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Results: 201-225/339
Authors:
KAIBLINGERGRUJIN G
KOSINA H
Citation: G. Kaiblingergrujin et H. Kosina, AN IMPROVED IONIZED IMPURITY SCATTERING MODEL FOR MONTE-CARLO CALCULATIONS, VLSI design (Print), 6(1-4), 1998, pp. 209-212
Authors:
RASHED M
SHIH WK
JALLEPALLI S
ZAMAN R
KWAN TJT
MAZIAR CM
Citation: M. Rashed et al., A MONTE-CARLO STUDY OF ELECTRON-TRANSPORT IN STRAINED SI SIGE HETEROSTRUCTURES/, VLSI design (Print), 6(1-4), 1998, pp. 213-216
Authors:
CHENG MC
Citation: Mc. Cheng, A NEW CONCEPT FOR SOLVING THE BOLTZMANN TRANSPORT-EQUATION IN ULTRA-FAST TRANSIENT SITUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 217-222
Authors:
BACCARANI G
RUDAN M
LORENZINI M
SALA C
Citation: G. Baccarani et al., RECENT ADVANCES IN DEVICE SIMULATION USING STANDARD TRANSPORT MODELS, VLSI design (Print), 6(1-4), 1998, pp. 223-237
Authors:
VECCHI MC
MOHRING J
RUDAN M
Citation: Mc. Vecchi et al., AN EFFICIENT SOLUTION SCHEME FOR THE SPHERICAL-HARMONICS EXPANSION OFTHE BOLTZMANN TRANSPORT-EQUATION APPLIED TO 2-DIMENSIONAL DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 239-242
Authors:
AROKIANATHAN CR
ASENOV A
DAVIES JH
Citation: Cr. Arokianathan et al., A NEW APPROACH BASED ON BROWNIAN-MOTION FOR THE SIMULATION OF ULTRA-SMALL SEMICONDUCTOR-DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 243-246
Authors:
MUSCATO O
PIDATELLA RM
FISCHETTI MV
Citation: O. Muscato et al., MONTE-CARLO AND HYDRODYNAMIC SIMULATION OF A ONE-DIMENSIONAL N(-N-N(+) SILICON DIODE()), VLSI design (Print), 6(1-4), 1998, pp. 247-250
Authors:
LIANG WC
GOLDSMAN N
MAYERGOYZ I
Citation: Wc. Liang et al., A NEW SELF-CONSISTENT 2D DEVICE SIMULATOR BASED ON DETERMINISTIC SOLUTION OF THE BOLTZMANN, POISSON AND HOLE-CONTINUITY EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 251-256
Authors:
SINGH SP
GOLDSMAN N
MAYERGOYZ ID
Citation: Sp. Singh et al., SELF-CONSISTENT SOLUTION OF THE MULTI BAND BOLTZMANN, POISSON AND HOLE-CONTINUITY EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 257-260
Authors:
KERR DC
GOLDSMAN N
MAYERGOYZ ID
Citation: Dc. Kerr et al., 3-DIMENSIONAL HYDRODYNAMIC MODELING OF MOSFET DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 261-265
Authors:
KERR DC
MAYERGOYZ ID
Citation: Dc. Kerr et Id. Mayergoyz, 3-D DEVICE SIMULATION USING INTELLIGENT SOLUTION METHOD, VLSI design (Print), 6(1-4), 1998, pp. 267-272
Authors:
PENNATHUR S
SANDALCI CK
KOC CK
GOODNICK SM
Citation: S. Pennathur et al., 3D PARALLEL MONTE-CARLO SIMULATION OF GAAS-MESFETS, VLSI design (Print), 6(1-4), 1998, pp. 273-276
Authors:
CHEN GQ
JEROME JW
SHU CW
Citation: Gq. Chen et al., ANALYSIS AND SIMULATION OF EXTENDED HYDRODYNAMIC MODELS - THE MULTI-VALLEY GUNN OSCILLATOR AND MESFET SYMMETRIES, VLSI design (Print), 6(1-4), 1998, pp. 277-282
Authors:
COLALONGO L
VALDINOCI M
GNUDI A
RUDAN M
Citation: L. Colalongo et al., TRANSIENT ANALYSIS OF SILICON DEVICES USING THE HYDRODYNAMIC MODEL, VLSI design (Print), 6(1-4), 1998, pp. 283-286
Authors:
ROLDAN JB
GAMIZ F
LOPEZVILLANUEVA JA
CARCELLER JE
Citation: Jb. Roldan et al., MONTE-CARLO SIMULATION OF A SUBMICRON MOSFET INCLUDING INVERSION LAYER QUANTIZATION, VLSI design (Print), 6(1-4), 1998, pp. 287-290
Authors:
MEGLIO D
CIANCI C
DICARLO A
LUGLI P
Citation: D. Meglio et al., NON LOCAL-IMPACT IONIZATION EFFECTS IN SEMICONDUCTOR-DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 291-297
Authors:
KAN EC
JIN GY
YU ZP
DUTTON RW
Citation: Ec. Kan et al., OBSERVATION OF ANOMALOUS NEGATIVE DIFFERENTIAL RESISTANCE IN DIODE BREAKDOWN SIMULATION USING CARRIER TEMPERATURE-DEPENDENT IMPACT IONIZATION, VLSI design (Print), 6(1-4), 1998, pp. 299-302
Authors:
YODER PD
KRUMBEIN U
GARTNER K
SASAKI N
FICHTNER W
Citation: Pd. Yoder et al., STATISTICAL ENHANCEMENT OF TERMINAL CURRENT ESTIMATION FOR MONTE-CARLO DEVICE SIMULATION, VLSI design (Print), 6(1-4), 1998, pp. 303-306
Authors:
JAKUMEIT J
RAVAIOLI U
HESS K
Citation: J. Jakumeit et al., NEW APPROACH TO HOT-ELECTRON EFFECTS IN SI-MOSFETS BASED ON AN EVOLUTIONARY ALGORITHM USING A MONTE-CARLO LIKE MUTATION OPERATOR, VLSI design (Print), 6(1-4), 1998, pp. 307-311
Authors:
ARNOLD A
Citation: A. Arnold, NUMERICALLY ABSORBING BOUNDARY-CONDITIONS FOR QUANTUM EVOLUTION-EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 313-319
Authors:
SCHOLL E
Citation: E. Scholl, MODELING NONLINEAR AND CHAOTIC DYNAMICS IN SEMICONDUCTOR-DEVICE STRUCTURES, VLSI design (Print), 6(1-4), 1998, pp. 321-329
Authors:
FERRY DK
EDWARDS G
Citation: Dk. Ferry et G. Edwards, STUDIES OF CHAOTIC TRANSPORT OF ELECTRONS IN QUANTUM BOXES, VLSI design (Print), 6(1-4), 1998, pp. 331-334
Authors:
CHEN MH
POROD W
Citation: Mh. Chen et W. Porod, SIMULATION OF QUANTUM-DOT STRUCTURES IN SI SIO2/, VLSI design (Print), 6(1-4), 1998, pp. 335-339
Authors:
LIKHAREV KK
KOROTKOV AN
Citation: Kk. Likharev et An. Korotkov, ANALYSIS OF Q(0)-INDEPENDENT SINGLE-ELECTRON SYSTEMS, VLSI design (Print), 6(1-4), 1998, pp. 341-344
Authors:
MACUCCI M
HESS K
Citation: M. Macucci et K. Hess, CORRECTIONS TO THE CAPACITANCE BETWEEN 2 ELECTRODES DUE TO THE PRESENCE OF QUANTUM-CONFINED SYSTEM, VLSI design (Print), 6(1-4), 1998, pp. 345-349