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Results: 1-25 | 26-27
Results: 1-25/27
FAST SUBMILLIMETER PHOTOCONDUCTIVITY IN 2 -DIMENSIONAL ELECTRON-GAS AT GAAS-ALGAAS HETEROTRANSITION BOUNDARY
Authors: AVERBUKH BY BEREGULIN EV IVANOV SV KOPEV PS YAROSHETSKII ID
Citation: By. Averbukh et al., FAST SUBMILLIMETER PHOTOCONDUCTIVITY IN 2 -DIMENSIONAL ELECTRON-GAS AT GAAS-ALGAAS HETEROTRANSITION BOUNDARY, Fizika tverdogo tela, 38(10), 1996, pp. 3144-3151
ENERGY RELAXATION OF HOT CARRIERS IN A SHORT-PERIOD SEMICONDUCTOR SUPERLATTICE
Authors: GRESHNEVIKOVA OE IVANOV SV KOPEV PS NEKRASOV VY TRUKHIN VN YAROSHETSKII ID
Citation: Oe. Greshnevikova et al., ENERGY RELAXATION OF HOT CARRIERS IN A SHORT-PERIOD SEMICONDUCTOR SUPERLATTICE, Semiconductors, 29(9), 1995, pp. 871-872
VISIBLE AND IR ELECTROLUMINESCENCE OF POROUS SILICON
Authors: BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID KOCH F PETROVAKOCH V
Citation: Lv. Belyakov et al., VISIBLE AND IR ELECTROLUMINESCENCE OF POROUS SILICON, Semiconductors, 29(7), 1995, pp. 667-670
MEASUREMENT OF THE ENERGY OF INTERFACE DONOR CENTERS IN A GASB INAS/GASB QUANTUM-WELL/
Authors: DMITRIEV AP EMELYANOV SA IVANOV SV MELTSER BY TERENTEV YV YAROSHETSKII ID
Citation: Ap. Dmitriev et al., MEASUREMENT OF THE ENERGY OF INTERFACE DONOR CENTERS IN A GASB INAS/GASB QUANTUM-WELL/, Semiconductors, 29(6), 1995, pp. 557-558
ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/
Authors: AVERBUKH BY ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID
Citation: By. Averbukh et al., ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/, Semiconductors, 29(4), 1995, pp. 327-330
PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM
Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Av. Andrianov et al., PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM, Semiconductors, 29(4), 1995, pp. 381-384
LINEAR-CIRCULAR DICHROISM DURING 2-PHOTON LIGHT-ABSORPTION IN CDSE NANOCRYSTALS
Authors: GRESHNEVIKOVA OE KUDRYAVTSEV IA NEKRASOV VY TRUKHIN VN YAROSHETSKII ID
Citation: Oe. Greshnevikova et al., LINEAR-CIRCULAR DICHROISM DURING 2-PHOTON LIGHT-ABSORPTION IN CDSE NANOCRYSTALS, Fizika tverdogo tela, 37(2), 1995, pp. 580-583
PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR THIN DIELECTRIC INTERFACE ON HIGH-RESISTANCE CRYSTALS WITH DEEP ADMIXED LEVELS
Authors: KASHERININOV PG MATYUKHIN DG YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR THIN DIELECTRIC INTERFACE ON HIGH-RESISTANCE CRYSTALS WITH DEEP ADMIXED LEVELS, Pis'ma v Zurnal tehniceskoj fiziki, 21(7), 1995, pp. 44-49
PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES
Authors: ZINOVEV NN ANDRIANOV AV AVERBUKH BY YAROSHETSKII ID CHENG TS JENKINS LC HOOPER SE FOXON CT ORTON JW
Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121
POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION
Authors: GORYACHEV DN BELYAKOV LV SRESELI OM YAROSHETSKII ID
Citation: Dn. Goryachev et al., POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION, Semiconductor science and technology, 10(3), 1995, pp. 373-374
PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR-DIELECTRIC THIN-LAYER INTERFACE ON HIGH-RESISTANCE COMPENSATED CRYSTALS
Authors: KASHERININOV PG KICHAEV AV YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR-DIELECTRIC THIN-LAYER INTERFACE ON HIGH-RESISTANCE COMPENSATED CRYSTALS, Zurnal tehniceskoj fiziki, 65(9), 1995, pp. 193-197
KINETICS OF EXCITON LUMINESCENCE IN SILIC ON UNDER THE PHONON PULSE INJECTION
Authors: ZINOVEV NN KOVALEV DI KOZUB VI YAROSHETSKII ID
Citation: Nn. Zinovev et al., KINETICS OF EXCITON LUMINESCENCE IN SILIC ON UNDER THE PHONON PULSE INJECTION, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 106(2), 1994, pp. 585-595
KINETICS OF EXCITON LUMINESCENCE IN SILIC ON UNDER THE PHONON PULSE INJECTION
Authors: ZINOVEV NN KOVALEV DI KOZUB VI YAROSHETSKII ID
Citation: Nn. Zinovev et al., KINETICS OF EXCITON LUMINESCENCE IN SILIC ON UNDER THE PHONON PULSE INJECTION, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 106(2), 1994, pp. 585-595
ENHANCED RAMAN-SCATTERING IN POROUS SILICON
Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID AVERBUKH BY
Citation: Av. Andrianov et al., ENHANCED RAMAN-SCATTERING IN POROUS SILICON, Semiconductors, 28(12), 1994, pp. 1213-1215
SEMICONDUCTING HETEROSTRUCTURE OF ELECTRO OPTICAL-NONELECTROOPTICAL CRYSTAL ON HYDRATED SILICON-CADMIUM TELLURIDE SYSTEM
Authors: KASHERININOV PG MEZDROGINA MM YAROSHETSKII ID
Citation: Pg. Kasherininov et al., SEMICONDUCTING HETEROSTRUCTURE OF ELECTRO OPTICAL-NONELECTROOPTICAL CRYSTAL ON HYDRATED SILICON-CADMIUM TELLURIDE SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 24-29
PHOTOELECTRIC PHENOMENA IN SEMICONDUCTOR- DIELECTRIC THIN-LAYER INTERFACE STRUCTURE ON HIGH OHMIC PURE-CRYSTALS
Authors: KASHERININOV PG KICHAEV AV TOMASOV AA YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRIC PHENOMENA IN SEMICONDUCTOR- DIELECTRIC THIN-LAYER INTERFACE STRUCTURE ON HIGH OHMIC PURE-CRYSTALS, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 16-21
EXPERIMENTAL-OBSERVATION OF DRAG OF 2D ELECTRONS BY FAR-IR LIGHT
Authors: BEREGULIN EV VORONOV PM IVANOV SV KOPEV PS YAROSHETSKII ID
Citation: Ev. Beregulin et al., EXPERIMENTAL-OBSERVATION OF DRAG OF 2D ELECTRONS BY FAR-IR LIGHT, JETP letters, 59(2), 1994, pp. 85-88
LIGHT-SENSITIVE POROUS-SILICON SCHOTTKY STRUCTURES
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., LIGHT-SENSITIVE POROUS-SILICON SCHOTTKY STRUCTURES, Semiconductors, 27(8), 1993, pp. 758-759
EFFICIENT ELECTROLUMINESCENCE OF POROUS SILICON
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., EFFICIENT ELECTROLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(11-12), 1993, pp. 999-1001
ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES
Authors: BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID
Citation: Lv. Belyakov et al., ROLE OF LIGHT IN THE FORMATION OF POROUS SILICON ON P-TYPE SUBSTRATES, Semiconductors, 27(11-12), 1993, pp. 1078-1080
TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON
Authors: ANDRIANOV AV KOVALEV DI SHUMAN VB YAROSHETSKII ID
Citation: Av. Andrianov et al., TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(1), 1993, pp. 71-73
LINEAR PHOTOGALVANIC EFFECT IN P-GASB IN THE IR AND SUBMILLIMETER RANGES
Authors: BEREGULIN EV GANICHEV SD GLUKH KY LYANDAGELLER YB YAROSHETSKII ID
Citation: Ev. Beregulin et al., LINEAR PHOTOGALVANIC EFFECT IN P-GASB IN THE IR AND SUBMILLIMETER RANGES, Fizika tverdogo tela, 35(2), 1993, pp. 461-464
POLARIZED PHOTOLUMINESCENCE OF POROUS SIL ICON
Authors: ANDRIANOV AV KOVALEV DI YAROSHETSKII ID
Citation: Av. Andrianov et al., POLARIZED PHOTOLUMINESCENCE OF POROUS SIL ICON, Fizika tverdogo tela, 35(10), 1993, pp. 2677-2683
FAST NONLINEAR-OPTICAL MEDIA ON ELECTROOP TICAL-NONELECTRICAL CRYSTAL(CDTE-ALPHA-SI) HETEROSTRUCTURES
Authors: KASHERININOV PG KICHAEV AV KUZMIN SL MEZDROGINA MM YAROSHETSKII ID
Citation: Pg. Kasherininov et al., FAST NONLINEAR-OPTICAL MEDIA ON ELECTROOP TICAL-NONELECTRICAL CRYSTAL(CDTE-ALPHA-SI) HETEROSTRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 47-50
SEMICONDUCTING PHOTOSENSOR WITH LIGHT-CON TROLLED PHOTO-SENSITIVE DOMAIN
Authors: KASHERININOV PG KICHAEV AV KUZMIN SL YAROSHETSKII ID
Citation: Pg. Kasherininov et al., SEMICONDUCTING PHOTOSENSOR WITH LIGHT-CON TROLLED PHOTO-SENSITIVE DOMAIN, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 51-54
Risultati: 1-25 | 26-27