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Results: 1-25/68
Authors:
ROSSOW U
LINDNER K
LUBBE M
ASPNES DE
ZAHN DRT
Citation: U. Rossow et al., REFLECTANCE DIFFERENCE SPECTROSCOPY SPECTRA OF CLEAN (3X2), (2X1), AND C(2X2) 3C-SIC(001) SURFACES - NEW EVIDENCE FOR SURFACE-STATE CONTRIBUTIONS TO OPTICAL ANISOTROPY SPECTRA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2355-2357
Authors:
ASPNES DE
MANTESE L
BELL KA
ROSSOW U
Citation: De. Aspnes et al., PHOTON-INDUCED LOCALIZATION AND FINAL-STATE CORRELATION-EFFECTS IN OPTICALLY ABSORBING MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2367-2372
Authors:
LENG J
OPSAL J
CHU H
SENKO M
ASPNES DE
Citation: J. Leng et al., ANALYTIC REPRESENTATIONS OF THE DIELECTRIC FUNCTIONS OF CRYSTALLINE AND AMORPHOUS SI AND CRYSTALLINE GE FOR VERY LARGE-SCALE INTEGRATED DEVICE AND STRUCTURAL MODELING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1654-1657
Authors:
ASPNES DE
DIETZ N
Citation: De. Aspnes et N. Dietz, OPTICAL APPROACHES FOR CONTROLLING EPITAXIAL-GROWTH, Applied surface science, 132, 1998, pp. 367-376
Authors:
ROSSOW U
MANTESE L
ASPNES DE
Citation: U. Rossow et al., LINESHAPES OF SURFACE-INDUCED OPTICAL ANISOTROPY SPECTRA MEASURED BY RDS RAS/, Applied surface science, 123, 1998, pp. 237-242
Authors:
WOO DH
HAN IK
CHOI WJ
LEE S
KIM HJ
LEE JI
KIM SH
KANG KN
CHOI SG
KIM YD
YOO SD
ASPNES DE
RHEE SJ
WOO JC
Citation: Dh. Woo et al., OPTICAL CHARACTERIZATION OF GAAS ALAS SHORT-PERIOD SUPERLATTICES/, Microelectronic engineering, 43-4, 1998, pp. 265-270
Authors:
COLLINS RW
ASPNES DE
IRENE EA
Citation: Rw. Collins et al., SPECTROSCOPIC ELLIPSOMETRY - PROCEEDINGS OF THE 2ND INTERNATIONAL-CONFERENCE ON SPECTROSCOPIC ELLIPSOMETRY - CHARLESTON, SOUTH-CAROLINA, USA 12-15 MAY 1997 - PREFACE, Thin solid films, 313, 1998, pp. 11-12
Authors:
OPSAL J
FANTON J
CHEN J
LENG J
WEI L
UHRICH C
SENKO M
ZAISER C
ASPNES DE
Citation: J. Opsal et al., BROAD-BAND SPECTRAL OPERATION OF A ROTATING-COMPENSATOR ELLIPSOMETER, Thin solid films, 313, 1998, pp. 58-61
Authors:
LENG J
OPSAL J
CHU H
SENKO M
ASPNES DE
Citation: J. Leng et al., ANALYTIC REPRESENTATIONS OF THE DIELECTRIC FUNCTIONS OF MATERIALS FORDEVICE AND STRUCTURAL MODELING, Thin solid films, 313, 1998, pp. 132-136
Authors:
YOO SD
EDWARDS NV
ASPNES DE
Citation: Sd. Yoo et al., ANALYSIS OF OPTICAL-SPECTRA BY FOURIER METHODS, Thin solid films, 313, 1998, pp. 143-148
Authors:
BELL KA
MANTESE L
ROSSOW U
ASPNES DE
Citation: Ka. Bell et al., SYSTEMATIC DIFFERENCES AMONG NOMINAL REFERENCE DIELECTRIC FUNCTION SPECTRA FOR CRYSTALLINE SI AS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 161-166
Authors:
EDWARDS NV
YOO SD
BREMSER MD
HORTON MN
PERKINS NR
WEEKS TW
LIU H
STALL RA
KUECH TF
DAVIS RF
ASPNES DE
Citation: Nv. Edwards et al., SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS, Thin solid films, 313, 1998, pp. 187-192
Authors:
MANTESE L
BELL KA
ROSSOW U
ASPNES DE
Citation: L. Mantese et al., INTERPRETATION OF CRITICAL-POINT ENERGY SHIFTS IN CRYSTALLINE SI BY NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES, Thin solid films, 313, 1998, pp. 557-560
Authors:
EDWARDS NV
BREMSER MD
DAVIS RF
BATCHELOR AD
YOO SD
KARAN CF
ASPNES DE
Citation: Nv. Edwards et al., TRENDS IN RESIDUAL-STRESS FOR GAN ALN/6H-SIC HETEROSTRUCTURES/, Applied physics letters, 73(19), 1998, pp. 2808-2810
Authors:
ASPNES DE
ROWE JE
Citation: De. Aspnes et Je. Rowe, MICROELECTRONICS AND NANOMETER STRUCTURES - PROCESSING, MEASUREMENT AND PHENOMENA - PAPERS FROM THE 24TH ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1018-1018
Authors:
MANTESE L
BELL KA
ROSSOW U
ASPNES DE
Citation: L. Mantese et al., EVIDENCE OF NEAR-SURFACE LOCALIZATION OF EXCITED ELECTRONIC STATES INCRYSTALLINE SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1196-1200
Authors:
BELL KA
MANTESE L
ROSSOW U
ASPNES DE
Citation: Ka. Bell et al., SURFACE AND INTERFACE EFFECTS ON ELLIPSOMETRIC SPECTRA OF CRYSTALLINESI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1205-1211
Authors:
BREMSER MD
PERRY WG
ZHELEVA T
EDWARDS NV
NAM OH
PARIKH N
ASPNES DE
DAVIS RF
Citation: Md. Bremser et al., GROWTH, DOPING AND CHARACTERIZATION OF ALXGA1-XN THIN-FILM ALLOYS ON 6H-SIC(0001) SUBSTRATES, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 196-201
Authors:
EDWARDS NV
YOO SD
BREMSER MD
ZHELEVA T
HORTON MN
PERKINS NR
WEEKS TW
LIU H
STALL RA
KUECH TF
DAVIS RF
ASPNES DE
Citation: Nv. Edwards et al., SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 134-141
Authors:
KIM YD
KO YD
CHOI SG
YOO SD
ASPNES DE
JONKER BT
Citation: Yd. Kim et al., ABOVE BANDGAP DIELECTRIC FUNCTION OF EPITAXIAL ZNSE LAYERS, Journal of the Korean Physical Society, 31(4), 1997, pp. 553-555
Authors:
CHOI SG
KIM YD
KLEIN MV
YOO SD
ASPNES DE
XIN SH
FURDYNA JK
Citation: Sg. Choi et al., SPECTROSCOPIC ELLIPSOMETRIC STUDY OF ZN1-XMNXTE FILMS GROWN ON GAAS, Journal of the Korean Physical Society, 31(1), 1997, pp. 202-205
Authors:
CHOI SG
KIM YD
YOO SD
ASPNES DE
RHEE SJ
WOO JC
WOO DH
KIM SH
KANG KN
Citation: Sg. Choi et al., SPECTROSCOPIC ELLIPSOMETRY STUDY OF GAAS ALAS SUPERLATTICES AND AL0.5GA0.5AS ALLOY/, Journal of the Korean Physical Society, 30, 1997, pp. 108-112
Authors:
BACHMANN KJ
HOPFNER C
SUKIDI N
MILLER AE
HARRIS C
ASPNES DE
DIETZ NA
TRAN HT
BEELER S
ITO K
BANKS HT
ROSSOW U
Citation: Kj. Bachmann et al., MOLECULAR LAYER EPITAXY BY REAL-TIME OPTICAL PROCESS MONITORING, Applied surface science, 112, 1997, pp. 38-47
Authors:
ASPNES DE
Citation: De. Aspnes, REAL-TIME OPTICAL ANALYSIS AND CONTROL OF SEMICONDUCTOR EPITAXY - PROGRESS AND OPPORTUNITY, Solid state communications, 101(2), 1997, pp. 85-92
Authors:
CHOI SG
KIM YD
YOO SD
ASPNES DE
MIOTKOWSKI I
RAMDAS AK
Citation: Sg. Choi et al., ELLIPSOMETRIC STUDIES OF CD1-XMGXTE LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5) ALLOYS, Applied physics letters, 71(2), 1997, pp. 249-251