AAAAAA
Results:
1-18
|
Results: 18
Authors:
MACHIDA K
KYURAGI H
AKIYA H
IMAI K
TOUNAI A
NAKASHIMA A
Citation: K. Machida et al., NOVEL GLOBAL PLANARIZATION TECHNOLOGY FOR INTERLAYER DIELECTRICS USING SPIN ON GLASS-FILM TRANSFER AND HOT-PRESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1093-1097
Authors:
ITSUMI M
AKIYA H
TOMITA M
UEKI T
YAMAWAKI M
Citation: M. Itsumi et al., ORIGIN OF THIN-OXIDE DEFECTS AFFECTING YIELD AND RELIABILITY OF FLOATING-GATE DEVICES AND FLASH MEMORIES, Solid-state electronics, 42(1), 1998, pp. 107-113
Authors:
OHFUJI S
ITSUMI M
AKIYA H
Citation: S. Ohfuji et al., DIELECTRIC-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE-SPUTTERED (BA, SR)TIO3 FILMS, JPN J A P 1, 36(9B), 1997, pp. 5854-5859
Authors:
OHFUJI SI
ITSUMI M
AKIYA H
Citation: Si. Ohfuji et al., DIELECTRIC-PROPERTIES OF UNANNEALED ECR-SPUTTERED (BA,SR)TIO3 FILMS UNDER DC-BIAS STRESSES, Integrated ferroelectrics, 16(1-4), 1997, pp. 209-217
Authors:
ITSUMI M
AKIYA H
TOMITA M
UEKI T
YAMAWAKI M
Citation: M. Itsumi et al., OBSERVATION OF DEFECTS IN THERMAL OXIDES OF POLYSILICON BY TRANSMISSION ELECTRON-MICROSCOPY USING COPPER DECORATION, Journal of the Electrochemical Society, 144(2), 1997, pp. 600-605
Authors:
ITSUMI M
OHFUJI S
TSUKADA M
AKIYA H
Citation: M. Itsumi et al., ON-CHIP DECOUPLING CAPACITANCE WITH HIGH DIELECTRIC-CONSTANT AND STRENGTH USING SRTIO3 THIN-FILMS ELECTRON-CYCLOTRON-RESONANCE-SPUTTERED AT400-DEGREES-C, Journal of the Electrochemical Society, 144(12), 1997, pp. 4321-4325
Authors:
HIRATA A
HOSOYA T
MACHIDA K
KYURAGI H
AKIYA H
Citation: A. Hirata et al., ELECTRICAL CHARACTERISTICS OF A WSIX CONTACT ELECTRODE WITH A WSIXN DIFFUSION BARRIER FORMED BY USING ELECTRON-CYCLOTRON-RESONANCE PLASMA NITRIDATION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3993-3998
Authors:
ITSUMI M
OHFUJI S
AKIYA H
Citation: M. Itsumi et al., ELECTRON-CYCLOTRON-RESONANCE SPUTTERED SRTIO3 THIN-FILMS, JPN J A P 1, 35(9B), 1996, pp. 4963-4966
Authors:
ITSUMI M
AKIYA H
UEKI T
TOMITA M
YAMAWAKI M
Citation: M. Itsumi et al., OCTAHEDRAL-STRUCTURED GIGANTIC PRECIPITATES AS THE ORIGIN OF GATE-OXIDE DEFECTS IN METAL-OXIDE-SEMICONDUCTOR LARGE-SCALE-INTEGRATED CIRCUITS, JPN J A P 1, 35(2B), 1996, pp. 812-817
Authors:
ITSUMI M
AKIYA H
TOMITA M
UEKI T
YAMAWAKI M
Citation: M. Itsumi et al., IMPURITY DEPENDENCE OF OXIDE DEFECTS IN CZOCHRALSKI SILICON, Journal of applied physics, 80(12), 1996, pp. 6661-6665
Authors:
ITSUMI M
OMURA Y
IMAI K
UEKI T
AKIYA H
TOMITA M
YAMAWAKI M
Citation: M. Itsumi et al., COPPER DECORATION FOLLOWED BY TEM OBSERVATION DEFECTS IN THE BURIED OXIDES OF SOI SUBSTRATES, Journal of the Electrochemical Society, 143(7), 1996, pp. 2357-2361
Authors:
AKIYA H
ITSUMI M
Citation: H. Akiya et M. Itsumi, BARRIER HEIGHT LOWERING AND INSTABILITY OF GATE OXIDES DUE TO DILUTE HYDROFLUORIC-ACID PRETREATMENT, Journal of the Electrochemical Society, 143(3), 1996, pp. 973-976
Authors:
HIRATA A
HOSOYA T
MACHIDA K
TAKAOKA H
AKIYA H
Citation: A. Hirata et al., A WSIXN DIFFUSION BARRIER FORMED WITH ELECTRON-CYCLOTRON-RESONANCE NITROGEN PLASMA, Journal of the Electrochemical Society, 143(11), 1996, pp. 3747-3751
Authors:
ITSUMI M
SHIMAYA M
AKIYA H
SHIONO N
Citation: M. Itsumi et al., GENERATION OF SI-SIO2 INTERFACE STATES AT SURFACE-POTENTIALS NEAR 0.4AND 0.7 EV, Journal of the Electrochemical Society, 143(11), 1996, pp. 3757-3762
Authors:
ITSUMI M
AKIYA H
NAKAYAMA S
YOSHINO H
Citation: M. Itsumi et al., PASSIVATION OF SODIUM-IONS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES BYANNEALING WITH ULTRAVIOLET-LIGHT, Journal of the Electrochemical Society, 143(10), 1996, pp. 3359-3365
Authors:
ITSUMI M
AKIYA H
NAKAYAMA S
YOSHINO H
Citation: M. Itsumi et al., SPECTRUM ANALYSIS AND VECTOR REPRESENTATION OF SRAM BIT FAILURES, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 365-370
Authors:
ITSUMI M
AKIYA H
UEKI T
TOMITA M
YAMAWAKI M
Citation: M. Itsumi et al., THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON, Journal of applied physics, 78(10), 1995, pp. 5984-5988
Authors:
AKIYA H
KUWANO S
MATSUMOTO T
MURAOKA H
ITSUMI M
YABUMOTO N
Citation: H. Akiya et al., THIN-OXIDE DIELECTRIC STRENGTH IMPROVEMENT BY ADDING A PHOSPHONIC ACID CHELATING AGENT INTO NH4OH-H2O2 SOLUTION, Journal of the Electrochemical Society, 141(10), 1994, pp. 120000139-120000142
Risultati:
1-18
|