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Results: 26-50/2122
Authors:
ALGORA C
DIAZ V
Citation: C. Algora et V. Diaz, DESIGN AND OPTIMIZATION OF VERY HIGH-POWER DENSITY MONOCHROMATIC GAASPHOTOVOLTAIC CELLS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2047-2054
Authors:
DATTA SK
JAIN PK
NARAYAN MDR
BASU BN
Citation: Sk. Datta et al., NONLINEAR EULERIAN HYDRODYNAMICAL ANALYSIS OF HELIX TRAVELING-WAVE TUBES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2055-2062
Authors:
KORY CL
DAYTON JA
Citation: Cl. Kory et Ja. Dayton, COMPUTATIONAL INVESTIGATION OF EXPERIMENTAL INTERACTION IMPEDANCE OBTAINED BY PERTURBATION FOR HELICAL TRAVELING-WAVE TUBE STRUCTURES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2063-2071
Authors:
HATFIELD CW
BILBRO GL
ALLEN ST
PALMOUR JW
Citation: Cw. Hatfield et al., DC I-V CHARACTERISTICS AND RF PERFORMANCE OF A 4H-SIC JFET AT 773 K, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2072-2074
Authors:
CHOI JH
KIM CS
LIM BC
JANG J
Citation: Jh. Choi et al., A NOVEL THIN-FILM-TRANSISTOR USING DOUBLE AMORPHOUS-SILICON ACTIVE LAYER, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2074-2076
Authors:
CHANG HH
KER MD
Citation: Hh. Chang et Md. Ker, IMPROVED OUTPUT ESD PROTECTION BY DYNAMIC GATE FLOATING DESIGN, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2076-2078
Authors:
HUANG R
ZHANG X
WANG YY
Citation: R. Huang et al., A HIGH-PERFORMANCE SOI DRIVE-IN GATE CONTROLLED HYBRID TRANSISTOR (DGCHT), I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2079-2081
Authors:
MATEOS J
PARDO D
GONZALEZ T
TADYSZAK P
DANNEVILLE F
CAPPY A
Citation: J. Mateos et al., INFLUENCE OF AL MOLE FRACTION ON THE NOISE PERFORMANCE OF GAAS ALXGA1-XAS, HEMTS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2081-2083
Authors:
LEE CT
Citation: Ct. Lee, OPTICALLY INDUCED SIDEGATING CURRENT ISOLATION OF GAAS-MESFET BY MULTIQUANTUM BARRIER, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2083-2085
Authors:
HO JJ
FANG YK
WU KH
HSIEH WT
HUANG SC
CHEN GS
JU MS
LIN JJ
Citation: Jj. Ho et al., HIGH-SPEED AMORPHOUS-SILICON GERMANIUM INFRARED-SENSORS PREPARED ON CRYSTALLINE SILICON SUBSTRATES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2085-2088
Authors:
DATTA S
SHI S
ROENKER KP
CAHAY MM
STANCHINA WE
Citation: S. Datta et al., SIMULATION AND DESIGN OF INALAS INGAAS PNP HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1634-1643
Authors:
BABIKER S
ASENOV A
CAMERON N
BEAUMONT SP
BARKER JR
Citation: S. Babiker et al., COMPLETE MONTE-CARLO RF ANALYSIS OF REAL SHORT-CHANNEL COMPOUND FETS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1644-1652
Authors:
ADLERSTEIN MG
Citation: Mg. Adlerstein, THERMAL-STABILITY OF EMITTER BALLASTED HBTS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1653-1655
Authors:
WADA S
TOKUSHIMA M
FUKAISHI M
MATSUNO N
YANO H
HIDA H
MAEDA T
Citation: S. Wada et al., 0.2-MU-M FULLY-SELF-ALIGNED Y-SHAPED GATE HJFETS WITH REDUCED GATE-FRINGING CAPACITANCE FABRICATED USING COLLIMATED SPUTTERING AND ELECTROLESS AU-PLATING, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1656-1662
Authors:
IQBAL MA
JONES BK
Citation: Ma. Iqbal et Bk. Jones, A COMPARISON OF THE TRAP PROPERTIES AND LOCATIONS WITHIN GAAS FIELD-EFFECT TRANSISTORS MEASURED UNDER DIFFERENT BIAS CONDITIONS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1663-1670
Authors:
SHEN WZ
PERERA AGU
FRANCOMBE MH
LIU HC
BUCHANAN M
SCHAFF WJ
Citation: Wz. Shen et al., EFFECT OF EMITTER LAYER CONCENTRATION ON THE PERFORMANCE OF GAAS P(-IHOMOJUNCTION FAR-INFRARED DETECTORS - A COMPARISON OF THEORY AND EXPERIMENT()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1671-1677
Authors:
MUNTEANU D
WEISER DA
CRISTOLOVEANU S
FAYNOT O
PELLOIE JL
FOSSUM JG
Citation: D. Munteanu et al., GENERATION-RECOMBINATION TRANSIENT EFFECTS IN PARTIALLY DEPLETED SOI TRANSISTORS - SYSTEMATIC EXPERIMENTS AND SIMULATIONS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1678-1683
Authors:
CHANG KM
LI CH
WANG SW
YEH TH
YANG JY
LEE TC
Citation: Km. Chang et al., THE RELAXATION PHENOMENA OF POSITIVE CHARGES IN THIN GATE OXIDE DURING FOWLER-NORDHEIM TUNNELING STRESS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1684-1689
Authors:
SUBRAMANIAN V
SARASWAT KC
Citation: V. Subramanian et Kc. Saraswat, OPTIMIZATION OF SILICON-GERMANIUM TFTS THROUGH THE CONTROL OF AMORPHOUS PRECURSOR CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1690-1695
Authors:
KIM DM
CHO MK
KWON WH
Citation: Dm. Kim et al., STACKED GATE MID-CHANNEL INJECTION FLASH EEPROM CELL - PART I - PROGRAMMING SPEED AND EFFICIENCY VERSUS DEVICE STRUCTURE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1696-1702
Authors:
KIM DM
CHO MK
KWON WH
Citation: Dm. Kim et al., STACKED GATE MID-CHANNEL INJECTION FLASH EEPROM CELL - PART II - ANALYSIS OF GATE CURRENT AND MODELING OF PROGRAMMING CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1703-1709
Authors:
DOSHI P
ROHATGI A
Citation: P. Doshi et A. Rohatgi, 18-PERCENT EFFICIENT SILICON PHOTOVOLTAIC DEVICES BY RAPID THERMAL-DIFFUSION AND OXIDATION, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1710-1716
Authors:
JIN W
CHAN PCH
CHAN MS
Citation: W. Jin et al., ON THE POWER DISSIPATION IN DYNAMIC THRESHOLD SILICON-ON-INSULATOR CMOS INVERTER, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1717-1724
Authors:
PATRI VS
KUMAR MJ
Citation: Vs. Patri et Mj. Kumar, PROFILE DESIGN CONSIDERATIONS FOR MINIMIZING BASE TRANSIT-TIME IN SIGE HBTS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1725-1731
Authors:
CHIANG CYT
HSU CTC
YEOW YT
GHODSI R
Citation: Cyt. Chiang et al., MEASUREMENT OF MOSFET SUBSTRATE DOPANT PROFILE VIA INVERSION LAYER-TO-SUBSTRATE CAPACITANCE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1732-1736