJ
WILLIAMS RH
Citation: Sr. Burgess et al., A SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF TELLURIUMADSORBED ONTO SI(100), Applied surface science, 104, 1996, pp. 152-157
Authors:
CLARK SA
WILKS SP
KESTLE A
WESTWOOD DI
ELLIOTT M
Citation: Sa. Clark et al., IMPROVEMENTS TO THE SCHOTTKY-BARRIER HEIGHTS OF INTIMATE METAL-INGAASCONTACTS BY LOW-TEMPERATURE METALLIZATION, Surface science, 352, 1996, pp. 850-854
Authors:
CLARK SA
WILKS SP
WILLIAMS RH
JOHNSON AD
WHITEHOUSE CR
Citation: Sa. Clark et al., METAL-IN80AL20SB INTERFACE FORMATION - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2289-2292
Authors:
KESTLE A
WILKS SP
WESTWOOD DI
KE M
ELLIOTT M
Citation: A. Kestle et al., THE CONTROL AND MODIFICATION OF METAL-SEMICONDUCTOR INTERFACES USING MULTI QUANTUM BARRIERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 145-148
Authors:
NAWAZ R
BRYANT AL
ELLIOTT M
WESTWOOD DI
WILKS SP
Citation: R. Nawaz et al., EXAMINATION OF INTERNALLY DELTA-DOPED GALLIUM-ARSENIDE RESONANT-TUNNELING STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 353-356
Authors:
WILLIAMS JP
WILKS SP
WILLIAMS RH
TARRY HA
Citation: Jp. Williams et al., AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INTERACTION AND CHEMICAL PASSIVATION OF CHEMICALLY ETCHED (100) ORIENTED HG1-XCDXTE (X=0.226) UTILIZING CHROMIUM AND ALUMINUM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2676-2683
Authors:
WILKS SP
WILLIAMS RH
Citation: Sp. Wilks et Rh. Williams, SENSITIVITY ANALYSIS OF DIPOLE LAYERS AT SEMICONDUCTORS INTERFACES, Journal of electron spectroscopy and related phenomena, 72, 1995, pp. 49-54
Authors:
CLARK SA
CAIRNS JW
WILKS SP
WILLIAMS RH
JOHNSON AD
WHITEHOUSE CR
Citation: Sa. Clark et al., ANTIMONY CAPPING AND DECAPPING OF INALSB(100), Surface science, 336(1-2), 1995, pp. 193-198
Authors:
CLARK SA
DUNSCOMBE CJ
WOOLF DA
WILKS SP
WILLIAMS RH
Citation: Sa. Clark et al., ARSENIC CAPPING AND DECAPPING OF INYAL1-YAS(100) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 551-554
Authors:
CLARK SA
WILKS SP
WILLIAMS RH
LUO JK
PEIRO F
PEREZRODRIGUEZ A
CORNET A
MORANTE JR
Citation: Sa. Clark et al., THE CHARACTERISTICS OF INTIMATE AU-INYAL1-Y SCHOTTKY DIODES - A MISMATCH DEPENDENCE STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 433-438
Authors:
WILKS SP
WILLIAMS RH
WILLIAMS JP
TARRY HA
Citation: Sp. Wilks et al., AN XPS STUDY OF METAL-CDXHG1-XTE(CMT X=0.225) INTERFACES FOR SURFACESPREPARED IN VACUUM (110) AND BY CHEMICAL ETCHING (100) - A COMPARISONOF THE INTERFACIAL STABILITY, Semiconductor science and technology, 9(9), 1994, pp. 1706-1712
Authors:
WILKS SP
CORNISH AE
ELLIOTT M
WOOLF DA
WESTWOOD DI
WILLIAMS RH
Citation: Sp. Wilks et al., INVESTIGATION OF SILICON DELTA-DOPED GALLIUM-ARSENIDE USING THE SHUBNIKOV-DE HAAS EFFECT AND THEORETICAL MODELING, Journal of applied physics, 76(6), 1994, pp. 3583-3588
Authors:
CLARK SA
WILKS SP
MORRIS JI
WOOLF DA
WILLIAMS RH
Citation: Sa. Clark et al., AN INVESTIGATION OF THE ELECTRICAL AND CHEMICAL-PROPERTIES OF INTIMATE METAL-INYAL1-YAS(100) INTERFACES, Journal of applied physics, 75(5), 1994, pp. 2481-2488
Authors:
HOOPER SE
WILKS SP
ELLIOT M
WESTWOOD DI
WOOLF DA
WILLIAMS RH
Citation: Se. Hooper et al., EVALUATION OF OHMIC CONTACTS TO GAAS(100) AND (111)B USING INAS GAAS SHORT-PERIOD SUPERLATTICE AND INGAAS INTERMEDIATE LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1727-1730
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