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Results: 1-25 | 26-28
Results: 1-25/28
DEEP STATES IN SILICON DELTA-DOPED GAAS
Authors: ALESHKIN VY DANILTSEV VM MUREL AV KHRYKIN OI SHASHKIN VI
Citation: Vy. Aleshkin et al., DEEP STATES IN SILICON DELTA-DOPED GAAS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 659-664
SHALLOW ACCEPTORS IN STRAINED MULTI-QUANTUM-WELL GE GE1-XSIX HETEROSTRUCTURES/
Authors: ALESHKIN VY GAVRILENKO VI EROFEEVA IV KOZLOV DV MOLDAVSKAYA MD KUZNETSOV OA
Citation: Vy. Aleshkin et al., SHALLOW ACCEPTORS IN STRAINED MULTI-QUANTUM-WELL GE GE1-XSIX HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1106-1110
POLARIZATION OF INPLANE PHOTOLUMINESCENCE FROM INAS GA(IN)AS QUANTUM-WELL LAYERS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY/
Authors: ALESHKIN VY ZVONKOV BN MALKINA IG SAFYANOV YN CHERNOV AL FILATOV DO
Citation: Vy. Aleshkin et al., POLARIZATION OF INPLANE PHOTOLUMINESCENCE FROM INAS GA(IN)AS QUANTUM-WELL LAYERS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1119-1124
CHARACTERIZATION OF GAAS INXGA1-XAS QUANTUM-DOT HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL METHODS/
Authors: ALESHKIN VY GAPONOVA DM GUSEV SA DANILTSEV VM KRASILNIK ZF MUREL AV PARAMONOV LV REVIN DG KHRYKIN OI SHASHKIN VI
Citation: Vy. Aleshkin et al., CHARACTERIZATION OF GAAS INXGA1-XAS QUANTUM-DOT HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL METHODS/, Semiconductors, 32(1), 1998, pp. 99-104
FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MALKINA IG REVIN DG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica. B, Condensed matter, 251, 1998, pp. 971-975
OPTICAL DIAGNOSTICS OF QUANTUM DOTS IN GAAS INXGA1-XAS HETEROSTRUCTURES/
Authors: ALESHKIN VY GUSEV SA DANILTSEV VM DROZDOV MN KHRYKIN OI KRASILNIK ZF REVIN DG SHASHKIN VI
Citation: Vy. Aleshkin et al., OPTICAL DIAGNOSTICS OF QUANTUM DOTS IN GAAS INXGA1-XAS HETEROSTRUCTURES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 143-148
GIANT POPULATION-INVERSION OF HOT-ELECTRONS IN GAAS ALAS TYPE HETEROSTRUCTURES WITH QUANTUM-WELLS/
Authors: ALESHKIN VY ANDRONOV AA
Citation: Vy. Aleshkin et Aa. Andronov, GIANT POPULATION-INVERSION OF HOT-ELECTRONS IN GAAS ALAS TYPE HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 68(1), 1998, pp. 78-83
GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/
Authors: ALESHKIN VY AKHLESTINA SA ZVONKOV BN ZVONKOV NB MALKINA IG USKOVA EA
Citation: Vy. Aleshkin et al., GAASSB GAAS QUANTUM-WELL GROWTH BY MOCVD HYDRIDE EPITAXY WITH LASER SPUTTERING OF ANTIMONY/, JETP letters, 68(1), 1998, pp. 91-96
SELF-ORGANIZATION OF GERMANIUM NANOISLANDS OBTAINED IN SILICON BY MOLECULAR-BEAM EPITAXY
Authors: ALESHKIN VY BEKIN NA KALUGIN NG KRASILNIK ZF NOVIKOV AV POSTNIKOV VV SEYRINGER H
Citation: Vy. Aleshkin et al., SELF-ORGANIZATION OF GERMANIUM NANOISLANDS OBTAINED IN SILICON BY MOLECULAR-BEAM EPITAXY, JETP letters, 67(1), 1998, pp. 48-53
PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/
Authors: ZVONKOV BN MALKINA IG LINKOVA ER ALESHKIN VY KARPOVICH IA FILATOV DO
Citation: Bn. Zvonkov et al., PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/, Semiconductors, 31(9), 1997, pp. 941-946
ELECTRON AND HOLE SPECTRA AND SELECTION-RULES FOR OPTICAL-TRANSITIONSIN GE1-XSIX GE HETEROSTRUCTURES/
Authors: ALESHKIN VY BEKIN NA
Citation: Vy. Aleshkin et Na. Bekin, ELECTRON AND HOLE SPECTRA AND SELECTION-RULES FOR OPTICAL-TRANSITIONSIN GE1-XSIX GE HETEROSTRUCTURES/, Semiconductors, 31(2), 1997, pp. 132-138
THE CONDUCTION-BAND AND SELECTION-RULES FOR INTERBAND OPTICAL-TRANSITIONS IN STRAINED GE1-XSIX GE AND GE1-XSIX/SI HETEROSTRUCTURES/
Authors: ALESHKIN VY BEKIN NA
Citation: Vy. Aleshkin et Na. Bekin, THE CONDUCTION-BAND AND SELECTION-RULES FOR INTERBAND OPTICAL-TRANSITIONS IN STRAINED GE1-XSIX GE AND GE1-XSIX/SI HETEROSTRUCTURES/, Journal of physics. Condensed matter, 9(23), 1997, pp. 4841-4852
ELECTROOPTICAL PHENOMENA ACCOMPANYING ELECTRON AND HOLE HEATING IN SUPERLATTICES AND QUANTUM-WELLS GAAS ALGAAS AND GE/GESI/
Authors: VOROBJEV LE DANILOV SN ZIBIK EA FIRSOV DA SHALYGIN VA SHIK AY SAIDASHEV II ALESHKIN VY KUZNETSOV OA ORLOV LK
Citation: Le. Vorobjev et al., ELECTROOPTICAL PHENOMENA ACCOMPANYING ELECTRON AND HOLE HEATING IN SUPERLATTICES AND QUANTUM-WELLS GAAS ALGAAS AND GE/GESI/, Superlattices and microstructures, 22(4), 1997, pp. 467-473
IR RADIATION FROM HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDERREAL-SPACE TRANSFER/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI REVIN DG MALKINA IG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., IR RADIATION FROM HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDERREAL-SPACE TRANSFER/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 178-180
PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/
Authors: REVIN DG ALESHKIN VY ANDRONOV AA GAPONOVA DM GAVRILENKO VI MALKINA IG USKOVA EA ZVONKOV BN
Citation: Dg. Revin et al., PHOTOLUMINESCENCE FROM INGAAS GAAS MQW HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 184-186
FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MURAVEV AV PAVLOV SG REVIN DG SHASTIN VN MALKINA IG USKOVA EA ZVONKOV BN
Citation: Vy. Aleshkin et al., FAR-INFRARED EMISSION AND ABSORPTION (AMPLIFICATION) UNDER REAL-SPACETRANSFER AND POPULATION-INVERSION IN SHALLOW MULTI-QUANTUM-WELLS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 563-565
INAS MONOLAYERS IN INP AND THEIR PHOTOLUMINESCENCE POLARIZATION
Authors: MALKINA IG ALESHKIN VY ZVONKOV BN SAFRANOV YN
Citation: Ig. Malkina et al., INAS MONOLAYERS IN INP AND THEIR PHOTOLUMINESCENCE POLARIZATION, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 61-67
ADMITTANCE OF A PLANAR DISTRIBUTION OF DEEP LEVELS
Authors: ALESHKIN VY
Citation: Vy. Aleshkin, ADMITTANCE OF A PLANAR DISTRIBUTION OF DEEP LEVELS, Semiconductors, 30(12), 1996, pp. 1148-1150
SPONTANEOUS EMISSION OF FAR-INFRARED RADIATION BY HOT HOLES IN GERMANIUM AND GE GE1-XSIX QUANTUM-WELLS/
Authors: ALESHKIN VY VOROBEV LE DONETSKII DV KUZNETSOV OA ORLOV LK
Citation: Vy. Aleshkin et al., SPONTANEOUS EMISSION OF FAR-INFRARED RADIATION BY HOT HOLES IN GERMANIUM AND GE GE1-XSIX QUANTUM-WELLS/, Semiconductors, 30(11), 1996, pp. 1031-1036
EXCITON LUMINESCENCE IN GE-GE1-XSIX MULTIPLE-QUANTUM-WELL STRUCTURES
Authors: ORLOV LK ALESHKIN VY KALUGIN NG BEKIN NA KUZNETSOV OA DIETRICH B BACQUET G LEOTIN J BROUSSEAU M HASSEN F
Citation: Lk. Orlov et al., EXCITON LUMINESCENCE IN GE-GE1-XSIX MULTIPLE-QUANTUM-WELL STRUCTURES, Journal of applied physics, 80(1), 1996, pp. 415-422
INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/
Authors: ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI REVIN DG ZVONKOV BN LINKOVA ER MALKINA IG USKOVA EA
Citation: Vy. Aleshkin et al., INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 64(7), 1996, pp. 520-524
SUPERLUMINESCENCE POLARIZATION AND OPTICAL-LOSS ANISOTROPY IN AN INGAP GAAS/LNGAP WAVE-GUIDE STRUCTURE/
Authors: ALESHKIN VY REVIN DG AKHLESTINA SA ZVONKOV BN ZVONKOV NB LINKOVA ER MALKINA IG SAFYANOV YN
Citation: Vy. Aleshkin et al., SUPERLUMINESCENCE POLARIZATION AND OPTICAL-LOSS ANISOTROPY IN AN INGAP GAAS/LNGAP WAVE-GUIDE STRUCTURE/, Semiconductors, 29(4), 1995, pp. 307-311
STRONG POLARIZATION OF THE PHOTOLUMINESCENCE OF INXGA1-XP GROWN ON (110)GAAS
Authors: ALESHKIN VY ZVONKOV BN LINKOVA ER MALKINA IG SAFYANOV YN
Citation: Vy. Aleshkin et al., STRONG POLARIZATION OF THE PHOTOLUMINESCENCE OF INXGA1-XP GROWN ON (110)GAAS, JETP letters, 62(4), 1995, pp. 346-349
HOLE TUNNELING THROUGH HETEROBARRIER
Authors: ALESHKIN VY BEKIN NA
Citation: Vy. Aleshkin et Na. Bekin, HOLE TUNNELING THROUGH HETEROBARRIER, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 105(5), 1994, pp. 1396-1410
POLARIZATION DEPENDENCE OF THE INTERBAND OPTICAL-ABSORPTION BY AN INGAAS QUANTUM-WELL IN GAAS
Authors: ALESHKIN VY ANSHON AV KARPOVICH IA
Citation: Vy. Aleshkin et al., POLARIZATION DEPENDENCE OF THE INTERBAND OPTICAL-ABSORPTION BY AN INGAAS QUANTUM-WELL IN GAAS, Semiconductors, 27(8), 1993, pp. 742-744
Risultati: 1-25 | 26-28