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Results: 1-23 |
Results: 23
Photoluminescence kinetics in GaAs under the influence of surface acousticwaves
Authors: Zhuravlev, KS Gilinskii, AM Tsarev, AV Nikolaenko, AE
Citation: Ks. Zhuravlev et al., Photoluminescence kinetics in GaAs under the influence of surface acousticwaves, SEMICONDUCT, 35(8), 2001, pp. 895-899
Optical properties of germanium monolayers on silicon
Authors: Burbaev, TM Zavaritskaya, TN Kurbatov, VA Mel'nik, NN Tsvetkov, VA Zhuravlev, KS Markov, VA Nikiforov, AI
Citation: Tm. Burbaev et al., Optical properties of germanium monolayers on silicon, SEMICONDUCT, 35(8), 2001, pp. 941-946
Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Yankov, RA Rebohle, L Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions
Authors: Kachurin, GA Yanovskaya, SG Zhuravlev, KS Ruault, MO
Citation: Ga. Kachurin et al., The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions, SEMICONDUCT, 35(10), 2001, pp. 1182-1186
Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Misiuk, A Rebohle, L Skorupa, W Yankov, RA Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Kinetics of exciton photoluminescence in type-II semiconductor superlattices - art. no. 195305
Authors: Braginsky, LS Zaharov, MY Gilinsky, AM Preobrazhenskii, VV Putyato, MA Zhuravlev, KS
Citation: Ls. Braginsky et al., Kinetics of exciton photoluminescence in type-II semiconductor superlattices - art. no. 195305, PHYS REV B, 6319(19), 2001, pp. 5305
Self-trapped exciton recombination in silicon nanocrystals - art. no. 115423
Authors: Kobitski, AY Zhuravlev, KS Wagner, HP Zahn, DRT
Citation: Ay. Kobitski et al., Self-trapped exciton recombination in silicon nanocrystals - art. no. 115423, PHYS REV B, 6311(11), 2001, pp. 5423
Millisecond phosphorescence of free electrons in pure GaAs
Authors: Gilinsky, AM Zhuravlev, KS
Citation: Am. Gilinsky et Ks. Zhuravlev, Millisecond phosphorescence of free electrons in pure GaAs, APPL PHYS L, 79(21), 2001, pp. 3455-3457
The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers
Authors: Kachurin, GA Yanovskaya, SG Ruault, MO Gutakovskii, AK Zhuravlev, KS Kaitasov, O Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970
Photoresistance of Si/Ge/Si structures with germanium quantum dots
Authors: Shegai, OA Zhuravlev, KS Markov, VA Nikiforov, AI Pchelyakov, OP
Citation: Oa. Shegai et al., Photoresistance of Si/Ge/Si structures with germanium quantum dots, SEMICONDUCT, 34(11), 2000, pp. 1311-1315
Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide
Authors: Zhuravlev, KS Kobitsky, AY
Citation: Ks. Zhuravlev et Ay. Kobitsky, Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide, SEMICONDUCT, 34(10), 2000, pp. 1203-1206
Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure
Authors: Tyschenko, IE Zhuravlev, KS Vandyshev, EN Rebohle, L Misiuk, A Yankov, RA Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices
Authors: Zhuravlev, KS Petrakov, DA Gilinsky, AM Shamirzaev, TS Preobrazhenskii, VV Semyagin, BR Putyato, MA
Citation: Ks. Zhuravlev et al., Evidence for interlayer donor-acceptor recombination in type IIGaAs/AlAs superlattices, SUPERLATT M, 28(2), 2000, pp. 105-110
RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots
Authors: Markov, VA Cheng, HH Chia, CT Nikiforov, AI Cherepanov, VA Pchelyakov, OP Zhuravlev, KS Talochkin, AB McGlynn, E Henry, MO
Citation: Va. Markov et al., RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots, THIN SOL FI, 369(1-2), 2000, pp. 79-83
Polariton luminescence in high-purity layers of AlGaAs solid solutions
Authors: Shamirzaev, TS Zhuravlev, KS Toropov, AI Bakarov, AK
Citation: Ts. Shamirzaev et al., Polariton luminescence in high-purity layers of AlGaAs solid solutions, JETP LETTER, 71(4), 2000, pp. 148-150
Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bakarov, AK
Citation: Ks. Zhuravlev et al., Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy, APPL PHYS L, 76(9), 2000, pp. 1131-1133
Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors
Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bazarov, AK Rakov, YN Myakishev, YB
Citation: Ks. Zhuravlev et al., Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors, TECH PHYS L, 25(8), 1999, pp. 595-597
Light particle irradiation effects in Si nanocrystals
Authors: Kachurin, GA Ruault, MO Gutakovsky, AK Kaitasov, O Yanovskaya, SG Zhuravlev, KS Bernas, H
Citation: Ga. Kachurin et al., Light particle irradiation effects in Si nanocrystals, NUCL INST B, 147(1-4), 1999, pp. 356-360
Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance
Authors: Gritsenko, VA Zhuravlev, KS Milov, AD Wong, H Kwok, RWM Xu, JB
Citation: Va. Gritsenko et al., Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance, THIN SOL FI, 353(1-2), 1999, pp. 20-24
Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution
Authors: Shamirzaev, TS Zhuravlev, KS Yakusheva, NA
Citation: Ts. Shamirzaev et al., Free exciton recombination in heavily manganese-doped GaAs grown by liquid-phase epitaxy from bismuth solution, SOL ST COMM, 112(9), 1999, pp. 503-506
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma followed by low-temperature annealing
Authors: Zhuravlev, KS Sokolov, AL Mogil'nikov, KP
Citation: Ks. Zhuravlev et al., Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma followed by low-temperature annealing, SEMICONDUCT, 32(12), 1998, pp. 1293-1298
Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions
Authors: Kachurin, GA Leier, AF Zhuravlev, KS Tyschenko, IE Gutakovskii, AK Volodin, VA Skorupa, W Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
New complex defect in heavily doped GaAs : Zn grown by liquid phase epitaxy
Authors: Shamirzaev, TS Zhuravlev, KS Yakusheva, NA Petrenko, IP
Citation: Ts. Shamirzaev et al., New complex defect in heavily doped GaAs : Zn grown by liquid phase epitaxy, PHYS ST S-B, 210(2), 1998, pp. 317-320
Risultati: 1-23 |