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Results: 1-25/30
Authors:
Hoke, WE
Lemonias, PJ
Kennedy, TD
Torabi, A
Tong, EK
Bourque, RJ
Jang, JH
Cueva, G
Dumka, DC
Adesida, I
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1505-1509
Authors:
Jang, JH
Cueva, G
Dumka, DC
Hoke, WE
Lemonias, PJ
Adesida, I
Citation: Jh. Jang et al., Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates, IEEE PHOTON, 13(2), 2001, pp. 151-153
Authors:
Jang, JH
Cueva, G
Dumka, DC
Hoke, WE
Lemonias, PJ
Fay, P
Adesida, I
Citation: Jh. Jang et al., The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes, IEEE PHOTON, 13(10), 2001, pp. 1097-1099
Authors:
Dumka, DC
Hoke, WE
Lemonias, PJ
Cueva, G
Adesida, I
Citation: Dc. Dumka et al., High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates, IEEE ELEC D, 22(8), 2001, pp. 364-366
Authors:
Dumka, DC
Cueva, G
Hier, H
Aina, OA
Adesida, I
Citation: Dc. Dumka et al., DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths, IEEE ELEC D, 22(1), 2001, pp. 5-7
Authors:
Adesida, I
Redwing, J
Rea, L
Zetterling, CM
Citation: I. Adesida et al., Special issue on III-V nitrides and silicon carbide - Foreword, J ELEC MAT, 30(3), 2001, pp. 109-109
Authors:
Khan, FA
Roof, B
Zhou, L
Adesida, I
Citation: Fa. Khan et al., Etching of silicon carbide for device fabrication and through via-hole formation, J ELEC MAT, 30(3), 2001, pp. 212-219
Authors:
Lu, W
Yang, JW
Khan, MA
Adesida, I
Citation: W. Lu et al., AlGaN/GaN HEMTs on SiC with over 100 GHz f(T) and low microwave noise, IEEE DEVICE, 48(3), 2001, pp. 581-585
Authors:
Kumar, V
Lu, W
Schwindt, R
Van Hove, J
Chow, P
Adesida, I
Citation: V. Kumar et al., 0.25 mu m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high f(T), ELECTR LETT, 37(13), 2001, pp. 858-859
Authors:
Jang, JH
Cueva, G
Dumka, DC
Hoke, WE
Lemonias, PJ
Fay, P
Adesida, I
Citation: Jh. Jang et al., Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates, ELECTR LETT, 37(11), 2001, pp. 707-708
Authors:
Zhou, L
Khan, F
Ping, AT
Osinski, A
Adesida, I
Citation: L. Zhou et al., Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, MRS I J N S, 5, 2000, pp. NIL_442-NIL_447
Authors:
Lu, W
Koester, SJ
Wang, XW
Chu, JO
Ma, TP
Adesida, I
Citation: W. Lu et al., Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J VAC SCI B, 18(6), 2000, pp. 3488-3492
Authors:
Adesida, I
Citation: I. Adesida, In memory of... Gregory Eugene Stillman, 1936-1999, J ELEC MAT, 29(5), 2000, pp. 473-474
Authors:
Adesida, I
Melloch, MR
Citation: I. Adesida et Mr. Melloch, Special issue on III-IV nitrides and silicon carbide - Foreword, J ELEC MAT, 29(3), 2000, pp. 251-251
Authors:
Lu, W
Kuliev, A
Koester, SJ
Wang, XW
Chu, JO
Ma, TP
Adesida, I
Citation: W. Lu et al., High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's, IEEE DEVICE, 47(8), 2000, pp. 1645-1652
Authors:
Ping, AT
Piner, E
Redwing, J
Khan, MA
Adesida, I
Citation: At. Ping et al., Microwave noise performance of AlGaN/GaN HEMTs, ELECTR LETT, 36(2), 2000, pp. 175-176
Authors:
Zhou, L
Ping, AT
Khan, F
Osinsky, A
Adesida, I
Citation: L. Zhou et al., Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, ELECTR LETT, 36(1), 2000, pp. 91-93
Authors:
Zhou, L
Lanford, W
Ping, AT
Adesida, I
Yang, JW
Khan, A
Citation: L. Zhou et al., Low resistance Ti/Pt/Au ohmic contacts to p-type GaN, APPL PHYS L, 76(23), 2000, pp. 3451-3453
Authors:
Khan, FA
Zhou, L
Ping, AT
Adesida, I
Citation: Fa. Khan et al., Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation, J VAC SCI B, 17(6), 1999, pp. 2750-2754
Authors:
Chen, Q
Yang, JW
Blasingame, M
Faber, C
Ping, AT
Adesida, I
Citation: Q. Chen et al., Microwave electronics device applications of AlGaN GaN heterostructures, MAT SCI E B, 59(1-3), 1999, pp. 395-400
Authors:
Lu, W
Wang, XW
Hammond, R
Kuliev, A
Koester, S
Chu, JO
Ismail, K
Ma, TP
Adesida, I
Citation: W. Lu et al., P-type SiGe transistors with low gate leakage using SiN gate dielectric, IEEE ELEC D, 20(10), 1999, pp. 514-516
Authors:
Tsang, HK
Mak, MWK
Chan, LY
Soole, JBD
Youtsey, C
Adesida, I
Citation: Hk. Tsang et al., Etched cavity InGaAsP/InP waveguide Fabry-Perot filter tunable by current injection, J LIGHTW T, 17(10), 1999, pp. 1890-1895
Authors:
Adesida, I
Capano, MA
Melloch, MR
Nakamura, S
Citation: I. Adesida et al., Special issue papers on III-V nitrides and silicon carbide - Foreword, J ELEC MAT, 28(3), 1999, pp. 135-135
Authors:
Adesida, I
Mahajan, A
Cueva, G
Fay, P
Citation: I. Adesida et al., Novel HEMT processing technologies and their circuit applications, SOL ST ELEC, 43(8), 1999, pp. 1333-1338
Authors:
Zhou, L
Ping, AT
Boutros, K
Redwing, J
Adesida, I
Citation: L. Zhou et al., Characterisation of rhenium Schottky contacts on n-type AlxGa1-xN, ELECTR LETT, 35(9), 1999, pp. 745-746