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Results: 151-175/1514
Authors:
PING AT
CHEN Q
YANG JW
KHAN MA
ADESIDA I
Citation: At. Ping et al., THE EFFECTS OF REACTIVE ION ETCHING-INDUCED DAMAGE ON THE CHARACTERISTICS OF OHMIC CONTACTS TO N-TYPE GAN, Journal of electronic materials, 27(4), 1998, pp. 261-265
Authors:
POTIN V
VERMAUT P
RUTERANA P
NOUET G
Citation: V. Potin et al., EXTENDED DEFECTS IN WURTZITE NITRIDE SEMICONDUCTORS, Journal of electronic materials, 27(4), 1998, pp. 266-275
Authors:
SANCHEZGARCIA MA
CALLEJA E
SANCHEZ FJ
CALLE F
MONROY E
BASAK D
MUNOZ E
VILLAR C
SANZHERVAS A
AGUILAR M
SERRANO JJ
BLANCO JM
Citation: Ma. Sanchezgarcia et al., GROWTH OPTIMIZATION AND DOPING WITH SI AND BE OF HIGH-QUALITY GAN ON SI(111) BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 276-281
Authors:
YOUTSEY C
BULMAN G
ADESIDA I
Citation: C. Youtsey et al., DOPANT-SELECTIVE PHOTOENHANCED WET ETCHING OF GAN, Journal of electronic materials, 27(4), 1998, pp. 282-287
Authors:
NIKOLAEV AE
RENDAKOVA SV
NIKITINA IP
VASSILEVSKI KV
DMITRIEV VA
Citation: Ae. Nikolaev et al., GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS, Journal of electronic materials, 27(4), 1998, pp. 288-291
Authors:
RENDAKOVA SV
NIKITINA IP
TREGUBOVA AS
DMITRIEV VA
Citation: Sv. Rendakova et al., MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 292-295
Authors:
HENNING JP
SCHOEN KJ
MELLOCH MR
WOODALL JM
COOPER JA
Citation: Jp. Henning et al., ELECTRICAL CHARACTERISTICS OF RECTIFYING POLYCRYSTALLINE SILICON SILICON-CARBIDE HETEROJUNCTIONS, Journal of electronic materials, 27(4), 1998, pp. 296-299
Authors:
MACMILLAN MF
HENRY A
JANZEN E
Citation: Mf. Macmillan et al., THICKNESS DETERMINATION OF LOW DOPED SIC EPI-FILMS ON HIGHLY DOPED SIC SUBSTRATES, Journal of electronic materials, 27(4), 1998, pp. 300-303
Authors:
SHIN W
SEO W
TAKAI O
KOUMOTO K
Citation: W. Shin et al., SURFACE-CHEMISTRY OF POROUS SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 304-307
Authors:
RAMACHANDRAN V
BRADY MF
SMITH AR
FEENSTRA RM
GREVE DW
Citation: V. Ramachandran et al., PREPARATION OF ATOMICALLY FLAT SURFACES ON SILICON-CARBIDE USING HYDROGEN ETCHING, Journal of electronic materials, 27(4), 1998, pp. 308-312
Authors:
UENO K
Citation: K. Ueno, ANOMALOUS OXIDATION RATE IN 6H-SIC DEPENDING ON THE PARTIAL-PRESSURE OF O-2 AND H2O, Journal of electronic materials, 27(4), 1998, pp. 313-316
Authors:
NEUDECK PG
Citation: Pg. Neudeck, PERIMETER GOVERNED MINORITY-CARRIER LIFETIMES IN 4H-SIC P(+)N DIODES MEASURED BY REVERSE RECOVERY SWITCHING TRANSIENT ANALYSIS, Journal of electronic materials, 27(4), 1998, pp. 317-323
Authors:
ODER TN
WILLIAMS JR
BOZACK MJ
IYER V
MOHNEY SE
CROFTON J
Citation: Tn. Oder et al., HIGH-TEMPERATURE STABILITY OF CHROMIUM BORIDE OHMIC CONTACTS TO P-TYPE 6H-SIC, Journal of electronic materials, 27(4), 1998, pp. 324-329
Authors:
LUCKOWSKI ED
DELUCCA JM
WILLIAMS JR
MOHNEY SE
BOZACK MJ
ISAACSSMITH T
CROFTON J
Citation: Ed. Luckowski et al., IMPROVED OHMIC CONTACT TO N-TYPE 4H AND 6H SIC USING NICHROME, Journal of electronic materials, 27(4), 1998, pp. 330-334
Authors:
KONSTANTINOV AO
WAHAB Q
NORDELL N
LINDEFELT U
Citation: Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341
Authors:
PROTZMANN H
WACHTENDORF B
SCHOEN O
SCHMITZ D
STRAUCH G
JUERGENSEN H
Citation: H. Protzmann et al., MOVPE PRODUCTION REACTORS FOR HIGH-TEMPERATURE ELECTRONICS, Journal of electronic materials, 27(4), 1998, pp. 342-344
Authors:
IM HJ
KACZER B
PELZ JP
LIMPIJUMNONG S
LAMBRECHT WRL
CHOYKE WJ
Citation: Hj. Im et al., NANOMETER-SCALE INVESTIGATION OF METAL-SIC INTERFACES USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of electronic materials, 27(4), 1998, pp. 345-352
Authors:
DAS MK
COOPER JA
MELLOCH MR
Citation: Mk. Das et al., EFFECT OF EPILAYER CHARACTERISTICS AND PROCESSING CONDITIONS ON THE THERMALLY OXIDIZED SIO2 SIC INTERFACE/, Journal of electronic materials, 27(4), 1998, pp. 353-357
Authors:
KIMOTO T
TAKEMURA O
MATSUNAMI H
NAKATA T
INOUE M
Citation: T. Kimoto et al., AL-SIC EPILAYERS AND APPLICATION TO PN JUNCTION DIODES( AND B+ IMPLANTATIONS INTO 6H), Journal of electronic materials, 27(4), 1998, pp. 358-364
Authors:
WEITZEL CE
MOORE KE
Citation: Ce. Weitzel et Ke. Moore, PERFORMANCE COMPARISON OF WIDE BANDGAP SEMICONDUCTOR RF POWER DEVICES, Journal of electronic materials, 27(4), 1998, pp. 365-369
Authors:
CAPANO MA
RYU S
MELLOCH MR
COOPER JA
BUSS MR
Citation: Ma. Capano et al., DOPANT ACTIVATION AND SURFACE-MORPHOLOGY OF ION-IMPLANTED 4H AND 6H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 370-376
Authors:
SINGH R
VEDULA L
GONG C
Citation: R. Singh et al., DEPENDENCE OF ACTIVATION-ENERGY OF MASS-TRANSPORT LIMITED REGION ON THE PHOTOSPECTRUM OF PHOTONS PARTICIPATING IN RAPID PHOTOTHERMAL ASSISTED CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 27(3), 1998, pp. 13-16
Authors:
VINOD KN
ZORMAN CA
YASSEEN AA
MEHREGANY M
Citation: Kn. Vinod et al., FABRICATION OF LOW DEFECT DENSITY 3C-SIC ON SIO2 STRUCTURES USING WAFER BONDING TECHNIQUES, Journal of electronic materials, 27(3), 1998, pp. 17-20
Authors:
LIN KL
WEN LH
LIU TP
Citation: Kl. Lin et al., THE MICROSTRUCTURES OF THE SN-ZN-AL SOLDER ALLOYS, Journal of electronic materials, 27(3), 1998, pp. 97-105
Authors:
ZHUKOV AE
USTINOV VM
EGOROV AY
KOVSH AR
TSATSULNIKOV AF
MAXIMOV MV
LEDENTSOV NN
ZAITSEV SV
GORDEEV NY
KOPCHATOV VI
SHERNYAKOV YM
KOPEV PS
BIMBERG D
ALFEROV ZI
Citation: Ae. Zhukov et al., INJECTION-LASERS BASED ON INGAAS QUANTUM DOTS IN AN ALGAAS MATRIX, Journal of electronic materials, 27(3), 1998, pp. 106-109