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Results: 1-15 |
Results: 15
An overview of radiation effects on electronics in the space telecommunications environment
Authors: Fleetwood, DM Winokur, PS Dodd, PE
Citation: Dm. Fleetwood et al., An overview of radiation effects on electronics in the space telecommunications environment, MICROEL REL, 40(1), 2000, pp. 17-26
Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants
Authors: Witczak, SC Winokur, PS Lacoe, RC Mayer, DC
Citation: Sc. Witczak et al., Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants, J APPL PHYS, 87(11), 2000, pp. 8206-8208
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS
Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Implications of radiation-induced dopant deactivation for npn bipolar junction transistors
Authors: Witczak, SC Lacoe, RC Shaneyfelt, MR Mayer, DC Schwank, JR Winokur, PS
Citation: Sc. Witczak et al., Implications of radiation-induced dopant deactivation for npn bipolar junction transistors, IEEE NUCL S, 47(6), 2000, pp. 2281-2288
Dielectric breakdown of thin oxides during ramped current-temperature stress
Authors: Fleetwood, DM Riewe, LC Winokur, PS Sexton, FW
Citation: Dm. Fleetwood et al., Dielectric breakdown of thin oxides during ramped current-temperature stress, IEEE NUCL S, 47(6), 2000, pp. 2305-2310
Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
Authors: Shaneyfelt, MR Schwank, JR Witczak, SC Fleetwood, DM Pease, RL Winokur, PS Riewe, LC Hash, GL
Citation: Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545
Thermally stimulated current in SiO2
Authors: Fleetwood, DM Reber, RA Riewe, LC Winokur, PS
Citation: Dm. Fleetwood et al., Thermally stimulated current in SiO2, MICROEL REL, 39(9), 1999, pp. 1323-1336
Use of COTS microelectronics in radiation environments
Authors: Winokur, PS Lum, GK Shaneyfelt, MR Sexton, FW Hash, GL Scott, L
Citation: Ps. Winokur et al., Use of COTS microelectronics in radiation environments, IEEE NUCL S, 46(6), 1999, pp. 1494-1503
The role of electron transport and trapping in MOS total-dose modeling
Authors: Fleetwood, DM Winokur, PS Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., The role of electron transport and trapping in MOS total-dose modeling, IEEE NUCL S, 46(6), 1999, pp. 1519-1525
Stability of trapped electrons in SiO2
Authors: Fleetwood, DM Winokur, PS Flament, O Leray, JL
Citation: Dm. Fleetwood et al., Stability of trapped electrons in SiO2, APPL PHYS L, 74(20), 1999, pp. 2969-2971
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676
Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge
Authors: Fleetwood, DM Winokur, PS Shaneyfelt, MR Riewe, LC Flament, O Paillet, P Leray, JL
Citation: Dm. Fleetwood et al., Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge, IEEE NUCL S, 45(6), 1998, pp. 2366-2374
Impact of ion energy on single-event upset
Authors: Dodd, PE Musseau, O Shaneyfelt, MR Sexton, FW D'hose, C Hash, GL Martinez, M Loemker, RA Leray, JL Winokur, PS
Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491
Radiation effects on surface micromachined comb drives and microengines
Authors: Schanwald, LP Schwank, JR Sniegowski, JJ Walsh, DS Smith, NF Peterson, KA Shaneyfelt, MR Winokur, PS Smith, JH Doyle, BL
Citation: Lp. Schanwald et al., Radiation effects on surface micromachined comb drives and microengines, IEEE NUCL S, 45(6), 1998, pp. 2789-2798
Risultati: 1-15 |