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Results: 201-225/544
Authors:
KOTECKI DE
Citation: De. Kotecki, A REVIEW OF HIGH DIELECTRIC MATERIALS FOR DRAM CAPACITORS, Integrated ferroelectrics, 16(1-4), 1997, pp. 1-19
Authors:
DEY SK
MELNICK BM
TAYLOR DJ
Citation: Sk. Dey et al., PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA MARCH 18-20 1996 .3., Integrated ferroelectrics, 16(1-4), 1997, pp. 15-16
Authors:
TORII K
KAWAKAMI H
MIKI H
KUSHIDA K
ITOGA T
GOTO Y
KUMIHASHI T
YOKOYAMA N
MONIWA M
SHOJI K
KAGA T
FUJISAKI Y
Citation: K. Torii et al., PROCESS AND PROPERTIES OF PT PB(ZR,TI)O-3/PT INTEGRATED FERROELECTRICCAPACITORS/, Integrated ferroelectrics, 16(1-4), 1997, pp. 21-28
Authors:
HASE T
NOGUCHI T
MIYASAKA Y
Citation: T. Hase et al., ANALYSIS OF THE DEGRADATION OF PZT AND SRBI2TA2O9 THIN-FILMS WITH A REDUCTIVE PROCESS, Integrated ferroelectrics, 16(1-4), 1997, pp. 29-40
Authors:
UCHIDA H
SOYAMA N
KAGEYAMA K
OGI K
SCOTT MC
CUCHIARO JD
DERBENWICK GF
MCMILLAN LD
DEARAUJO CAP
Citation: H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS, Integrated ferroelectrics, 16(1-4), 1997, pp. 41-52
Authors:
COFER A
RAJORA P
DEORNELLAS S
KEIL D
Citation: A. Cofer et al., PLASMA ETCH PROCESSING OF ADVANCED FERROELECTRIC DEVICES, Integrated ferroelectrics, 16(1-4), 1997, pp. 53-61
Authors:
TRAYNOR SD
HADNAGY TD
KAMMERDINER L
Citation: Sd. Traynor et al., CAPACITOR TEST SIMULATION OF RETENTION AND IMPRINT CHARACTERISTICS FOR FERROELECTRIC MEMORY OPERATION, Integrated ferroelectrics, 16(1-4), 1997, pp. 63-76
Authors:
WARREN WL
DIMOS D
TUTTLE BA
PIKE GE
ALSHAREEF HN
Citation: Wl. Warren et al., RELATIONSHIPS AMONG FERROELECTRIC FATIGUE, ELECTRONIC CHARGE TRAPPING, DEFECT-DIPOLES, AND OXYGEN VACANCIES IN PEROVSKITE OXIDES, Integrated ferroelectrics, 16(1-4), 1997, pp. 77-86
Authors:
SUIZU RI
CHAPMAN SP
Citation: Ri. Suizu et Sp. Chapman, THE EFFECTS OF FERROELECTRIC CAPACITOR TESTING METHODS ON PREDICTED IMPRINT FAILURE POINTS, Integrated ferroelectrics, 16(1-4), 1997, pp. 87-96
Authors:
CHUNG I
LEE JK
KIM CJ
CHUNG CW
Citation: I. Chung et al., INTEGRATION OF FERROELECTRIC CAPACITORS USING MULTILAYERED ELECTRODE, Integrated ferroelectrics, 16(1-4), 1997, pp. 97-108
Authors:
FARRELL CE
MILKOVE KR
WANG C
KOTECKI DE
Citation: Ce. Farrell et al., A REACTIVE ION ETCH STUDY FOR PRODUCING PATTERNED PLATINUM STRUCTURES, Integrated ferroelectrics, 16(1-4), 1997, pp. 109-138
Authors:
CHUNG CW
LEE JK
KIM CJ
CHUNG I
Citation: Cw. Chung et al., FABRICATION AND COMPARISON OF FERROELECTRIC CAPACITOR STRUCTURES FOR MEMORY APPLICATIONS, Integrated ferroelectrics, 16(1-4), 1997, pp. 139-147
Authors:
KIM CJ
LEE JK
CHUNG CW
CHUNG I
Citation: Cj. Kim et al., ETCHING EFFECTS TO PZT CAPACITORS WITH RUOX PT ELECTRODE BY USING INDUCTIVELY-COUPLED PLASMA/, Integrated ferroelectrics, 16(1-4), 1997, pp. 149-157
Authors:
STANNARD WB
JOHNSTON PN
WALKER SR
ELBOUANANI M
BUBB IF
SCOTT JF
COHEN DD
DYTLEWSKI N
MARTIN JW
Citation: Wb. Stannard et al., INTERDIFFUSION PHENOMENA IN SRBI2TA2O9 FILMS, Integrated ferroelectrics, 16(1-4), 1997, pp. 159-164
Authors:
LEE EG
WOUTERS DJ
WILLEMS G
MAES HE
Citation: Eg. Lee et al., EFFECTS OF TOP ELECTRODE ANNEALING ON THE PZT THIN-FILMS, Integrated ferroelectrics, 16(1-4), 1997, pp. 165-174
Authors:
AMANUMA K
KUNIO T
Citation: K. Amanuma et T. Kunio, ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 CAPACITORS FOR NONVOLATILE MEMORY OPERATION, Integrated ferroelectrics, 16(1-4), 1997, pp. 175-182
Authors:
CHA SY
LEE SH
LEE HC
Citation: Sy. Cha et al., TI THICKNESS EFFECTS IN PT TI BOTTOM ELECTRODE ON PROPERTIES OF (BA,SR)TIO3 THIN-FILM/, Integrated ferroelectrics, 16(1-4), 1997, pp. 183-190
Authors:
CHEN TS
BALU V
JIANG B
KUAH SH
LEE JC
CHU P
JONES RE
ZURCHER P
TAYLOR DJ
GILLESPIE S
Citation: Ts. Chen et al., STABILITY OF REACTIVE DC-SPUTTERED IR AND IRO2 THIN-FILMS IN VARIOUS AMBIENTS, Integrated ferroelectrics, 16(1-4), 1997, pp. 191-198
Authors:
JIANG B
LEE JC
ZURCHER P
JONES RE
Citation: B. Jiang et al., MODELING FERROELECTRIC CAPACITOR SWITCHING USING A PARALLEL-ELEMENTS MODEL, Integrated ferroelectrics, 16(1-4), 1997, pp. 199-208
Authors:
OHFUJI SI
ITSUMI M
AKIYA H
Citation: Si. Ohfuji et al., DIELECTRIC-PROPERTIES OF UNANNEALED ECR-SPUTTERED (BA,SR)TIO3 FILMS UNDER DC-BIAS STRESSES, Integrated ferroelectrics, 16(1-4), 1997, pp. 209-217
Authors:
HADNAGY TD
TRAYNOR SD
DALTON DI
Citation: Td. Hadnagy et al., THE USE OF VOLTAGE TO ACCELERATE THE ENDURANCE DEGRADATION OF PZT CAPACITORS, Integrated ferroelectrics, 16(1-4), 1997, pp. 219-227
Authors:
ARLT G
Citation: G. Arlt, A MODEL FOR SWITCHING AND HYSTERESIS IN FERROELECTRIC CERAMICS, Integrated ferroelectrics, 16(1-4), 1997, pp. 229-236
Authors:
TAGANTSEV AK
Citation: Ak. Tagantsev, SIZE EFFECTS IN POLARIZATION SWITCHING IN FERROELECTRIC THIN-FILMS, Integrated ferroelectrics, 16(1-4), 1997, pp. 237-244
Authors:
BUSSMANNHOLDER A
Citation: A. Bussmannholder, COMPETING TIME SCALES AT THE FERROELECTRIC PHASE-TRANSITION, Integrated ferroelectrics, 16(1-4), 1997, pp. 245-253
Authors:
KULVER R
GUENTHER RA
Citation: R. Kulver et Ra. Guenther, HIGH DIELECTRIC PERMITTIVITY IONIC MATERIALS FOR DRAMS DESIGNED BY COMPUTER-SIMULATION, Integrated ferroelectrics, 16(1-4), 1997, pp. 255-261