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Results: 1-25 | 26-26
Results: 1-25/26
Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors
Authors: Huang, JJ Hattendorf, M Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors, IEEE ELEC D, 22(4), 2001, pp. 157-159
Low-noise solar-blind AlxGa1-xN-based metal semiconductor-metal ultraviolet photodetectors
Authors: Li, T Lambert, DJH Beck, AL Collins, CJ Yang, B Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation: T. Li et al., Low-noise solar-blind AlxGa1-xN-based metal semiconductor-metal ultraviolet photodetectors, J ELEC MAT, 30(7), 2001, pp. 872-877
Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition, J APPL PHYS, 90(4), 2001, pp. 1817-1822
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Authors: Shelton, BS Lambert, DJH Huang, JJ Wong, MM Chowdhury, U Zhu, TG Kwon, HK Liliental-Weber, Z Benarama, M Feng, M Dupuis, RD
Citation: Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors
Authors: Li, T Lambert, DJH Wong, MM Collins, CJ Yang, B Beck, AL Chowdhury, U Dupuis, RD Campbell, JC
Citation: T. Li et al., Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors, IEEE J Q EL, 37(4), 2001, pp. 538-545
Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors
Authors: Huang, JJ Caruth, D Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors, ELECTR LETT, 37(6), 2001, pp. 393-395
AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition
Authors: Wong, MM Denyszyn, JC Collins, CJ Chowdhury, U Zhu, TG Kim, KS Dupuis, RD
Citation: Mm. Wong et al., AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition, ELECTR LETT, 37(19), 2001, pp. 1188-1190
Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment
Authors: Shelton, BS Zhu, TG Wong, MM Kwon, HK Eiting, CJ Lambert, DJH Turini, SP Dupuis, RD
Citation: Bs. Shelton et al., Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment, EL SOLID ST, 3(2), 2000, pp. 87-89
Developmental perspectives on risk and vulnerability in alcoholic families
Authors: Leonard, KE Das Eiden, R Wong, MM Zucker, RA Puttler, LI Fitzgerald, HE Hussong, A Chassin, L Mudar, P
Citation: Ke. Leonard et al., Developmental perspectives on risk and vulnerability in alcoholic families, ALC CLIN EX, 24(2), 2000, pp. 238-240
Characteristics of alcohol consumption, correlates of alcohol misuse amongKorean American adolescents
Authors: Nakashima, J Wong, MM
Citation: J. Nakashima et Mm. Wong, Characteristics of alcohol consumption, correlates of alcohol misuse amongKorean American adolescents, J DRUG EDUC, 30(3), 2000, pp. 343-359
Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Wong, MM Shelton, BS Zhu, TG Liliental-Weber, Z Benamura, M Dupuis, RD
Citation: Hk. Kwon et al., Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 240-245
Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 362-367
The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition
Authors: Lambert, DJH Huang, JJ Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Liliental-Weber, Z Benarama, M Feng, M Dupuis, RD
Citation: Djh. Lambert et al., The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition, J CRYST GR, 221, 2000, pp. 730-733
High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer
Authors: Zhu, TG Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Kwon, HK Dupuis, RD
Citation: Tg. Zhu et al., High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer, ELECTR LETT, 36(23), 2000, pp. 1971-1972
High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors
Authors: Yang, B Lambert, DJH Li, T Collins, CJ Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation: B. Yang et al., High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors, ELECTR LETT, 36(22), 2000, pp. 1866-1867
Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors
Authors: Li, T Lambert, DJH Beck, AL Collins, CJ Yang, B Wong, MM Chowdhury, U Dupuis, RD Campbell, JC
Citation: T. Li et al., Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors, ELECTR LETT, 36(18), 2000, pp. 1581-1583
Graded-emitter AlGaN/GaN heterojunction bipolar transistors
Authors: Huang, JJ Hattendorf, M Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Graded-emitter AlGaN/GaN heterojunction bipolar transistors, ELECTR LETT, 36(14), 2000, pp. 1239-1240
AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition
Authors: Shelton, BS Huang, JJ Lambert, DJH Zhu, TG Wong, MM Eiting, CJ Kwon, HK Feng, M Dupuis, RD
Citation: Bs. Shelton et al., AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition, ELECTR LETT, 36(1), 2000, pp. 80-81
Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes
Authors: Collins, CJ Li, T Lambert, DJH Wong, MM Dupuis, RD Campbell, JC
Citation: Cj. Collins et al., Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes, APPL PHYS L, 77(18), 2000, pp. 2810-2812
High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
Authors: Zhu, TG Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Dupuis, RD
Citation: Tg. Zhu et al., High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching, APPL PHYS L, 77(18), 2000, pp. 2918-2920
Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Wong, MM Dupuis, RD Liliental-Weber, Z Benamara, M
Citation: Hk. Kwon et al., Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition, APPL PHYS L, 77(16), 2000, pp. 2503-2505
Back illuminated AlGaN solar-blind photodetectors
Authors: Lambert, DJH Wong, MM Chowdhury, U Collins, C Li, T Kwon, HK Shelton, BS Zhu, TG Campbell, JC Dupuis, RD
Citation: Djh. Lambert et al., Back illuminated AlGaN solar-blind photodetectors, APPL PHYS L, 77(12), 2000, pp. 1900-1902
Recent advances in plastic packaging of flip-chip and multichip modules (MCM) of microelectronics
Authors: Wong, CP Wong, MM
Citation: Cp. Wong et Mm. Wong, Recent advances in plastic packaging of flip-chip and multichip modules (MCM) of microelectronics, IEEE T COMP, 22(1), 1999, pp. 21-25
Heterogeneity of risk aggregation for alcohol problems between early and middle childhood: Nesting structure variations
Authors: Wong, MM Zucker, RA Puttler, LI Fitzgerald, HE
Citation: Mm. Wong et al., Heterogeneity of risk aggregation for alcohol problems between early and middle childhood: Nesting structure variations, DEV PSYCHOP, 11(4), 1999, pp. 727-744
Characterization of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Eiting, CJ Lambert, DJH Kwon, HK Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Cj. Eiting et al., Characterization of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition, PHYS ST S-B, 216(1), 1999, pp. 193-197
Risultati: 1-25 | 26-26