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Results:
1-21
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Results: 21
Authors:
Yankov, RA
Mandl, S
Citation: Ra. Yankov et S. Mandl, Plasma immersion ion implantation for silicon processing, ANN PHYSIK, 10(4), 2001, pp. 279-298
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Yankov, RA
Rebohle, L
Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Rebohle, L
Skorupa, W
Yankov, RA
Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Authors:
Rybin, PV
Kulikov, DV
Trushin, YV
Yankov, RA
Voelskow, M
Scharmann, F
Pezoldt, J
Citation: Pv. Rybin et al., Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields, NUCL INST B, 178, 2001, pp. 269-274
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range effect in proximity gettering of impurities in silicon, VACUUM, 62(2-3), 2001, pp. 309-313
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Rebohle, L
Misiuk, A
Yankov, RA
Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Authors:
Pezoldt, J
Rybin, PV
Kulikov, DV
Trushin, YV
Yankov, RA
Voelskow, M
Kreissig, U
Citation: J. Pezoldt et al., The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation, NUCL INST B, 166, 2000, pp. 758-763
Authors:
Gueorguiev, YM
Kogler, R
Peeva, K
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Trans-projected-range gettering of copper in high-energy ion-implanted silicon, J APPL PHYS, 88(11), 2000, pp. 6934-6936
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Mucklich, A
Panknin, D
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., High-energy ion-implantation-induced gettering of copper in silicon beyondthe projected ion range: The trans-projected-range effect, J APPL PHYS, 88(10), 2000, pp. 5645-5652
Authors:
Pezoldt, J
Yankov, RA
Werninghaus, T
Zahn, DRT
Fukarek, W
Teichert, G
Luebbe, M
Skorupa, W
Citation: J. Pezoldt et al., Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods, DIAM RELAT, 8(2-5), 1999, pp. 346-351
Authors:
Yankov, RA
Skorupa, W
Citation: Ra. Yankov et W. Skorupa, Comment on "Gettering of Cu by He-induced cavities in SIMOX materials", NUCL INST B, 149(4), 1999, pp. 445-446
Authors:
Fichtner, PFP
Kaschny, JR
Behar, M
Yankov, RA
Mucklich, A
Skorupa, W
Citation: Pfp. Fichtner et al., The effects of the annealing temperature on the formation of helium-filledstructures in silicon, NUCL INST B, 148(1-4), 1999, pp. 329-333
Authors:
Kogler, R
Yankov, RA
Posselt, M
Danilin, AB
Skorupa, W
Citation: R. Kogler et al., Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile, NUCL INST B, 147(1-4), 1999, pp. 96-100
Authors:
Pezoldt, J
Yankov, RA
Mucklich, A
Fukarek, W
Voelskow, M
Reuther, H
Skorupa, W
Citation: J. Pezoldt et al., A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams, NUCL INST B, 147(1-4), 1999, pp. 273-278
Authors:
Rybin, PV
Kulikov, DV
Trushin, YV
Yankov, RA
Ecke, G
Fukarek, W
Skorupa, W
Pezoldt, J
Citation: Pv. Rybin et al., Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions, NUCL INST B, 147(1-4), 1999, pp. 279-285
Authors:
Smirnov, VK
Kibalov, DS
Krivelevich, SA
Lepshin, PA
Potapov, EV
Yankov, RA
Skorupa, W
Makarov, VV
Danilin, AB
Citation: Vk. Smirnov et al., Wave-ordered structures formed on SOI wafers by reactive ion beams, NUCL INST B, 147(1-4), 1999, pp. 310-315
Authors:
Uchikoga, S
Lai, DF
Robertson, J
Milne, WI
Hatzopoulos, N
Yankov, RA
Weiler, M
Citation: S. Uchikoga et al., Low-temperature anodic oxidation of silicon using a wave resonance plasma source, APPL PHYS L, 75(5), 1999, pp. 725-727
Authors:
Gueorguiev, YM
Kogler, R
Peeva, A
Panknin, D
Mucklich, A
Yankov, RA
Skorupa, W
Citation: Ym. Gueorguiev et al., Impurity gettering by high-energy ion implantation in silicon beyond the projected range, APPL PHYS L, 75(22), 1999, pp. 3467-3469
Authors:
Kachurin, GA
Leier, AF
Zhuravlev, KS
Tyschenko, IE
Gutakovskii, AK
Volodin, VA
Skorupa, W
Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
Authors:
Naser, A
Gehlhoff, W
Overhof, H
Yankov, RA
Citation: A. Naser et al., Identification of a donor state of substitutional cadmium in silicon, PHYS ST S-B, 210(2), 1998, pp. 753-757
Authors:
Tyschenko, IE
Rebohle, L
Yankov, RA
Skorupa, W
Misiuk, A
Kachurin, GA
Citation: Ie. Tyschenko et al., The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films, J LUMINESC, 80(1-4), 1998, pp. 229-233
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1-21
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