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Results: 26-50/1272
Authors:
CIAPPA M
MALBERTI P
FURCAS P
VANZI P
Citation: M. Ciappa et al., A NEW ADAPTIVE AMPLIFIER FOR BIASED ELECTRON-BEAM-INDUCED CURRENT APPLICATIONS, Microelectronics and reliability, 38(6-8), 1998, pp. 889-893
Authors:
MUHLE U
WIESNER A
SCHRAY S
Citation: U. Muhle et al., DETAILED INVESTIGATION OF SEM-RESULTS BY TEM AT ONE SAMPLE USING FIB-TECHNIQUE, Microelectronics and reliability, 38(6-8), 1998, pp. 895-899
Authors:
BENBRIK J
PERDU P
BENTEO B
DESPLATS R
LABAT N
TOUBOUL A
DANTO Y
Citation: J. Benbrik et al., INDUCED DAMAGES ON CMOS AND BIPOLAR INTEGRATED STRUCTURES UNDER FOCUSED ION-BEAM IRRADIATION, Microelectronics and reliability, 38(6-8), 1998, pp. 901-905
Authors:
PEREZ G
COURTADE F
BENTEO B
GAUFFIER JL
KWANG JL
Citation: G. Perez et al., JUNCTION DELINEATION AND EBIC ON FIB CROSS-SECTION, Microelectronics and reliability, 38(6-8), 1998, pp. 907-912
Authors:
HASHIKAWA N
FUKUMOTO K
KUROI T
IKENO M
MASHIKO Y
Citation: N. Hashikawa et al., DIRECT OBSERVATION OF LOCAL STRAIN FIELD FOR ULSI DEVICES, Microelectronics and reliability, 38(6-8), 1998, pp. 913-917
Authors:
PANTISANO L
PACCAGNELLA A
PETTARIN L
SCARPA A
VALENTINI G
BALDI L
ALBA S
Citation: L. Pantisano et al., A NEW EXPERIMENTAL-TECHNIQUE TO EVALUATE THE PLASMA-INDUCED DAMAGE ATWAFER LEVEL TESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 919-924
Authors:
VANDAMME EP
DEWOLF I
LAUWERS A
VANDAMME LKJ
Citation: Ep. Vandamme et al., LOW-FREQUENCY NOISE-ANALYSIS AS A DIAGNOSTIC-TOOL TO ASSESS THE QUALITY OF 0.25-MU-M TI-SILICIDED POLY LINES, Microelectronics and reliability, 38(6-8), 1998, pp. 925-929
Authors:
SHEEHAN E
HURLEY PK
MATHEWSON A
Citation: E. Sheehan et al., HOT-CARRIER DEGRADATION MECHANISMS IN SUBMICRON P-CHANNEL MOSFETS - IMPACT ON LOW-FREQUENCY (L F) NOISE BEHAVIOR/, Microelectronics and reliability, 38(6-8), 1998, pp. 931-936
Authors:
YCKACHE K
BOIVIN P
BAIGET F
RADJAA S
AURIEL G
SAGNES B
OUALID J
GLACHANT A
Citation: K. Yckache et al., RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE, Microelectronics and reliability, 38(6-8), 1998, pp. 937-942
Authors:
MONTELIUS L
JUNNO T
CARLSSON SB
MAGNUSSON MH
DEPPERT K
XU H
SAMUELSON L
Citation: L. Montelius et al., ASSEMBLY AND ANALYSIS OF QUANTUM DEVICES USING SPM BASED METHODS, Microelectronics and reliability, 38(6-8), 1998, pp. 943-950
Authors:
BANGERT J
KUBALEK E
Citation: J. Bangert et E. Kubalek, CIRCUIT INTERNAL LOGIC ANALYSIS WITH ELECTRIC FORCE MICROSCOPE- (EFM-) TESTING, Microelectronics and reliability, 38(6-8), 1998, pp. 951-956
Authors:
FIEGE GBM
FEIGE V
PHANG JCH
MAYWALD M
GORLICH S
BALK LJ
Citation: Gbm. Fiege et al., FAILURE ANALYSIS OF INTEGRATED DEVICES BY SCANNING THERMAL MICROSCOPY(STHM), Microelectronics and reliability, 38(6-8), 1998, pp. 957-961
Authors:
CRAMER RM
SCHADE WR
HEIDERHOFF R
BALK LJ
CHIN R
Citation: Rm. Cramer et al., SCANNING NEAR-FIELD OPTICAL MICROSCOPY ANALYSES OF ELECTRONIC DEVICES, Microelectronics and reliability, 38(6-8), 1998, pp. 963-968
Authors:
BAE S
SCHLENSOG A
MERTIN W
KUBALEK E
MAYWALD M
Citation: S. Bae et al., A NEW TEST METHOD FOR CONTACTLESS QUANTITATIVE CURRENT MEASUREMENT VIA SCANNING MAGNETO-RESISTIVE PROBE MICROSCOPY, Microelectronics and reliability, 38(6-8), 1998, pp. 969-974
Authors:
MIURA K
NAKAMAE K
FUJIOKA H
Citation: K. Miura et al., AUTOMATIC FAULT TRACING BY SUCCESSIVE CIRCUIT EXTRACTION FROM CAD LAYOUT DATA WITH THE CAD-LINKED EB TEST SYSTEM, Microelectronics and reliability, 38(6-8), 1998, pp. 975-980
Authors:
WITTPAHL V
BEHNKE U
WAND B
MERTIN W
Citation: V. Wittpahl et al., CANTILEVER INFLUENCE SUPPRESSION OF CONTACTLESS IC-TESTING BY ELECTRIC FORCE MICROSCOPY, Microelectronics and reliability, 38(6-8), 1998, pp. 981-986
Authors:
BURMER C
GORLICH S
PAUTHNER S
Citation: C. Burmer et al., APPLICATION OF LAYOUT OVERLAY FOR FAILURE ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 987-992
Authors:
ITO S
MONMA H
Citation: S. Ito et H. Monma, FAILURE ANALYSIS OF WAFER USING BACKSIDE OBIC METHOD, Microelectronics and reliability, 38(6-8), 1998, pp. 993-996
Authors:
BOCK K
GROESENEKEN G
MAES HE
Citation: K. Bock et al., ESD PROTECTION METHODOLOGY FOR DEEP-SUBMICRON CMOS, Microelectronics and reliability, 38(6-8), 1998, pp. 997-1007
Authors:
VANOLMEN J
MANCA JV
DECEUNINCK W
DESCHEPPER L
DHAEGER V
WITVROUW A
MAEX K
Citation: J. Vanolmen et al., OVERVIEW OF THE KINETICS OF THE EARLY STAGES OF ELECTROMIGRATION UNDER LOW (= REALISTIC) CURRENT-DENSITY STRESS, Microelectronics and reliability, 38(6-8), 1998, pp. 1009-1013
Authors:
SPOLENAK R
KRAFT O
ARZT E
Citation: R. Spolenak et al., EFFECTS OF ALLOYING ELEMENTS ON ELECTROMIGRATION, Microelectronics and reliability, 38(6-8), 1998, pp. 1015-1020
Authors:
FOLEY S
SCORZONI A
BALBONI R
IMPRONTA M
DEMUNARI I
MATHEWSON A
FANTINI F
Citation: S. Foley et al., A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1021-1027
Authors:
ARNAUD L
GONELLA R
TARTAVEL G
TORRES J
GOUNELLE C
GOBIL Y
MORAND Y
Citation: L. Arnaud et al., ELECTROMIGRATION FAILURE MODES IN DAMASCENE COPPER INTERCONNECTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1029-1034
Authors:
WITVROUW A
MAEX K
DECEUNINCK W
LEKENS G
DHAEN J
DESCHEPPER L
Citation: A. Witvrouw et al., THE DEPENDENCE OF STRESS-INDUCED VOIDING ON LINE-WIDTH STUDIED BY CONVENTIONAL AND HIGH-RESOLUTION RESISTANCE MEASUREMENTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1035-1040
Authors:
WALTZ P
ARNAUD L
LORMAND G
TARTAVEL G
Citation: P. Waltz et al., LATERAL INTERFACE EFFECT ON PULSED DC ELECTROMIGRATION ANALYSIS, Microelectronics and reliability, 38(6-8), 1998, pp. 1041-1046